利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

235 条记录 (耗时 0.044 秒)

    Method of fabricating a surface-type optical apparatus
    42.
    发明授权
    Method of fabricating a surface-type optical apparatus 失效
    制造表面型光学装置的方法

    公开(公告)号：US06974712B2

    公开(公告)日：2005-12-13

    申请号：US10995363

    申请日：2004-11-24

    申请人： Toshihiko Ouchi ,  Yasuhiro Shimada

    发明人： Toshihiko Ouchi ,  Yasuhiro Shimada

    IPC分类号： B81B3/00 ,  G01Q30/20 ,  G01Q60/00 ,  H01J3/14 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G01Q60/22

    摘要： A surface optical apparatus that includes a surface optical device with p-side and n-side electrodes, such as a surface emitting laser, a first substrate for supporting the surface optical device directly or through an elastic supporter formed of one or plural layers, and a first electrode wiring of at least a wire formed on the first substrate and electrically connected to one of the electrodes. A current is injected into or a voltage is applied across the surface optical device through the first electrode wiring and the p-side and n-side electrodes. A photodetector for detecting light from the surface optical device may also be arranged in the vicinity of the optical device.

    摘要翻译： 一种表面光学装置，包括具有诸如表面发射激光器的p侧和n侧电极的表面光学装置，用于直接支撑表面光学装置的第一基板或通过由一层或多层形成的弹性支撑件，以及 至少形成在所述第一基板上并与所述电极中的一个电连接的第一电极布线。 注入电流，或者通过第一电极布线和p侧电极和n侧电极在表面光学器件上施加电压。 用于检测来自表面光学装置的光的光检测器也可以布置在光学装置附近。

    Method of fabricating a surface-type optical apparatus
    46.
    发明申请
    Method of fabricating a surface-type optical apparatus 失效

    公开(公告)号：US20050074973A1

    公开(公告)日：2005-04-07

    申请号：US10995363

    申请日：2004-11-24

    申请人： Toshihiko Ouchi ,  Yasuhiro Shimada

    发明人： Toshihiko Ouchi ,  Yasuhiro Shimada

    IPC分类号： B81B3/00 ,  G01Q30/20 ,  G01Q60/00 ,  H01J3/14 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G01Q60/22

    摘要： A surface optical apparatus that includes a surface optical device with p-side and n-side electrodes, such as a surface emitting laser, a first substrate for supporting the surface optical device directly or through an elastic supporter formed of one or plural layers, and a first electrode wiring of at least a wire formed on the first substrate and electrically connected to one of the electrodes. A current is injected into or a voltage is applied across the surface optical device through the first electrode wiring and the p-side and n-side electrodes. A photodetector for detecting light from the surface optical device may also be arranged in the vicinity of the optical device.

    Semiconductor memory device and drive method therefor
    48.
    发明授权
    Semiconductor memory device and drive method therefor 失效
    半导体存储器件及其驱动方法

    公开(公告)号：US06707704B2

    公开(公告)日：2004-03-16

    申请号：US10392843

    申请日：2003-03-21

    申请人： Yoshihisa Kato ,  Yasuhiro Shimada ,  Takayoshi Yamada

    发明人： Yoshihisa Kato ,  Yasuhiro Shimada ,  Takayoshi Yamada

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： The semiconductor memory device of the invention includes at least three memory cell blocks arranged in a word line direction. Each of the memory cell blocks includes a plurality of memory cells arranged in a bit line direction. Each of the memory cells includes a ferroelectric capacitor for storing data by displacement of polarization of a ferroelectric film and a selection transistor connected to one of paired electrodes of the ferroelectric capacitor. Each of the memory cell blocks also includes: a bit line, a sub-bit line and a source line extending in the bit line direction; and a read transistor having a gate connected to one end of the sub-bit line, a source connected to the source line, and a drain connected to one end of the bit line. The read transistor reads data by detecting the displacement of the polarization of the ferroelectric film of the ferroelectric capacitor of a data read memory cell from which data is read among the plurality of memory cells. The sub-bit lines of any two of the memory cell blocks are connected to each other via a sub-bit line coupling switch.

    摘要翻译： 本发明的半导体存储器件包括沿字线方向布置的至少三个存储单元块。 每个存储单元块包括以位线方向排列的多个存储单元。 每个存储单元包括用于通过铁电薄膜的极化位移存储数据的铁电电容器和连接到铁电体电容器的一对电极之一的选择晶体管。 每个存储单元块还包括：位线，子位线和沿位线方向延伸的源极线; 以及读取晶体管，其具有连接到子位线的一端的栅极，连接到源极线的源极和连接到位线的一端的漏极。 读取晶体管通过检测在多个存储单元中从其读取数据的数据读取存储单元的铁电电容器的铁电体的极化的位移来读取数据。 任何两个存储单元块的子位线通过子位线耦合开关相互连接。

    Silver halide photosensitive material
    49.
    发明授权
    Silver halide photosensitive material 失效
    卤化银感光材料

    公开(公告)号：US06686140B2

    公开(公告)日：2004-02-03

    申请号：US10383771

    申请日：2003-03-10

    申请人： Naoki Asanuma ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

    发明人： Naoki Asanuma ,  Kohzaburoh Yamada ,  Yasuhiro Shimada

    IPC分类号： G03C108

    CPC分类号： G03C1/10 ,  G03C1/346 ,  Y10S430/156

    摘要： A silver halide photosensitive material comprises at least one light sensitive silver halide emulsion layer on a support. The silver halide photosensitive material contains at least one compound capable of undergoing a one-electron oxidation to thereby form a one-electron oxidation product thereof, the one-electron oxidation product being capable of releasing further one or more electrons, and at least one reducing compound having a C/H value of 3 or less; and another reducing compound having a C/H value of more than 3, the C/H value representing a ratio of (the number of Group IV elements)/(the sum of Groups III, V, VI and VII elements).

    摘要翻译： 卤化银感光材料在载体上包含至少一种感光卤化银乳剂层。 卤化银感光材料含有至少一种能够进行单电子氧化从而形成单电子氧化产物的化合物，该单电子氧化产物能够进一步释放一个或多个电子，并且至少一个还原 C / H值为3以下的化合物; 和C / H值大于3的另一种还原化合物，C / H值表示（IV族元素的数量）/（III，V，VI和VII族元素的总和）的比率。