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51 条记录 (耗时 0.038 秒)

    Memory modules with magnetoresistive elements and method of reading data from row or column directions
    41.
    发明授权
    Memory modules with magnetoresistive elements and method of reading data from row or column directions 失效
    具有磁阻元件的存储器模块和从行或列方向读取数据的方法

    公开(公告)号：US07123539B2

    公开(公告)日：2006-10-17

    申请号：US11180558

    申请日：2005-07-14

    申请人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

    发明人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

    IPC分类号： G11C8/00

    CPC分类号： G06F12/0207 ,  G11C8/10

    摘要： A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.

    摘要翻译： 存储单元模块包括由M列×N行的存储器单元形成的存储单元阵列。 每个存储单元包括具有半导体元件的磁阻元件或磁阻元件。 存储器模块包括通过列方向访问存储单元阵列的第一存取装置和通过行方向访问存储单元阵列的第二存取装置。 以这种方式，在行和列方向上从磁阻存储器模块读取数据。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    43.
    发明授权
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US07035137B2

    公开(公告)日：2006-04-25

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/00 ,  G11C7/04

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Magnetic memory device and method of manufacturing the same
    45.
    发明授权
    Magnetic memory device and method of manufacturing the same 失效
    磁记忆体装置及其制造方法

    公开(公告)号：US06914284B2

    公开(公告)日：2005-07-05

    申请号：US10722514

    申请日：2003-11-28

    申请人： Kentaro Nakajima ,  Keiji Hosotani

    发明人： Kentaro Nakajima ,  Keiji Hosotani

    IPC分类号： H01L27/105 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

    摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.

    摘要翻译： 磁存储器件包括沿第一方向延伸的第一互连，沿与第一方向不同的第二方向延伸的第二互连;布置在第一和第二互连之间的交叉点处的磁阻元件，以及 金属层，其连接到磁阻元件并具有与磁阻元件的侧表面部分重合的侧表面。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    46.
    发明申请
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US20050036362A1

    公开(公告)日：2005-02-17

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/15 ,  G11C29/04 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。