公开(公告)号：US20080031639A1

公开(公告)日：2008-02-07

申请号：US11499026

申请日：2006-08-03

申请人： Kurt Knodt ,  Soiba Mohammad ,  Yue Liu ,  Lifen Tian ,  Yao-Tian Wang ,  Yi Ding ,  Yuwen Wu

发明人： Kurt Knodt ,  Soiba Mohammad ,  Yue Liu ,  Lifen Tian ,  Yao-Tian Wang ,  Yi Ding ,  Yuwen Wu

IPC分类号： G03G15/00

CPC分类号： H04N1/32609 ,  H04N1/00209 ,  H04N1/00233 ,  H04N1/00477 ,  H04N1/32662 ,  H04N2201/0039 ,  H04N2201/0094 ,  H04N2201/0098

摘要： A method and apparatus for processing electronic documents is provided. A request, from a first user, to issue an alert to a second user that may have submitted a print request to the printing device is received at the printing device. The printing device may be attempting to process the print request submitted by the second user when the printing device receives the request from the first user. The first user may not know the identity of the second user. The printing device consults contact data that identifies how to contact the second user. The printing device thereafter issues the alert to the second user in accordance with the contact data. Upon receiving the alert, the second user is informed of the current condition of the printing device, e.g., the printing device may be experiencing a problem that prevents the second user's print request from being fully processed.

摘要翻译： 提供一种用于处理电子文档的方法和装置。 在打印装置处接收来自第一用户的向可能向打印设备提交打印请求的第二用户发出警报的请求。 当打印设备从第一用户接收到请求时，打印设备可能正尝试处理由第二用户提交的打印请求。 第一个用户可能不知道第二个用户的身份。 打印设备查询识别如何联系第二个用户的联系人数据。 此后，打印装置根据联系人数据向第二用户发出警报。 当接收到警报时，通知第二用户打印装置的当前状况，例如打印装置可能正在经历妨碍第二用户打印请求被完全处理的问题。

公开(公告)号：US20080013885A1

公开(公告)日：2008-01-17

申请号：US11781007

申请日：2007-07-20

申请人： Jun Su ,  Yi Ding

发明人： Jun Su ,  Yi Ding

IPC分类号： G02B6/28

CPC分类号： H04J14/0221

摘要： An automatic shutdown system for optical multiplexers and demultiplexers includes an optical switch that is disposed in a common optical channel between a transmitter and a receiver of an optical communication system. The optical switch may attenuate or block a signal in the common optical channel during power-off conditions. The optical switch may also provide a low insertion loss and low polarization loss in the common optical channel during power-on conditions.

摘要翻译： 用于光复用器和解复用器的自动关闭系统包括光开关，其设置在光通信系统的发射机和接收机之间的公共光信道中。 在断电条件下，光开关可能衰减或阻断公共光通道中的信号。 在开机状态下，光开关还可以在公共光通道中提供低插入损耗和低极化损耗。

公开(公告)号：US07214585B2

公开(公告)日：2007-05-08

申请号：US10440500

申请日：2003-05-16

申请人： Yi Ding

发明人： Yi Ding

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76802 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/11529

摘要： A widened contact area (170X) of a conductive feature (170) is formed by means of self-alignment between an edge (170E2) of the conductive feature and an edge (140E) of another feature (140). The other feature (“first feature”) is formed from a first layer, and the conductive feature is formed from a second layer overlying the first layer. The edge (170E2) of the conductive feature is shaped to provide a widened contact area. This shaping is achieved in a self-aligned manner by shaping the corresponding edge (140E) of the first feature.

