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1.发明授权Method of forming gate insulation film, semiconductor device, and computer recording medium 失效形成栅极绝缘膜，半导体器件和计算机记录介质的方法公开(公告)号：US07915177B2
公开(公告)日：2011-03-29
申请号：US12694900
申请日：2010-01-27
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译： 在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。 通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。 通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。 即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。
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2.发明申请METHOD OF FORMING GATE INSULATION FILM, SEMICONDUCTOR DEVICE, AND COMPUTER RECORDING MEDIUM 失效形成绝缘膜的方法，半导体器件和计算机记录介质公开(公告)号：US20100130023A1
公开(公告)日：2010-05-27
申请号：US12694900
申请日：2010-01-27
IPC分类号： H01L21/3115
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译： 在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。 通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。 通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。 即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。
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3.发明申请Method of Forming Gate Insulating Film, Semiconductor Device and Computer Recording Medium 失效形成栅极绝缘膜，半导体器件和计算机记录介质的方法公开(公告)号：US20070290247A1
公开(公告)日：2007-12-20
申请号：US11718292
申请日：2005-10-27
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译： 在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。 通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。 通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。 即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。
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4.发明授权Method of forming gate insulating film, semiconductor device and computer recording medium 失效形成栅极绝缘膜，半导体器件和计算机记录介质的方法公开(公告)号：US07674722B2
公开(公告)日：2010-03-09
申请号：US11718292
申请日：2005-10-27
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L27/10873
摘要： In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.
摘要翻译： 在本发明中，当形成DRAM中的栅极绝缘膜时，构成栅极绝缘膜的基底的氧化膜被等离子体氮化。 通过使用具有大量通孔的平面天线产生的微波等离子体进行等离子体氮化。 通过等离子体氮化形成的栅极绝缘膜中的氮浓度以原子百分比为5〜20％。 即使不进行随后的退火，也可以有效地防止DRAM中的硼渗透现象，并且能够减少膜中的陷阱，导致器件的驱动能力下降。
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5.发明申请METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开形成绝缘膜的方法和制造半导体器件的方法公开(公告)号：US20090239364A1
公开(公告)日：2009-09-24
申请号：US11910332
申请日：2006-03-28
IPC分类号： H01L21/31 , H01L21/28 , C23C16/511
CPC分类号： H01L21/28211 , H01J37/32192 , H01J37/3222 , H01L21/0214 , H01L21/02238 , H01L21/02252 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a method for forming a gate insulating film comprising an oxidation step wherein a silicon oxide film is formed by having an oxygen-containing plasma act on silicon in the surface of an object to be processed in a processing chamber of a plasma processing apparatus. The processing temperature in the oxidation step is more than 600° C. and not more than 1000° C., and the oxygen-containing plasma is formed by introducing an oxygen-containing processing gas containing at least a rare gas and an oxygen gas into the process chamber while introducing a high frequency wave or microwave into the process chamber through an antenna.
摘要翻译： 公开了一种形成栅极绝缘膜的方法，其包括氧化步骤，其中通过在等离子体处理设备的处理室中的待处理物体的表面中的含氧等离子体作用于硅上而形成氧化硅膜。 氧化步骤中的处理温度大于600℃且不超过1000℃，并且通过将至少含有稀有气体和氧气的含氧处理气体引入到含氧等离子体中而形成含氧等离子体 处理室，同时通过天线将高频波或微波引入处理室。
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公开(公告)号：US08961735B2
公开(公告)日：2015-02-24
申请号：US13425872
申请日：2012-03-21
申请人： Yutaka Fujino , Atsushi Ueda , Shigenori Ozaki , Junichi Kitagawa
发明人： Yutaka Fujino , Atsushi Ueda , Shigenori Ozaki , Junichi Kitagawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32201 , C23C16/511 , H01J37/32211 , H01J37/32238 , H01J37/32431 , H05H1/46 , H05H2001/463
摘要： A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.
