公开(公告)号：US20080247460A1

公开(公告)日：2008-10-09

申请号：US12088480

申请日：2006-10-02

申请人： Jung Won Kang ,  Jae Gon Kim ,  Jin Woo Hong ,  Yong Man Ro ,  Young Suk Kim ,  Cong Thang Trong

发明人： Jung Won Kang ,  Jae Gon Kim ,  Jin Woo Hong ,  Yong Man Ro ,  Young Suk Kim ,  Cong Thang Trong

IPC分类号： H04N7/26

CPC分类号： H04N19/36 ,  H04N19/162 ,  H04N19/164 ,  H04N19/187 ,  H04N19/31 ,  H04N19/34 ,  H04N19/587 ,  H04N19/59 ,  H04N19/61

摘要： An apparatus for and method of adapting a bitstream to which scalable video coding (SVC) technology is applied are provided. The apparatus for adapting a bitstream includes: an Adaptation QoS information extraction unit extracting SVC adaptation operators, and relationships between the SVC adaptation operators and the usage environment information of a terminal from the Adaptation QoS information on the bitstream to which SVC technology is applied; an Adaptation Decision Taking Engine(ADTE) unit determining the SVC adaptation operators corresponding to the usage environment of the terminal receiving the transmitted bitstream among the SVC adaptation operators; and a SVC bitstream extraction unit extracting the bitstream based on the determined SVC adaptation operator. According to the apparatus and method, scalable video can be efficiently provided for changing network environments and multimedia usage environments, through adaptation of scalable video streams using an adaptation operator suggested in Classification Scheme (AQoSJDS).

摘要翻译： 提供了适用于应用可伸缩视频编码（SVC）技术的比特流的装置和方法。 用于适配比特流的装置包括：适应QoS信息提取单元，从应用SVC技术的比特流的适应QoS信息中提取SVC适配运算符，以及SVC适配运算符与终端的使用环境信息之间的关系; 适应决策引擎（ADTE）单元确定与SVC适配运算符中接收所传输的比特流的终端的使用环境相对应的SVC适配运算符; 以及SVC比特率提取单元，基于所确定的SVC适配算子提取比特流。 根据该装置和方法，通过使用分类方案（AQoSJDS）中提出的适配运算符来适应可伸缩视频流，可以有效地提供可变视频来改变网络环境和多媒体使用环境。

公开(公告)号：US20080187671A1

公开(公告)日：2008-08-07

申请号：US12025178

申请日：2008-02-04

申请人： Young Suk Kim ,  Seung Seock Han ,  Chang Taek Hyun ,  Jae Myung Choi

发明人： Young Suk Kim ,  Seung Seock Han ,  Chang Taek Hyun ,  Jae Myung Choi

IPC分类号： B05D1/36

CPC分类号： E04F15/18 ,  E04F15/182

摘要： A method of waterproof and floor construction by using thixotropic urethane and fabric sheet includes the steps of applying a primer on a base concrete surface to form a primer layer; disposing waterproof fiber sheets on the primer layer with an interval in the range of 5 to 10 mm and connecting the intervals with tapes to form a fiber sheet layer; applying thixotropic urethane having viscosity in the range of 900,000 to 1,000,000 CP onto the fiber sheet layer; and spraying super high speed hardening type resin onto the thixotropic urethane to form a coating layer.

摘要翻译： 通过使用触变氨基甲酸酯和织物片的防水和地板施工方法包括将底漆施加在基础混凝土表面上以形成底漆层的步骤; 将防水纤维片材放置在底漆层上，间隔范围为5至10毫米，并将间隔与胶带连接以形成纤维片层; 将具有90万至1,000,000 CP范围内的粘度的触变性氨酯应用于纤维片层; 并将超高速硬化型树脂喷涂到触变性聚氨酯上以形成涂层。

公开(公告)号：US20080023773A1

公开(公告)日：2008-01-31

申请号：US11604694

申请日：2006-11-28

申请人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

发明人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

摘要翻译： 在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。 在第二SiGe混晶层上形成第三p型SiGe混晶层。 从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。 从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。 第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