摘要翻译： 通过在导电特征的边缘（170E2）与另一特征（140）的边缘（140E）之间的自对准，形成导电特征（170）的加宽的接触区域（170×）。 另一特征（“第一特征”）由第一层形成，并且导电特征由覆盖第一层的第二层形成。 导电特征的边缘（170E 2）成形为提供加宽的接触面积。 通过使第一特征的对应边缘（140E）成形，以自对准的方式实现该成形。

公开(公告)号：US07027677B2

公开(公告)日：2006-04-11

申请号：US10848924

申请日：2004-05-19

申请人： Ruolin Li ,  Ut Tran ,  Xuejun Ying ,  Jun Liu ,  Yi Ding ,  Hiroaki Fukuto

发明人： Ruolin Li ,  Ut Tran ,  Xuejun Ying ,  Jun Liu ,  Yi Ding ,  Hiroaki Fukuto

IPC分类号： G02B6/12

CPC分类号： G02B6/12004 ,  G02B2006/12109 ,  G02B2006/12119 ,  G02B2006/12147 ,  G02B2006/12152

摘要： Optical components may be integrated into planar light circuits. For example, thin film filters may be integrated through trenches in planar light circuits to achieve demultiplexing of at least two multiplexed optical wavelengths. An optical waveguide may be interfaced with a laser or a light detector through a mode converter formed as a trench in the planar light circuit. The mode converter may have a curved surface to achieve mode conversion.

摘要翻译： 光学元件可以集成到平面光电路中。 例如，薄膜滤光器可以通过平面光电路中的沟槽集成，以实现至少两个复用光波长的解复用。 光波导可以通过在平面光电路中形成为沟槽的模式转换器与激光器或光检测器接口。 模式转换器可以具有曲面以实现模式转换。

公开(公告)号：US07018895B2

公开(公告)日：2006-03-28

申请号：US11102066

申请日：2005-04-08

申请人： Yi Ding

发明人： Yi Ding

IPC分类号： H01L21/336

CPC分类号： H01L27/11526 ,  G11C16/0458 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7885 ,  H01L29/7887

摘要： In a memory cell (110) having multiple floating gates (160), the select gate (140) is formed before the floating gates. In some embodiments, the memory cell also has control gates (170) formed after the select gate. Substrate isolation regions (220) are formed in a semiconductor substrate (120). The substrate isolation regions protrude above the substrate. Then select gate lines (140) are formed. Then a floating gate layer (160) is deposited. The floating gate layer is etched until the substrate isolation regions are exposed. A dielectric (164) is formed over the floating gate layer, and a control gate layer (170) is deposited. The control gate layer protrudes upward over each select gate line. These the control gates and the floating gates are defined independently of photolithographic alignment. In another aspect, a nonvolatile memory cell has at least two conductive floating gates (160). A dielectric layer (164) overlying the floating gate has a continuous feature that overlies the floating gate and also overlays a sidewall of the select gate (140). Each control gate (160) overlies the continuous feature of the dielectric layer and also overlies the floating gate. In another aspect, substrate isolation regions (220) are formed in a semiconductor substrate. Select gate lines cross over the substrate isolation regions. Each select gate line has a planar top surface, but its bottom surface goes up and down over the substrate isolation regions. Other features are also provided.

摘要翻译： 在具有多个浮动栅极（160）的存储单元（110）中，在浮置栅极之前形成选择栅极（140）。 在一些实施例中，存储器单元还具有在选择栅极之后形成的控制栅极（170）。 衬底隔离区（220）形成在半导体衬底（120）中。 衬底隔离区突出于衬底上方。 然后选择栅极线（140）。 然后沉积浮栅层（160）。 蚀刻浮栅，直到衬底隔离区露出。 在浮动栅极层上形成电介质（164），并沉积控制栅极层（170）。 控制栅极层在每个选择栅极线上向上突出。 这些控制栅极和浮置栅极独立于光刻对准来定义。 在另一方面，非易失性存储单元具有至少两个导电浮动栅极（160）。 覆盖浮动栅极的介电层（164）具有覆盖在浮动栅极上并且还覆盖选择栅极（140）的侧壁的连续特征。 每个控制栅极（160）覆盖在电介质层的连续特征上并且也覆盖在浮动栅极上。 在另一方面，衬底隔离区（220）形成在半导体衬底中。 选择栅极线跨越衬底隔离区。 每个选择栅线具有平坦的顶表面，但其底表面在衬底隔离区上方上下移动。 还提供其他功能。

