公开(公告)号：US08779751B2

公开(公告)日：2014-07-15

申请号：US13275339

申请日：2011-10-18

申请人： Hisao Hori ,  Yoshikazu Abe ,  Yoshihiro Sato

发明人： Hisao Hori ,  Yoshikazu Abe ,  Yoshihiro Sato

IPC分类号： G01R19/00

CPC分类号： H01H57/00 ,  H01H2001/0084 ,  H01H2057/006

摘要： To restrict a bowing amount of a piezoelectric actuator, provided is a switching apparatus comprising a contact point section including a first contact point; and an actuator that moves a second contact point to contact or move away from the first contact point. The actuator includes a first piezoelectric film that expands and contracts according to a drive voltage to change a bowing amount of the actuator, and a second piezoelectric film that is provided in parallel with the first piezoelectric film and restricts bowing of the actuator when the drive voltage is not being supplied to the first piezoelectric film.

摘要翻译： 为了限制压电致动器的弯曲量，提供了一种开关装置，包括具有第一接触点的接触点部分; 以及致动器，其使第二接触点移动以接触或远离所述第一接触点移动。 致动器包括根据驱动电压而膨胀和收缩以改变致动器的弯曲量的第一压电膜和与第一压电膜并联设置的第二压电膜，并且当驱动电压 没有被提供给第一压电膜。

公开(公告)号：US08341657B2

公开(公告)日：2012-12-25

申请号：US12542078

申请日：2009-08-17

申请人： Tatsuya Yamasaki ,  Yoshihiro Sato ,  Seiichi Kato ,  Katsuhiko Kimura ,  Takahiro Yamaguchi ,  Yoshiro Konishi ,  Hidenao Saito

发明人： Tatsuya Yamasaki ,  Yoshihiro Sato ,  Seiichi Kato ,  Katsuhiko Kimura ,  Takahiro Yamaguchi ,  Yoshiro Konishi ,  Hidenao Saito

IPC分类号： G11B7/135

CPC分类号： G11B7/08582

摘要： An optical pickup, mounting a lens actuator 101 thereon, the lens actuator comprises: a lens 1 having an optical axis in direction in parallel with an optical disc; a holder 2, which holds the lens thereon; a first guide shaft 3 holding the holder, so as to regulate the holder to change a position thereof, into an inner surface direction of a surface having the optical axis of the lens as a normal line vector thereof; a second guide shaft 4, which regulates the holder to change the position thereof, into a normal line vector of an optical disc; and a reed screw, which moves the holder into direction of the optical axis of the lens, wherein a distance between the optical axis of the lens and the optical disc, a distance between a central axis of the first guide shaft and the optical disc, and a distance between a central axis of the second guide shaft and the optical disc are lager than a distance between a central axis of the reed screw and the optical disc.

摘要翻译： 在其上安装透镜致动器101的光学拾取器，透镜致动器包括：具有与光盘平行的方向的光轴的透镜1; 在其上保持透镜的保持器2; 保持保持器的第一引导轴3，以将保持器的位置调整为具有透镜的光轴的表面的内表面方向作为其法线矢量; 第二引导轴4，其将保持器改变其位置，调节成光盘的法线矢量; 以及将保持器移动到透镜的光轴的方向的簧片螺钉，其中透镜的光轴与光盘之间的距离，第一引导轴的中心轴线与光盘之间的距离， 并且第二引导轴的中心轴线与光盘之间的距离大于簧片螺钉的中心轴线与光盘之间的距离。

