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50 条记录 (耗时 0.045 秒)

    Muffler
    41.
    发明申请
    Muffler 有权
    围巾

    公开(公告)号：US20070051558A1

    公开(公告)日：2007-03-08

    申请号：US11511512

    申请日：2006-08-29

    申请人： Masahiro Okawara ,  Koichi Fujita ,  Yoshiyuki Fujii

    发明人： Masahiro Okawara ,  Koichi Fujita ,  Yoshiyuki Fujii

    IPC分类号： F01N7/18

    CPC分类号： F01N1/084 ,  F01N13/18 ,  F01N2450/22 ,  Y10T29/49398

    摘要： A muffler includes a shell main that is formed in a cylinder with two openings opposite to each other being apart from each other in an axial direction of the shell main body by rolling a flat plate to have an overlapped portion overlapping an inner end portion and a shell portion, and a pair of end plates that are partially inserted in the openings of the shell main body and fixed to the shell main body. The inner end portion is formed with two cut-off portions at opening-side edges of the inner end portion, respectively, to avoid interference between the inner end portion and the end plates when the end plates are inserted into the openings of the shell main body.

    摘要翻译： 消声器包括壳体主体，其形成在气缸中，其具有彼此相对的两个彼此沿壳体主体的轴向方向彼此分开的开口，通过滚动平板以具有与内端部重叠的重叠部分和 外壳部分和一部分插入壳主体的开口中并固定到壳体主体上的端板。 内端部分别在内端部的开口侧边缘处形成两个切断部分，以便当端板插入壳体主体的开口中时，避免内端部与端板之间的干涉 身体。

    Field effect transistor with reverse dopant grandient region
    43.
    发明授权
    Field effect transistor with reverse dopant grandient region 失效
    具有反向掺杂剂区域的场效应晶体管

    公开(公告)号：US06794722B2

    公开(公告)日：2004-09-21

    申请号：US10315025

    申请日：2002-12-10

    申请人： Koichi Fujita

    发明人： Koichi Fujita

    IPC分类号： H01L2994

    CPC分类号： H01L29/1045 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/7835

    摘要： A p−−-type impurity layer is provided at a position located below n−-type impurity layers which are to become the drain of a MOSFET. Although the p−−-type impurity layer is of the same conductivity type as a semiconductor substrate, the p−−-type impurity layer is lower in doping level than the semiconductor substrate. The p−−-type impurity layer is formed so as to be joined to an n−-type impurity layer and such that the dosage of p-type impurity (i.e., the amount of included impurity) becomes higher with increasing distance from the thus-formed junction. The dosage of the area located in the vicinity of the junction is made lower, thereby rendering a depletion layer easy to spread when a drain voltage is applied. Thus, capacitance Cds developing between the drain and the substrate is reduced, and the operating speed of the MOSFET increases. Further, the structure of the MOSFET reduces fluctuations in the capacitance Cds stemming from fluctuations in the drain voltage, thereby suppressing power leakage and improving output efficiency.

    摘要翻译： 在位于MOSFET成为漏极的n +型杂质层之下的位置处设置p +型杂质层。 虽然p +型杂质层与半导体衬底具有相同的导电类型，但是p型 - 杂质层的掺杂水平低于半导体衬底。 形成p +型杂质层，以便与n +型杂质层接合，使得p型杂质的用量（即所含杂质的量）随着增加而增加 距离如此形成的交界处。 使得位于结点附近的区域的剂量较低，从而在施加漏极电压时使耗尽层容易扩散。 因此，在漏极和衬底之间形成的电容Cds减小，并且MOSFET的工作速度增加。 此外，MOSFET的结构减少了由漏极电压的波动引起的电容Cds的波动，从而抑制了电力泄漏并提高了输出效率。

    Activation control apparatus for passive vehicle occupant restraint and method of controlling activation of passive vehicle occupant restraint
    45.
    发明授权
    Activation control apparatus for passive vehicle occupant restraint and method of controlling activation of passive vehicle occupant restraint 有权
    被动车辆乘员约束的激活控制装置和被动车辆乘员约束的启动控制方法

    公开(公告)号：US06347268B1

    公开(公告)日：2002-02-12

    申请号：US09540546

    申请日：2000-03-31

    申请人： Koichi Fujita ,  Takao Akatsuka ,  Motomi Iyoda ,  Koichi Sugiyama ,  Hiromichi Fujishima ,  Tomokazu Sakaguchi

    发明人： Koichi Fujita ,  Takao Akatsuka ,  Motomi Iyoda ,  Koichi Sugiyama ,  Hiromichi Fujishima ,  Tomokazu Sakaguchi