公开(公告)号：US07005338B2

公开(公告)日：2006-02-28

申请号：US10252143

申请日：2002-09-19

申请人： Yi Ding ,  Vei-Han Chan

发明人： Yi Ding ,  Vei-Han Chan

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/66825

摘要： A floating gate (110) of a nonvolatile memory cell is formed in a trench (114) in a semiconductor substrate (220). A dielectric (128) covers the surface of the trench. The wordline (140) has a portion overlying the trench. The cell's floating gate transistor has a first source/drain region (226), a channel region (224), and a second source/drain region (130). The dielectric (128) is stronger against leakage near at least a portion of the first source/drain region (122) than near at least a portion of the channel region. The stronger portion (128.1) of the additional dielectric improves data retention without increasing the programming and erase times if the programming and erase operations do not rely on a current through the stronger portion. Additional dielectric (210) has a portion located below the top surface of the substrate between the trench and a top part of the second source/drain region (130). The second source/drain region has a part located below the additional dielectric and meeting the trench. The additional dielectric can be formed with shallow trench isolation technology. The additional dielectric reduces the capacitance between the second source/drain region (130) and the floating gate.

摘要翻译： 非易失性存储单元的浮动栅极（110）形成在半导体衬底（220）中的沟槽（114）中。 电介质（128）覆盖沟槽的表面。 字线（140）具有覆盖沟槽的部分。 电池的浮栅晶体管具有第一源极/漏极区域（226），沟道区域（224）和第二源极/漏极区域（130）。 电介质（128）比在第一源极/漏极区域（122）的至少一部分附近比在沟道区域的至少一部分附近的泄漏更强。 如果编程和擦除操作不依赖于通过较强部分的电流，则附加介质的较强部分（128.1）可提高数据保持，而不会增加编程和擦除时间。 附加电介质（210）具有位于沟槽和第二源极/漏极区域（130）的顶部之间的衬底顶表面下方的部分。 第二源极/漏极区域具有位于附加电介质下方并满足沟槽的部分。 附加电介质可以用浅沟槽隔离技术形成。 附加电介质减小了第二源极/漏极区域（130）和浮动栅极之间的电容。

公开(公告)号：US20060039702A1

公开(公告)日：2006-02-23

申请号：US10921561

申请日：2004-08-19

申请人： Jun Su ,  Yi Ding

发明人： Jun Su ,  Yi Ding

IPC分类号： H04J14/02

CPC分类号： H04J14/0221

摘要： An automatic shutdown system for optical multiplexers and demultiplexers includes an optical switch that is disposed in a common optical channel between a transmitter and a receiver of an optical communication system. The optical switch may attenuate or block a signal in the common optical channel during power-off conditions. The optical switch may also provide a low insertion loss and low polarization loss in the common optical channel during power-on conditions.

摘要翻译： 用于光复用器和解复用器的自动关闭系统包括光开关，其设置在光通信系统的发射机和接收机之间的公共光信道中。 在断电条件下，光开关可能衰减或阻断公共光通道中的信号。 在开机状态下，光开关还可以在公共光通道中提供低插入损耗和低极化损耗。

公开(公告)号：US20050272205A1

公开(公告)日：2005-12-08

申请号：US11182875

申请日：2005-07-14

申请人： Yi Ding

发明人： Yi Ding

IPC分类号： H01L21/768 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76802 ,  H01L21/76895 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11546

摘要： A gate dielectric (150) for a gate (160) is formed by thermal oxidation simultaneously with as a dielectric on a surface of another gate (140). The dielectric thickness on the other gate is controlled by the dopant concentration in the other gate. The gates may be gates of different MOS transistors, or a select gate and a floating gate of a memory cell. Other features are also provided.

