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    Keyword output apparatus and method
    2.
    发明授权
    Keyword output apparatus and method 有权
    关键词输出装置及方法

    公开(公告)号：US08244773B2

    公开(公告)日：2012-08-14

    申请号：US12613984

    申请日：2009-11-06

    申请人： Kanji Uchino ,  Tetsuro Takahashi ,  Seishi Okamoto

    发明人： Kanji Uchino ,  Tetsuro Takahashi ,  Seishi Okamoto

    IPC分类号： G06F15/16 ,  G06F17/20

    CPC分类号： G06F17/30864

    摘要： Related keywords having certain relations to a target keyword are extracted from a unit storing keywords according to relations among each other. Expressions corresponding to the target keyword and related keywords are read from a unit storing expressions correspondingly with each stored keyword, each expression having been extracted from a content containing the corresponding keyword. A commonness between the expressions corresponding to each related keyword and the target keyword is calculated. An association between each related keyword and the target keyword is calculated using a distance for each related keyword from the target keyword and the commonness. A related keyword having a certain association is extracted as a same-region keyword in a same region as the target keyword. A drawing including the target keyword and related keywords arranged according to the associations is output with the same-region keyword displayed distinguishably from other related keywords not included in the same region.

    摘要翻译： 根据关系，从存储关键字的单元中提取与目标关键词具有一定关系的相关关系。 对应于目标关键字和相关关键字的表达式从存储与每个存储的关键词相对应的表达式的单元中读取，每个表达式已经从包含相应关键字的内容中提取出来。 计算与每个相关关键字对应的表达式与目标关键字之间的共同性。 使用来自目标关键字的每个相关关键字的距离和共同性来计算每个相关关键字和目标关键字之间的关联。 将具有一定关联的相关关键字作为与目标关键词相同的区域中的相同区域关键字提取。 输出包括根据关联设置的目标关键字和相关关键词的图形，其中显示与不包括在相同区域中的其他相关关键字可区分地显示的相同区域关键字。

    KEYWORD OUTPUT APPARATUS AND METHOD
    7.
    发明申请
    KEYWORD OUTPUT APPARATUS AND METHOD 有权
    关键词输出装置及方法

    公开(公告)号：US20100138428A1

    公开(公告)日：2010-06-03

    申请号：US12613984

    申请日：2009-11-06

    申请人： Kanji Uchino ,  Tetsuro Takahashi ,  Seishi Okamoto

    发明人： Kanji Uchino ,  Tetsuro Takahashi ,  Seishi Okamoto

    IPC分类号： G06F17/30

    CPC分类号： G06F17/30864

    摘要： Related keywords having certain relations to a target keyword are extracted from a unit storing keywords according to relations among each other. Expressions corresponding to the target keyword and related keywords are read from a unit storing expressions correspondingly with each stored keyword, each expression having been extracted from a content containing the corresponding keyword. A commonness between the expressions corresponding to each related keyword and the target keyword is calculated. An association between each related keyword and the target keyword is calculated using a distance for each related keyword from the target keyword and the commonness. A related keyword having a certain association is extracted as a same-region keyword in a same region as the target keyword. A drawing including the target keyword and related keywords arranged according to the associations is output with the same-region keyword displayed distinguishably from other related keywords not included in the same region.

    摘要翻译： 根据关系，从存储关键字的单元中提取与目标关键词具有一定关系的相关关系。 对应于目标关键字和相关关键字的表达式从存储与每个存储的关键词相对应的表达式的单元中读取，每个表达式已经从包含相应关键字的内容中提取出来。 计算与每个相关关键字对应的表达式与目标关键字之间的共同性。 使用来自目标关键字的每个相关关键字的距离和共同性来计算每个相关关键字和目标关键字之间的关联。 将具有一定关联的相关关键字作为与目标关键词相同的区域中的相同区域关键字提取。 输出包括根据关联设置的目标关键字和相关关键词的图形，其中显示与不包括在相同区域中的其他相关关键字可区分地显示的相同区域关键字。