摘要翻译： 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。
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公开(公告)号：US20110017706A1
公开(公告)日：2011-01-27
申请号：US12668106
申请日：2008-07-10
申请人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
发明人： Tetsuro Takahashi , Yutaka Fujino , Hiroyuki Toshima , Atsushi Kubo , Song Yun Kang , Peter Ventzek , Sumie Segawa
IPC分类号： C23F1/08 , C23C16/50 , C23F1/00 , C23C16/511 , C23C16/00
CPC分类号： H01L21/3145 , H01J37/32192 , H01J37/3222 , H01L21/02247 , H01L21/02332 , H01L21/318 , H01L21/67069 , H01L21/68735 , H01L21/68742
摘要： A wafer is disposed in a chamber, a plasma generating space is formed in the chamber, plasma processing is performed to the front surface of the processing object while keeping at least the front surface of the processing object in contact with the plasma generating space. The plasma processing is performed with the plasma generating space being kept in contact with at least the peripheral region of the back surface of the processing object.
摘要翻译： 将晶片设置在室中，在室内形成等离子体产生空间，同时至少使处理对象的前表面与等离子体产生空间保持接触，对处理对象的前表面进行等离子体处理。 等离子体处理是在等离子体产生空间与加工对象的后表面的至少周边区域保持接触的情况下进行的。
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公开(公告)号：US6047682A
公开(公告)日：2000-04-11
申请号：US43212
申请日：1998-03-17
申请人： Yutaka Fujino , Akihiko Sekiguchi
发明人： Yutaka Fujino , Akihiko Sekiguchi
CPC分类号： F02D41/3827 , F02D41/3809 , F02D41/3836 , F02M47/027 , F02D2200/0406 , F02D2200/0414 , F02D2200/0602 , F02D2200/0606 , F02D2250/31
摘要： In an accumulator type fuel injection control device, a feed hole (28) provides communication between a common rail (24) for storing fuel from a fuel pressure pump (29) and a fuel injection valve (11); a control oil passage (23a, 23b, 23c) extends from the feed hole (28) to an oil chamber (19); a three-way electromagnetic valve (23) exerts the pressure of a fuel oil on the oil chamber (19) to close a needle valve (15), and discharges the fuel oil in the oil chamber (19) to a fuel return passage (51) to open the needle valve (15); fuel oil pressure correcting means (103) corrects a fuel oil pressure P.sub.0 on the basis of a fuel oil temperature t.sub.F detected by fuel oil temperature detecting means (44); and simultaneously, fuel injection volume correcting means (108) corrects a fuel injection volume Q.sub.0 ; whereby the temperature of fuel flowing to a fuel return system is suppressed to prevent damage to members used in the fuel return system.
摘要翻译： PCT No.PCT / JP97 / 02461 Sec。 371日期：1998年3月17日 102（e）1998年3月17日PCT 1997年7月16日PCT公布。 第WO98 / 02654号公报 1998年1月22日在蓄能式燃料喷射控制装置中，进料孔（28）提供用于储存来自燃料压力泵（29）和燃料喷射阀（11）的燃料的共轨（24）之间的连通。 控制油路（23a，23b，23c）从进料孔（28）延伸到油室（19）; 三通电磁阀（23）在油室（19）上施加燃油的压力以关闭针阀（15），并将油室（19）中的燃料油排出到燃料返回通道 51）打开针阀（15）; 燃料油压力校正装置（103）基于由燃料油温度检测装置（44）检测的燃料油温度tF来校正燃料油压力P0; 同时，燃料喷射量校正装置（108）校正燃料喷射量Q0; 从而抑制流向燃料返回系统的燃料的温度，以防止对燃料返回系统中使用的构件造成损坏。
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公开(公告)号：US07004679B2
公开(公告)日：2006-02-28
申请号：US10301351
申请日：2002-11-21
申请人： Ryoichi Naka , Toshihiko Yoshizumi , Shinichi Nakata , Fumio Kondoh , Seiichi Satoh , Osamu Ishita , Yutaka Fujino , Tukasi Chiba
发明人： Ryoichi Naka , Toshihiko Yoshizumi , Shinichi Nakata , Fumio Kondoh , Seiichi Satoh , Osamu Ishita , Yutaka Fujino , Tukasi Chiba
摘要： The present invention relates to a novel easily-cuttable tunnel segment structure used for the departure of a shield machine from a main tunnel to a branch tunnel or the return to the main tunnel from the branch tunnel, and provides an easily-cuttable tunnel segment structure 1 constructed by connecting a plurality of easily-cuttable tunnel segment pieces 2 in the longitudinal direction of a tunnel, wherein at least an easily-cuttable area 3 is formed by concrete 7 in which easily-cuttable reinforcement members are arranged, and a join disposed at least in the easily-cuttable area 3 in the longitudinal direction has an easily-cuttable join structure.
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