公开(公告)号：US06962851B2

公开(公告)日：2005-11-08

申请号：US10393212

申请日：2003-03-19

申请人： Yi Ding

发明人： Yi Ding

IPC分类号： H01L27/092 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/66825

摘要： In a nonvolatile memory, substrate isolation regions (220) are formed in a semiconductor substrate (120). The substrate isolation regions are dielectric regions protruding above the substrate. Then select gate lines (140) are formed. Then a floating gate layer (160) is deposited. The floating gate layer is etched until the substrate isolation regions are exposed and the floating layer is removed from over at least a portion of the select gate lines. A dielectric (1510) is formed over the floating gate layer, and a control gate layer (170) is deposited. The control gate layer protrudes upward over each select gate line. These protrusions are exploited to define the control gates independently of photolithographic alignment. The floating gates are then defined independently of any photolithographic alignment other than the alignment involved in patterning the substrate isolation regions and the select gate lines. In another aspect, a nonvolatile memory cell has a conductive floating gate (160). A dielectric layer (1510) overlying the floating gate has a continuous feature that overlies the floating gate and also overlies the select gate (140). The control gate (160) overlies the continuous feature of the dielectric layer and also overlies the floating gate but not the select gate. In another aspect, substrate isolation regions (220) are formed in a semiconductor substrate. Select gate lines cross over the substrate isolation regions. Each select gate line has a planar top surface, but its bottom surface goes up and down over the substrate isolation regions. Other features are also provided.

摘要翻译： 在非易失性存储器中，在半导体衬底（120）中形成衬底隔离区（220）。 衬底隔离区域是突出于衬底上方的电介质区域。 然后选择栅极线（140）。 然后沉积浮栅层（160）。 蚀刻浮栅，直到衬底隔离区被暴露，并且浮选层从至少一部分选择栅极线上去除。 在浮动栅极层上形成电介质（1510），并沉积控制栅极层（170）。 控制栅极层在每个选择栅极线上向上突出。 这些突起被利用来独立于光刻对准来限定控制栅。 然后，浮动栅极独立于除图案化衬底隔离区域和选择栅极线之外的对准的任何光刻对准。 在另一方面，非易失性存储单元具有导电浮动栅极（160）。 覆盖浮置栅极的介电层（1510）具有覆盖在浮动栅极上并且还覆盖选择栅极（140）的连续特征。 控制栅极（160）覆盖在电介质层的连续特征上，并且覆盖在浮动栅极而不是选择栅极。 在另一方面，衬底隔离区（220）形成在半导体衬底中。 选择栅极线跨越衬底隔离区。 每个选择栅线具有平坦的顶表面，但其底表面在衬底隔离区上方上下移动。 还提供其他功能。

公开(公告)号：US06951782B2

公开(公告)日：2005-10-04

申请号：US10632186

申请日：2003-07-30

申请人： Yi Ding

发明人： Yi Ding

IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L21/332

CPC分类号： H01L27/11526 ,  G11C16/0458 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/7887

摘要： In a nonvolatile memory cell having at least two floating gates, each floating gate (160) has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (140). The spacer can be formed from a layer (160.2) deposited after the layer (160.1) which provides a lower portion of the floating gate. Alternatively, the upward protruding portion and the lower portion can be formed from the same layers or sub-layers all of which are present in both portions. The control gate (170) can be defined without photolithography. Other embodiments are also provided.

摘要翻译： 在具有至少两个浮动栅极的非易失性存储单元中，每个浮动栅极（160）具有向上突出部分。 该部分可以形成为在选择门（140）的侧壁上的间隔物。 隔离物可以由沉积在提供浮动栅极的下部的层（160.1）之后的层（160.2）形成。 或者，向上突出部分和下部分可以由相同的层或子层形成，所有这些层或子层都存在于两个部分中。 控制栅极（170）可以在没有光刻的情况下被定义。 还提供了其他实施例。