    METHOD OF MEASURING NITROGEN CONTENT, METHOD OF FORMING SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MEASURING NITROGEN CONTENT, METHOD OF FORMING SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 失效
    测定氮含量的方法，形成硅氧烷膜的方法和生产半导体器件的方法

    公开(公告)号：US20090253221A1

    公开(公告)日：2009-10-08

    申请号：US12300877

    申请日：2007-05-17

    申请人： Jiro Katsuki ,  Tetsuro Takahashi ,  Shuuichi Ishizuka

    发明人： Jiro Katsuki ,  Tetsuro Takahashi ,  Shuuichi Ishizuka

    IPC分类号： H01L21/66 ,  G06F19/00

    CPC分类号： H01L22/20 ,  G06F19/00 ,  H01J37/32192 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L22/12 ,  H01L29/66621 ,  H01L29/785

    摘要： The total film thickness T1N of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon oxynitride film, silicon oxide film and silicon oxide film resulting from the re-oxidization on the target substrate is measured. Separately, a reference substrate provided with silicon oxide film is re-oxidized, and, after the re-oxidization, the total film thickness T2 of the silicon oxide film and silicon oxide film resulting from the re-oxidization on the reference substrate is measured. Re-oxidization rate reduction ratio RORR of the measurement target substrate is calculated by the following formula (1) from the values of total film thicknesses T1N, T2N and T2. The nitrogen concentration of the silicon oxynitride film of the target substrate is determined from the calculated re-oxidization rate reduction ratio RORR. RORR (%)={(T2−T2N)/(T2−T1N)}×100 (1).

    摘要翻译： 测量作为其下层保留的氮氧化硅膜和氧化硅膜的总膜厚度T1N。 测量对象衬底被再氧化，并且在再氧化之后，测量由目标衬底上的再氧化产生的氮氧化硅膜，氧化硅膜和氧化硅膜的总膜厚度（T2N）。 另外，设置有氧化硅膜的参考基板被再次氧化，并且在再氧化之后，测量由参考基板上的再氧化产生的氧化硅膜和氧化硅膜的总膜厚度T2。 根据总膜厚T1N，T2N，T2的值，通过下式（1）计算测定对象基板的再氧化率降低率RORR。 根据计算出的再氧化速率降低率RORR求出目标基板的氮氧化硅膜的氮浓度。 RORR（％）= {（T2-T2N）/（T2-T1N）}×100（1）。

    Plasma surface treatment method, quartz member, plasma processing apparatus and plasma processing method
    10.
    发明授权
    Plasma surface treatment method, quartz member, plasma processing apparatus and plasma processing method 有权
    等离子体表面处理方法，石英构件，等离子体处理装置和等离子体处理方法

    公开(公告)号：US07857984B2

    公开(公告)日：2010-12-28

    申请号：US11829600

    申请日：2007-07-27

    申请人： Tetsuro Takahashi

    发明人： Tetsuro Takahashi

    IPC分类号： B44C1/22 ,  H01L21/302

    CPC分类号： C03C23/006 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238

    摘要： A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N2 gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm2, the surface treatment being repeated 25 to 2000 times.

    摘要翻译： 一种等离子体表面处理方法，用于通过使用离子能量大于约5.3eV的等离子体在等离子体暴露环境下使用的石英构件进行表面处理。 等离子体在石英构件的表面附近具有高于或等于约2eV的电子温度。 此外，在通过具有多个槽的平面天线将微波引入处理室来产生等离子体的等离子体处理装置中，通过使用包含有多个槽的处理气体的等离子体进行表面处理约30〜300秒 Ar气体和N 2气体，处理压力低于或等于约15Pa，微波功率高于或等于约0.9W / cm 2的条件下，表面处理重复25〜2000次。