公开(公告)号：US08547779B2

公开(公告)日：2013-10-01

申请号：US13429117

申请日：2012-03-23

申请人： Kuoyuan Hsu ,  Ming-Chieh Huang ,  Young Suk Kim ,  Subramani Kengeri

发明人： Kuoyuan Hsu ,  Ming-Chieh Huang ,  Young Suk Kim ,  Subramani Kengeri

IPC分类号： G11C8/00 ,  G11C8/18

CPC分类号： G11C7/1042 ,  G11C8/04

摘要： An interleaved memory circuit includes a memory bank including at least one first memory cell for storing a charge representative of a first datum, the first memory cell being coupled with a first word line and a first bit line. The interleaved memory circuit further includes a local control circuit coupled with the memory bank. The interleaved memory circuit further includes a global control circuit coupled with the local control circuit, an interleaving access including a clock signal having a first cycle and a second cycle for accessing the first memory cell, where the second cycle is capable of enabling the local control circuit to trigger a first transition of a first read column select signal RSSL for accessing the first memory cell.

摘要翻译： 交织存储器电路包括一个存储体，该存储体包括至少一个用于存储表示第一数据的电荷的第一存储单元，第一存储单元与第一字线和第一位线耦合。 交错存储器电路还包括与存储体耦合的本地控制电路。 交错存储器电路还包括与本地控制电路耦合的全局控制电路，包括具有用于访问第一存储器单元的第一周期和第二周期的时钟信号的交织访问，其中第二周期能够实现本地控制 触发用于访问第一存储器单元的第一读取列选择信号RSSL的第一转换。

公开(公告)号：US08470551B2

公开(公告)日：2013-06-25

申请号：US12682453

申请日：2007-11-30

申请人： Moon-Hee Sung ,  Chul Joong Kim ,  Haryoung Poo ,  Ji Yeon Kim ,  Young Suk Kim ,  Long Chun Xu

发明人： Moon-Hee Sung ,  Chul Joong Kim ,  Haryoung Poo ,  Ji Yeon Kim ,  Young Suk Kim ,  Long Chun Xu

IPC分类号： C12N15/09 ,  C12N1/21 ,  C12N15/63 ,  C07K1/00

CPC分类号： C07K14/475

摘要： The present invention relates to a fusion protein in which a myostatin mature protein is fused to a multimer of myostatin-derived antigenic peptide Myo-2, a surface expression vector containing a polynucleotide encoding the fusion protein, a recombinant microorganism transformed with the vector, and a feedstuff additive or a pharmaceutical composition containing the microorganism as an effective ingredient. The feedstuff additive or pharmaceutical composition according to the present invention can be used for muscle development and regulation of muscle growth in livestock and poultry, as well as for preventing and treating muscle-wasting diseases and degenerative diseases such as muscular dystrophy, muscular atrophy and the like. In addition, the transformed strain shows the same effect even if the strain itself after culture thereof is directly used, and thus it is very economical.

摘要翻译： 本发明涉及一种融合蛋白，其中肌生成抑制素成熟蛋白质与产生肌生成抑制素的抗原肽Myo-2的多聚体融合，含有编码融合蛋白的多核苷酸的表面表达载体，用载体转化的重组微生物，以及 饲料添加剂或含有该微生物作为有效成分的药物组合物。 根据本发明的饲料添加剂或药物组合物可用于肌肉发育和调节家畜和家禽中的肌肉生长，以及用于预防和治疗肌肉消瘦疾病和退行性疾病如肌营养不良症，肌肉萎缩症和 喜欢。 此外，即使直接使用其培养后的菌株本身，转化菌株也显示相同的效果，因此是非常经济的。

公开(公告)号：US08278177B2

公开(公告)日：2012-10-02

申请号：US13240303

申请日：2011-09-22

申请人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

发明人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

摘要翻译： 在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。 在第二SiGe混晶层上形成第三p型SiGe混晶层。 从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。 从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。 第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

公开(公告)号：US20120118024A1

公开(公告)日：2012-05-17

申请号：US13319167

申请日：2010-05-28

申请人： Ig Geun Kwon ,  Young Suk Kim ,  Hyun Seok Seo ,  Min Gyu Jo

发明人： Ig Geun Kwon ,  Young Suk Kim ,  Hyun Seok Seo ,  Min Gyu Jo

IPC分类号： D06F37/20 ,  D06F21/00

CPC分类号： D06F37/20 ,  D06F37/22 ,  D06F37/268 ,  D06F37/269 ,  F16F1/3732 ,  F16F1/38

摘要： The present invention relates to a laundry machine having a structure of suspension assembly, which buffers the vibration and supports the drum. The supporting suspension assembly includes at least three suspensions (500, 510, 520) arranged in a triangle. The spring constant of the rear suspension (500) can be smaller than the spring constant of the front suspensions (510, 520).