    IPC分类号： G06F1700

    CPC分类号： B60R21/0133 ,  B60R21/013 ,  B60R21/01558 ,  B60R2021/01006 ,  B60R2021/0104 ,  B60R2021/01068 ,  B60R2021/01075 ,  B60R2021/01322

    摘要： A structure and method for enabling a passive vehicle occupant restraint to be activated at the earliest possible timing, irrespective of a type of a collision. A floor sensor measures a deceleration G applied to the length of a vehicle and outputs the deceleration as the measurement G. An arithmetic unit carries out a predetermined arithmetic operation on the measurement G output from the floor sensor, so as to determine a function f(G). A conditional activation unit has a variation pattern of a threshold value T that varies with a variation in velocity v of a non-stationary object. The conditional activation unit reads a threshold value T corresponding to an input velocity v from the variation pattern and compares the threshold value T with the value of the function f(G). In case that the value of the function f(G) exceeds the threshold value T, an activation signal A is input to a driving circuit. A satellite sensor outputs an ON signal when a deceleration of not less than a predetermined reference value is applied to the vehicle. A threshold variation pattern selection unit changes the variation pattern of the threshold value T against the velocity v used in the conditional activation unit to another variation pattern, in response to the ON signal output from the satellite sensor.

    摘要翻译： 无论碰撞类型如何，能够尽可能早地激活被动式车辆乘员约束的结构和方法。 地板传感器测量应用于车辆长度的减速度G并输出减速度作为测量值G.算术单元对从地板传感器输出的测量G执行预定的算术运算，以确定函数f（ G）。 条件激活单元具有根据非静止物体的速度v的变化而变化的阈值T的变化模式。 条件激活单元从变化模式读取对应于输入速度v的阈值T，并将阈值T与函数f（G）的值进行比较。 在函数f（G）的值超过阈值T的情况下，将激活信号A输入到驱动电路。 当不小于预定参考值的减速度被施加到车辆时，卫星传感器输出ON信号。 响应于从卫星传感器输出的ON信号，阈值变化模式选择单元将阈值T的变化模式相对于条件激活单元中使用的速度v改变为另一种变化模式。

    Activation control apparatus for passive vehicle occupant restraint and method of controlling activation of passive vehicle occupant restraint
    46.
    发明授权
    Activation control apparatus for passive vehicle occupant restraint and method of controlling activation of passive vehicle occupant restraint 失效
    被动车辆乘员约束的激活控制装置和被动车辆乘员约束的启动控制方法

    公开(公告)号：US06170864B2

    公开(公告)日：2001-01-09

    申请号：US08962386

    申请日：1997-10-31

    申请人： Koichi Fujita ,  Takao Akatsuka ,  Motomi Iyoda ,  Koichi Sugiyama ,  Hiromichi Fujishima ,  Tomokazu Sakaguchi

    发明人： Koichi Fujita ,  Takao Akatsuka ,  Motomi Iyoda ,  Koichi Sugiyama ,  Hiromichi Fujishima ,  Tomokazu Sakaguchi

    IPC分类号： B60R2132

    CPC分类号： B60R21/0133 ,  B60R21/013 ,  B60R21/01558 ,  B60R2021/01006 ,  B60R2021/0104 ,  B60R2021/01068 ,  B60R2021/01075 ,  B60R2021/01322

    摘要： A floor sensor 32 measures a deceleration G applied to the length of a vehicle and outputs the deceleration as the measurement G. An arithmetic unit 58 carries out a predetermined arithmetic operation on the measurement G output from the floor sensor 32, so as to determine a function f(G). A conditional activation unit 60 has a variation pattern of a threshold value T that varies with a variation in velocity v of a non-stationary object. The conditional activation unit 60 reads a threshold value T corresponding to an input velocity v from the variation pattern and compares the threshold value T with the value of the function f(G). In case that the value of the function f(G) exceeds the threshold value T, an activation signal A is input to a driving circuit 34. A satellite sensor 30 outputs an ON signal when a deceleration of not less than a predetermined reference value is applied to the vehicle. A threshold variation pattern changing unit 42 changes the variation pattern of the threshold value T against the velocity v used in the conditional activation unit 60 to another variation pattern, in response to the ON signal output from the satellite sensor 30. This structure of the present invention enables a passive vehicle occupant restraint to be activated at the earliest possible timing, irrespective of a type of a collision, in which the vehicle crashes.

