公开(公告)号：US20100108296A1

公开(公告)日：2010-05-06

申请号：US12507676

申请日：2009-07-22

申请人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

发明人： Seok Hwan MOON ,  In Kyu You ,  Kyoung Ik Cho ,  Byoung Gon Yu

IPC分类号： F28D15/04

CPC分类号： F28D15/04 ,  F28D15/0233

摘要： Provided is a vapor-liquid phase change cooling device, which may be manufactured with no limitation of thickness.The cooling device includes a first thin plate including a groove-shaped capillary region, an evaporator section for evaporating a working fluid injected from outside, and a condenser section having a vapor condensation space for condensing the evaporated working fluid, a second thin plate having a vapor pathway for transporting the evaporated working fluid to the condenser section, and a third thin plate having a liquid pathway for transporting the working fluid condensed in the condenser section to the evaporator section.

摘要翻译： 提供一种气液相变冷却装置，可以制造而不限制厚度。 冷却装置包括：第一薄板，其包括槽状毛细管区域，用于蒸发从外部喷射的工作流体的蒸发器部分和具有用于冷凝蒸发的工作流体的蒸气冷凝空间的冷凝器部分;第二薄板，具有 用于将蒸发的工作流体输送到冷凝器部分的蒸气通道，以及具有用于将在冷凝器部分中冷凝的工作流体输送到蒸发器部分的液体通路的第三薄板。

公开(公告)号：US07667202B2

公开(公告)日：2010-02-23

申请号：US12182456

申请日：2008-07-30

申请人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

发明人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

IPC分类号： G01J5/20

CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023

摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

摘要翻译： 提供一种多层结构的测辐射热计及其制造方法。 在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。 因此，传感器结构通过仅一个支撑臂与基板电连接。 根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。 此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

公开(公告)号：US20080135825A1

公开(公告)日：2008-06-12

申请号：US11936503

申请日：2007-11-07

申请人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

发明人： Seung Yun Lee ,  Sung Min Yoon ,  Nam-Yeal Lee ,  Young Sam Park ,  Byoung Gon Yu

IPC分类号： H01L47/00 ,  H01L21/8239

CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1666

摘要： Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.

摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件包括设置在半导体衬底上的晶体管，包括栅电极和设置在栅电极两侧的第一和第二杂质区; 电连接到第一杂质区的位线; 以及电连接到所述第二杂质区的相变电阻器，其中所述相变电阻器包括：由掺杂的SiGe层形成的下电极; 与下电极接触的相变层; 以及连接到所述相变层的上电极。 下电极由掺杂的SiGe层形成，其具有高电阻率和低热导率，从而降低整个相变存储器件的复位电流和功耗。

公开(公告)号：US07233017B2

公开(公告)日：2007-06-19

申请号：US11082054

申请日：2005-03-15

申请人： Sung Min Yoon ,  Sangouk Ryu ,  Woong Chul Shin ,  Nam Yeal Lee ,  Byoung Gon Yu

发明人： Sung Min Yoon ,  Sangouk Ryu ,  Woong Chul Shin ,  Nam Yeal Lee ,  Byoung Gon Yu

IPC分类号： H01L47/00

CPC分类号： G11C11/5692 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.

摘要翻译： 一种多位相变存储器件，其被构造为使得多个单个相变存储器件在平面区域或垂直方向上对准，并且提供其驱动方法。 多位相变存储器件包括：相变材料层，具有与加热电极接触的多个接触部分，并且具有多个有源区域，每个有源区域形成单位相变存储器件。 相变材料层可以由多个有源区域以多个阵列排列的一个材料层构成。 或者，相变材料层可以由多个相变材料层构成，其中一个或多个有源区域分别对齐在一个阵列中。 多个相变材料层可以设置在平面区域的相同水平面上，或者多个相变材料层可以分别设置在相同垂直线上的不同平面区域上。

公开(公告)号：US07026639B2

公开(公告)日：2006-04-11

申请号：US10737071

申请日：2003-12-15

申请人： Seong Mok Cho ,  Sangouk Ryu ,  In Kyu You ,  Sung Min Yoon ,  Kwi Dong Kim ,  Nam Yeal Lee ,  Byoung Gon Yu

发明人： Seong Mok Cho ,  Sangouk Ryu ,  In Kyu You ,  Sung Min Yoon ,  Kwi Dong Kim ,  Nam Yeal Lee ,  Byoung Gon Yu

IPC分类号： H01L29/00 ,  H01L21/00 ,  G11C11/00

CPC分类号： H01L45/06 ,  H01L45/1226 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683 ,  H01L45/1691

摘要： Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.

摘要翻译： 提供了能够以低功耗运行的相变元件及其制造方法。 所述相变元件包括用作加热层的第一电极，与所述第一电极相邻地横向设置的第二电极，以及由相变材料制成的存储层，所述相变材料位于所述第一电极的侧表面之间并且与所述第一电极的侧表面接触 电极和第二电极。

公开(公告)号：US07989793B2

公开(公告)日：2011-08-02

申请号：US12326776

申请日：2008-12-02

申请人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

发明人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

IPC分类号： H01L29/02

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1666

摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

摘要翻译： 提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。 该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层 形成第二反应物层的材料。 相变存储器件消耗低功率并以高速运行。

公开(公告)号：US20110159669A1

公开(公告)日：2011-06-30

申请号：US13058047

申请日：2009-09-18

申请人： Woo Seok Yang ,  Seong mok Cho ,  Ho Jun Ryu ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

发明人： Woo Seok Yang ,  Seong mok Cho ,  Ho Jun Ryu ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

IPC分类号： H01L21/20

CPC分类号： C23C16/0227 ,  C23C16/24

摘要： Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.

摘要翻译： 提供了一种通过化学气相沉积（CVD）沉积非晶硅薄膜的方法，以防止当非晶硅薄膜沉积在被空气暴露污染的基底上时发生气泡缺陷。 沉积方法包括用等离子体激活的反应气体清洁污染的基底的表面，并在清洁的基底上沉积非晶硅薄膜。 这里，从基板清洗步骤到薄膜沉积步骤保持真空状态，以便通过再次暴露于空气来防止清洁的基板表面的污染。

公开(公告)号：US07952086B2

公开(公告)日：2011-05-31

申请号：US12122152

申请日：2008-05-16

申请人： Byoung Gon Yu ,  Sung Min Yoon ,  Se Young Choi ,  Tae Jin Park

发明人： Byoung Gon Yu ,  Sung Min Yoon ,  Se Young Choi ,  Tae Jin Park

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/14 ,  H01L45/1625 ,  H01L45/1666

摘要： Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.

摘要翻译： 提供了一种相变非易失性存储器件及其制造方法。 该装置包括：基板; 以及设置在所述基板上并且包括相变材料层的堆叠结构。 相变材料层由锑（Sb）和锌（Zn）的合金形成，使得相变存储器件可以稳定地高速运行并降低功耗。

公开(公告)号：US20100243994A1

公开(公告)日：2010-09-30

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20100155601A1

公开(公告)日：2010-06-24

申请号：US12511251

申请日：2009-07-29

申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

IPC分类号： H01L27/14 ,  B05D5/12 ,  H01L21/00

CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/10 ,  H01L31/022408 ,  H01L31/108

摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

摘要翻译： 提供了一种红外线传感器及其制造方法。 该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层， 连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。 因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。 因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。