公开(公告)号：US08338859B2

公开(公告)日：2012-12-25

申请号：US12569429

申请日：2009-09-29

申请人： Takuya Kokawa ,  Sadahiro Kato ,  Yoshihiro Sato ,  Masayuki Iwami

发明人： Takuya Kokawa ,  Sadahiro Kato ,  Yoshihiro Sato ,  Masayuki Iwami

IPC分类号： H01L21/02 ,  H01L21/338

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor electronic device comprises a substrate; a buffer layer formed on said substrate, having two or more layers of composite layers in which a first semiconductor layer comprising nitride based compound semiconductor having smaller lattice constant and greater coefficient of thermal expansion than the substrate and a second semiconductor layer comprising nitride based compound semiconductor having smaller lattice constant and smaller coefficient of thermal expansion than the first semiconductor layer are alternately laminated; a semiconductor operating layer comprising nitride based compound semiconductor formed on said buffer layer; a dislocation reducing layer comprising nitride based compound semiconductor, formed in a location between a location directly under said buffer layer and inner area of said semiconductor operating layer, and comprising a lower layer area and an upper layer area each having an uneven boundary surface, wherein threading dislocation extending from the lower layer area to the upper layer area is bent at said boundary surface.

摘要翻译： 半导体电子器件包括衬底; 形成在所述基板上的缓冲层，具有两层或多层复合层，其中第一半导体层包含氮化物基化合物半导体，该氮化物基化合物半导体具有比基板更小的晶格常数和更大的热膨胀系数，第二半导体层包括氮化物基化合物半导体 具有比第一半导体层更小的晶格常数和较小的热膨胀系数交替层压; 半导体工作层，包括形成在所述缓冲层上的氮化物基化合物半导体; 形成在直接位于所述缓冲层下方的位置与所述半导体工作层的内部区域之间的位置处的氮化物基化合物半导体的位错降低层，并且包括具有不均匀边界面的下层区域和上层区域，其中， 从所述下层区延伸到所述上层区域的穿透位错在所述边界面弯曲。

公开(公告)号：US08107272B2

公开(公告)日：2012-01-31

申请号：US12474995

申请日：2009-05-29

申请人： Yoshihiro Sato

发明人： Yoshihiro Sato

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/74 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/24

摘要： A nonvolatile semiconductor memory device including a memory cell including a resistance memory element which changes from a low resistance state into a high resistance state by application of a voltage which is higher than a reset voltage and lower than a set voltage and changes from the high resistance state into the low resistance state by application of a voltage higher than the set voltage; a first transistor including a first source/drain diffused layer, and having one end of the first source/drain diffused layer coupled to one end of the resistance memory element; and a second transistor including a second source/drain diffused layer, and having one end of the second source/drain diffused layer coupled to said one end of the resistance memory element and the other end of the second source/drain diffused layer coupled to the other end of the resistance memory element.

摘要翻译： 一种非易失性半导体存储器件，包括具有电阻存储元件的存储单元，该电阻存储元件通过施加高于复位电压且低于设定电压的电压并从高电阻变化而从低电阻状态变为高电阻状态 通过施加高于设定电压的电压，进入低电阻状态; 第一晶体管，包括第一源极/漏极扩散层，并且所述第一源极/漏极扩散层的一端耦合到所述电阻存储元件的一端; 以及第二晶体管，包括第二源/漏扩散层，并且所述第二源极/漏极扩散层的一端耦合到所述电阻存储元件的所述一端，并且所述第二源极/漏极扩散层的另一端耦合到 电阻记忆元件的另一端。

公开(公告)号：US08067787B2

公开(公告)日：2011-11-29

申请号：US12364966

申请日：2009-02-03

申请人： Takuya Kokawa ,  Sadahiro Kato ,  Yoshihiro Sato ,  Masayuki Iwami

发明人： Takuya Kokawa ,  Sadahiro Kato ,  Yoshihiro Sato ,  Masayuki Iwami

IPC分类号： H01L21/02

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/155 ,  H01L29/2003

摘要： A semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer in which a first semiconductor layer formed of a nitride-based compound semiconductor layer having a lattice constant smaller than a lattice constant of the substrate and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate and a second semiconductor layer formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate are alternately laminated; an intermediate layer provided between the substrate and the buffer layer, the intermediate layer being formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate; and a semiconductor active layer formed on the buffer layer, the semiconductor active layer being formed of a nitride-based compound semiconductor, wherein: thicknesses of the first semiconductor layers in the buffer layer are non-uniform thereamong, and at least one of the first semiconductor layer has a thickness greater than a critical thickness, the critical thickness being a thickness above which a direction of warp caused by the first semiconductor layer to the substrate is inverted.