    摘要翻译： 地面传感器32测量应用于车辆长度的减速度G，并输出减速度作为测量G.算术单元58对从地面传感器32输出的测量G执行预定的算术运算，以确定 函数f（G）。 条件激活单元60具有根据非静止物体的速度v的变化而变化的阈值T的变化模式。 条件激活单元60从变化模式读取与输入速度v对应的阈值T，并将阈值T与函数f（G）的值进行比较。 在功能f（G）的值超过阈值T的情况下，激活信号A被输入到驱动电路34.卫星传感器30当不小于预定参考值的减速度为 应用于车辆。 阈值变化模式改变单元42响应于从卫星传感器30输出的ON信号，将阈值T的变化模式相对于条件激活单元60中使用的速度v改变为另一变化模式。本结构 本发明使得被动车辆乘员约束能够在尽可能早的时间被激活，而不管碰撞的类型如何，车辆碰撞。

    Method of making a field effect transistor
    49.
    发明授权
    Method of making a field effect transistor 失效
    制作场效应晶体管的方法

    公开(公告)号：US5578509A

    公开(公告)日：1996-11-26

    申请号：US446298

    申请日：1995-05-22

    申请人： Koichi Fujita

    发明人： Koichi Fujita

    IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L21/266 ,  H01L21/335

    CPC分类号： H01L29/66659 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/7835

    摘要： A method for producing a field effect transistor including source and drain regions produced by implanting a dopant impurity employing a gate electrode as a mask includes producing a gate electrode at a region on a first conductivity type semiconductor substrate; implanting a dopant impurity producing a second conductivity type in the substrate employing the gate electrode as a mask, thereby producing source and drain regions having a first dopant impurity concentration; producing a photoresist pattern on the substrate covering a drain electrode side of the substrate and having an aperture at a source electrode side of the substrate on the opposite side of the gate electrode from the drain electrode side and implanting a dopant impurity producing the second conductivity type in the substrate employing the photoresist pattern as a mask, thereby converting the source region from a first dopant impurity concentration to a second, high dopant impurity concentration; and diagonally rotatingly implanting in the substrate a dopant impurity producing the first conductivity type employing the photoresist pattern as a mask, thereby producing a first conductivity type region with a higher dopant impurity concentration than the substrate that surrounds the source region.

    摘要翻译： 一种制造场效应晶体管的方法，其包括通过使用栅电极注入掺杂剂杂质作为掩模而产生的源区和漏区，包括在第一导电型半导体衬底上的区域上产生栅电极; 在采用栅极电极作为掩模的衬底中注入产生第二导电类型的掺杂杂质，从而产生具有第一掺杂杂质浓度的源区和漏区; 在覆盖衬底的漏电极侧的衬底上产生光致抗蚀剂图案，并且在栅电极的与漏电极侧相反的一侧具有在衬底的源电极侧的孔，并且注入产生第二导电类型的掺杂杂质 在使用光致抗蚀剂图案作为掩模的基板中，从而将源区域从第一掺杂剂杂质浓度转换为第二高掺杂剂杂质浓度; 并且在衬底中旋转地将在光刻胶图案中产生第一导电类型的掺杂剂杂质旋转植入掩膜，从而产生比围绕源极区域的衬底更高的掺杂剂杂质浓度的第一导电类型区域。

    Process for producing mixed tertiary amine oxide
    50.
    发明授权
    Process for producing mixed tertiary amine oxide 失效
    混合叔胺氧化物的制备方法

    公开(公告)号：US4650904A

    公开(公告)日：1987-03-17

    申请号：US676807

    申请日：1984-11-30

    申请人： Koichi Fujita

    发明人： Koichi Fujita

    IPC分类号： C11D1/75 ,  C07C291/04 ,  C07C135/02

    CPC分类号： C07C291/04

    摘要： A process for producing an aqueous solution of a straight-chain alkyl tertiary amine oxide and a branched-chain alkyl tertiary amine oxide by reacting aliphatic tertiary amines with an aqueous solution of hydrogen peroxide is disclosed. In this process, a tertiary amine which mainly consists of a branched-chain tertiary amine is first reacted with excess hydrogen peroxide, and then, a straight-chain alkyl tertiary amine which is substantially free of a branched-chain alkyl group is added to the reaction mixture for permitting further reaction with hydrogen peroxide. The process achieves a high overall conversion of the starting amines, and the final product has an extremely low level of residual hydrogen peroxide.

    摘要翻译： 公开了通过使脂族叔胺与过氧化氢水溶液反应制备直链烷基叔胺氧化物和支链烷基叔胺氧化物的水溶液的方法。 在该方法中，主要由支链叔胺组成的叔胺首先与过量的过氧化氢反应，然后将基本上不含支链烷基的直链烷基叔胺加入到 反应混合物，以进一步与过氧化氢反应。 该方法实现了起始胺的高总转化率，并且最终产物具有极低水平的残余过氧化氢。