METHOD FOR FILM DEPOSITING GROUP III NITRIDE SUCH AS GALLIUM NITRIDE
    43.
    发明申请
    METHOD FOR FILM DEPOSITING GROUP III NITRIDE SUCH AS GALLIUM NITRIDE 审中-公开
    用于将III类氮化物沉积的方法用作氮化镓

    公开(公告)号:US20090170294A1

    公开(公告)日:2009-07-02

    申请号:US11997980

    申请日:2006-08-03

    IPC分类号: H01L21/20

    摘要: [Problem to be Solved] To film deposit a group III nitride such as GaN using atmospheric pressure plasma.[Solving Means] A reactor chamber 12 is filled with a pure nitrogen of approximately atmospheric pressure of about 40 kPa. A c-face sapphire substrate 90 is placed on an electrode 14. The substrate temperature is brought to 650 degree centigrade by a heater 15. An electric field is applied between electrodes 13, 14 to form a discharge space 11a therebetween. In a gas feed system 20, a small quantity of trimethylgallium is added to N2, the resultant is fed into a discharge space 11a and brought into contact with the sapphire substrate 90. A V/III ratio on the substrate 90 is brought into a range of from 10 to 100000.

    摘要翻译: [待解决的问题]使用大气压等离子体对III族氮化物(例如GaN)进行成膜。 [解决方案]反应器室12填充有大约40kPa的大气压的纯氮。 将c面蓝宝石衬底90放置在电极14上。衬底温度通过加热器15达到650摄氏度。电场施加在电极13,14之间,以形成放电空间11a。 在气体供给系统20中,向N 2中加入少量的三甲基镓,将其送入放电空间11a并与蓝宝石衬底90接触。衬底90上的AV / III比达到 从10到10万。

    Image processing
    45.
    发明授权
    Image processing 失效
    图像处理

    公开(公告)号:US07348978B2

    公开(公告)日:2008-03-25

    申请号:US11147387

    申请日:2005-06-08

    IPC分类号: G06T15/00

    CPC分类号: G06T15/20 G06T11/203

    摘要: Provided is image processing technology capable of displaying lines on a field clearly on a screen regardless of the distance to the viewpoint or the visual direction. This image processing method has a step for disposing a linear model formed from multiple polygons in a coordinate system of a three dimensional space based on an image processing program stored in a memory, a step for setting a viewpoint in the coordinate system, a step for performing perspective transformation to the model viewed from the viewpoint, and a step for drawing a linear texture having a prescribed dot width in a frame buffer at a coordinate position after the perspective transformation of the model. The linear texture is drawn on the model in a width of minimum dots regardless of the width occupying the coordinates after the perspective transformation of the model.

    摘要翻译: 提供了能够在屏幕上清楚地在场上显示线的图像处理技术,而不管距离视点或视觉方向的距离。 该图像处理方法具有以下步骤:基于存储在存储器中的图像处理程序,在三维空间的坐标系中设置由多个多边形形成的线性模型,在坐标系中设置视点的步骤, 对从视点观察的模型执行透视变换,以及在模型的透视变换之后的坐标位置,在帧缓冲器中绘制具有规定的点宽的线性纹理的步骤。 无论在模型的透视变换之后占据坐标的宽度如何,线性纹理都以最小点的宽度绘制在模型上。

    Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter
    46.
    发明授权
    Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter 有权
    用于半导体器件的测试探针,其制造方法和用于除去异物的部件

    公开(公告)号:US06888344B2

    公开(公告)日:2005-05-03

    申请号:US10285625

    申请日:2002-11-01

    IPC分类号: G01R1/067 G01R3/00 G01R1/04

    摘要: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: θ=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is θ, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.

    摘要翻译: 一种用于半导体器件的测试探针,所述测试探针具有被压靠在半导体器件的测试焊盘上的尖端部分,以建立所述尖端部分和所述焊盘之间的电接触,以测试所述半导体器件的操作,其中形成所述探针 在探针被压靠在衬垫上时,具有相对于探针的尖端面的切线与衬垫表面之间形成有不小于15度的角度的尖端形状, 具有满足以下关系的球面的探针:<?in-line-formula description =“In-line Formulas”end =“lead”?> theta = cos(1-t) / R)> = 15°<?in-line-formula description =“在线公式”end =“tail”?>其中球面的曲率半径为R,垫的厚度为t, 当探针被按压时,形成在相对于探针尖端面的切线与焊盘表面之间的焊盘表面处的角度 衬垫是θ,探针在尖端部分的端部具有平坦部分。 因此,可以在探针跳闸和焊盘之间建立足够的电连续性的接触表面,并且当在探测中调整探针电平时,切割在测量开始之前定位探针所需的时间被切断 降低了测量的变化。

    Waveform observing jig and waveform observing device
    47.
    发明授权
    Waveform observing jig and waveform observing device 失效
    波形观察夹具和波形观察装置

    公开(公告)号:US06441621B2

    公开(公告)日:2002-08-27

    申请号:US09725159

    申请日:2000-11-29

    申请人: Takahiro Nagata

    发明人: Takahiro Nagata

    IPC分类号: G01R3102

    CPC分类号: G01R31/2886 G01R13/00

    摘要: A waveform observing jig for observing a waveform of a signal outputted from a predetermined signal terminal, comprises: a contact for a signal, for contacting with a signal terminal of a board to be observed, and a plurality of contacts for a ground, for contacting with a ground pattern of the board to be observed, wherein at least one contact for a ground is in contact with the ground pattern of the board to be observed when the contact for a signal is in contact with a predetermined signal terminal of the board to be observed.

    摘要翻译: 一种用于观察从预定信号端子输出的信号的波形的波形观察夹具,包括:用于与要观察的板的信号端子接触的信号的接触件和用于接地的多个触点 具有待观察的板的接地图案,其中当信号的触点与板的预定信号端子接触时,用于接地的至少一个触点与要观察的板的接地图案接触, 被观察。