摘要翻译： 半导体电子器件包括衬底; 形成在所述基板上的缓冲层，所述缓冲层包括不少于两层的复合层，其中由氮化物基化合物半导体层形成的第一半导体层的晶格常数小于所述基板的晶格常数， 膨胀系数大于衬底的热膨胀系数，以及由具有小于第一半导体层的晶格常数的晶格常数的氮化物系化合物半导体形成的第二半导体层和大于第一半导体层的热膨胀系数的热膨胀系数 基板交替层压; 设置在所述基板和所述缓冲层之间的中间层，所述中间层由格子常数小于所述第一半导体层的晶格常数的氮化物系化合物半导体形成，所述中间层的热膨胀系数大于所述第一半导体层的热膨胀系数 基材; 以及形成在所述缓冲层上的半导体有源层，所述半导体有源层由氮化物系化合物半导体形成，其中：所述缓冲层中的所述第一半导体层的厚度不均匀，所述第一半导体层的至少一个 半导体层的厚度大于临界厚度，临界厚度是由第一半导体层向衬底引起的翘曲方向反转的厚度。

公开(公告)号：US08018004B2

公开(公告)日：2011-09-13

申请号：US12028601

申请日：2008-02-08

申请人： Yoshihiro Sato ,  Hisashi Ogawa

发明人： Yoshihiro Sato ,  Hisashi Ogawa

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/092

摘要： A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film formed on a first active region, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film formed on a second active region and made of an insulating material different from that of the first gate insulating film, and a second gate electrode formed on the second gate insulating film. Upper regions of the first gate electrode and the second gate electrode are electrically connected to each other on the isolation region located between the first active region and the second active region, and lower regions thereof are separated from each other with a sidewall insulating film made of the same insulating material as that of the first gate insulating film being interposed therebetween.

摘要翻译： 半导体器件包括第一MIS晶体管和第二MIS晶体管。 第一MIS晶体管包括形成在第一有源区上的第一栅极绝缘膜和形成在第一栅极绝缘膜上的第一栅电极。 第二MIS晶体管包括形成在第二有源区上并由与第一栅极绝缘膜的绝缘材料不同的绝缘材料制成的第二栅极绝缘膜，以及形成在第二栅极绝缘膜上的第二栅电极。 第一栅极电极和第二栅电极的上部区域在位于第一有源区域和第二有源区域之间的隔离区域上彼此电连接，并且其下部区域由侧壁绝缘膜彼此分离，侧壁绝缘膜由 与第一栅极绝缘膜的绝缘材料相同的绝缘材料插入其间。

公开(公告)号：US07915179B2

公开(公告)日：2011-03-29

申请号：US11718582

申请日：2005-11-02

申请人： Yoshihiro Sato ,  Tomoe Nakayama ,  Hiroshi Kobayashi ,  Yoshinori Osaki ,  Tetsuro Takahashi

发明人： Yoshihiro Sato ,  Tomoe Nakayama ,  Hiroshi Kobayashi ,  Yoshinori Osaki ,  Tetsuro Takahashi

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207

摘要： In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.