摘要翻译： 本发明涉及具有悬挂组件结构的洗衣机，其缓冲振动并支撑滚筒。 支撑悬架组件包括布置成三角形的至少三个悬架（500,510,520）。 后悬架（500）的弹簧常数可以小于前悬架（510,520）的弹簧常数。

公开(公告)号：US20120104912A1

公开(公告)日：2012-05-03

申请号：US13143032

申请日：2009-12-29

申请人： Jung Tae Song ,  Hyun Seok Seo ,  Soo Bong Kim ,  Ig Geun Kwon ,  Young Suk Kim ,  Hee Tae Lim ,  Min Gyu Jo

发明人： Jung Tae Song ,  Hyun Seok Seo ,  Soo Bong Kim ,  Ig Geun Kwon ,  Young Suk Kim ,  Hee Tae Lim ,  Min Gyu Jo

IPC分类号： D06F37/26

CPC分类号： D06F37/20 ,  D06F37/22

摘要： Disclosed is a laundry machine which treats laundry. A hearing housing (400) and suspensions (520, 510, 500) are separated from each other in the radial direction of a rotary shaft (351) as well as in the axial direction of the rotary shaft (351). A suspension unit includes radial brackets (431, 430) extended in the radial direction, and axial brackets (450, 440) extended in the axial direction.

摘要翻译： 公开了一种处理衣物的洗衣机。 听筒壳体（400）和悬架（520,510,500）沿着旋转轴（351）的径向方向和旋转轴（351）的轴向彼此分离。 悬架单元包括在径向方向上延伸的径向支架（431,430）和沿轴向方向延伸的轴向托架（450,440）。

公开(公告)号：US08159862B2

公开(公告)日：2012-04-17

申请号：US12843366

申请日：2010-07-26

申请人： Young Seog Kim ,  Kuoyuan (Peter) Hsu ,  Derek C. Tao ,  Young Suk Kim

发明人： Young Seog Kim ,  Kuoyuan (Peter) Hsu ,  Derek C. Tao ,  Young Suk Kim

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C5/14

CPC分类号： G11C11/412

摘要： A circuit includes a first node; a second node; a first PMOS transistor having a source coupled to the first node, a drain coupled to a first control transistor, and a gate driven by a first voltage; and a first NMOS transistor having a source coupled to the second node, a drain coupled to the first control transistor, and a gate driven by a second voltage. The first PMOS transistor is configured to automatically turn off based on the first voltage and a first node voltage at the first node. The first NMOS transistor is configured to automatically turn off based on the second voltage and a second node voltage at the second node. When the first PMOS transistor, the control transistor, and the first NMOS transistor are on, the first node voltage is lowered while the second voltage is raised.

摘要翻译： 电路包括第一节点; 第二个节点; 具有耦合到第一节点的源极的第一PMOS晶体管，耦合到第一控制晶体管的漏极和由第一电压驱动的栅极; 以及第一NMOS晶体管，其具有耦合到第二节点的源极，耦合到第一控制晶体管的漏极和由第二电压驱动的栅极。 第一PMOS晶体管被配置为基于第一节点处的第一电压和第一节点电压自动关闭。 第一NMOS晶体管被配置为基于第二节点处的第二电压和第二节点电压自动关闭。 当第一PMOS晶体管，控制晶体管和第一NMOS晶体管导通时，第一节点电压降低，而第二电压升高。

公开(公告)号：US07807524B2

公开(公告)日：2010-10-05

申请号：US12434944

申请日：2009-05-04

申请人： Young Suk Kim ,  Yosuke Shimamune

发明人： Young Suk Kim ,  Yosuke Shimamune

IPC分类号： H01L21/8238

摘要： A semiconductor device has: a semiconductor substrate made of a first semiconductor material; an n-channel field effect transistor formed in the semiconductor substrate and having n-type source/drain regions made of a second semiconductor material different from the first semiconductor material; and a p-channel field effect transistor formed in the semiconductor substrate and having p-type source/drain regions made of a third semiconductor material different from the first semiconductor material, wherein the second and third semiconductor materials are different materials. The semiconductor device having n- and p-channel transistors has improved performance by utilizing stress.