摘要翻译： 在通过对基板上的氧化膜进行等离子体氮化处理，然后在处理室（51）中对基板进行退火来形成绝缘膜的方法中，在667Pa以下的低压下退火基板。 退火进行5或45秒。 等离子体氮化处理通过使用平面天线由微波等离子体进行，由此形成多个槽孔。

公开(公告)号：US07915177B2

公开(公告)日：2011-03-29

申请号：US12694900

申请日：2010-01-27

申请人： Tatsuo Nishita ,  Shuuichi Ishizuka ,  Yutaka Fujino ,  Toshio Nakanishi ,  Yoshihiro Sato

发明人： Tatsuo Nishita ,  Shuuichi Ishizuka ,  Yutaka Fujino ,  Toshio Nakanishi ,  Yoshihiro Sato

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3145 ,  H01L27/10873

摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.

摘要翻译： 在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。 通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。 通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。 即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。

公开(公告)号：US07906347B2

公开(公告)日：2011-03-15

申请号：US12826852

申请日：2010-06-30

申请人： Yoshihiro Sato

发明人： Yoshihiro Sato

IPC分类号： H01L21/00 ,  H01L21/8234 ,  H01L21/20

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08

摘要： In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.

摘要翻译： 在MRAM中，弯曲区域（206）形成在位线（202）中，该弯曲区域（206）处于弯曲形状，TMR元件（203）作为中心，在这种情况下为粗糙 U形（在所示示例中，大致倒U形）。 其中形成弯曲区域（206）的位线（202）包括在由弯曲区域（206）形成的空间中的TMR元件（203）。 由于这种相对简单的结构，这种结构实现了高度可靠的MRAM，其确保了在将数据写入存储器单元期间基本上节省功率，同时满足对器件进一步小型化的要求。

公开(公告)号：US07855012B2

公开(公告)日：2010-12-21

申请号：US11495741

申请日：2006-07-31

申请人： Toshio Takeshita ,  Yoichi Miyajima ,  Hiroaki Sato ,  Atsushi Takahashi ,  Shoichi Shintani ,  Kei Tashiro ,  Osamu Nagashima ,  Hideki Kamiya ,  Hisashi Aoki ,  Toshiyuki Okada ,  Yoshihiro Sato

发明人： Toshio Takeshita ,  Yoichi Miyajima ,  Hiroaki Sato ,  Atsushi Takahashi ,  Shoichi Shintani ,  Kei Tashiro ,  Osamu Nagashima ,  Hideki Kamiya ,  Hisashi Aoki ,  Toshiyuki Okada ,  Yoshihiro Sato

IPC分类号： H01M2/04 ,  H01M2/22

CPC分类号： H01M2/1066 ,  H01M2/04 ,  H01M2/0473 ,  H01M2/06 ,  H01M2/342

摘要： A secondary battery for electronic appliance to be installed in an electronic appliance, thereby feeding an electric power to the electronic appliance, is disclosed, which includes: a battery cell in which a positive electrode, a negative electrode and an electrolyte are accommodated in a pack, and a positive electrode terminal and a negative electrode terminal from the positive electrode and the negative electrode, respectively are lead out from the same side face of the pack; a metallic battery can in which one opening from which the battery cell is inserted is formed and which accommodates the battery cell therein such that the side face from which the positive electrode terminal and the negative electrode terminal are lead out is faced towards the opening side; and a lid made of a synthetic resin in which a positive electrode terminal part and a negative electrode terminal part to be connected to the electrodes of the electronic appliance upon being connected to the positive electrode terminal and the negative electrode terminal and being faced outwardly are provided and which plugs the opening of the battery can.

摘要翻译： 一种电子设备的二次电池，其安装在电子设备中，从而向电子设备供电，其特征在于，包括：将正极，负极和电解质容纳在电池组中的电池单体 ，分别从正极和负极的正极端子和负极端子从组件的同一侧面导出; 形成有插入电池单元的一个开口的金属电池罐，并且容纳电池单元，使得正电极端子和负电极端子从其侧面朝向开口侧; 以及由合成树脂构成的盖子，其中，在与正极端子和负极端子连接并面向外部的同时，设置有与电子设备的电极连接的正极端子部和负极端子部 并且其插入电池罐的开口。