公开(公告)号：US09236280B2

公开(公告)日：2016-01-12

申请号：US13301936

申请日：2011-11-22

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

IPC分类号： B08B3/04 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。

公开(公告)号：US08577502B2

公开(公告)日：2013-11-05

申请号：US11907518

申请日：2007-10-12

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

IPC分类号： G05B21/00 ,  G01N21/00 ,  G01N35/02

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： A processing apparatus is provided for enhancing throughput in the manufacture of semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. A position of an object to be processed is controlled, such that a distance between the surface position of a rinsing liquid upon the rinsing process and a top end position of the object to be processed becomes shorter than a distance between the surface position of a chemical liquid upon a chemical liquid process and the top end position of the object to be processed. Alternatively, the position of the object to be processed is controlled, such that the distance between the surface position of the rinsing liquid upon the rinsing process and the top end position of the object to be processed becomes shorter than a distance between the bottom face position of the rinsing liquid and a bottom end position of the object to be processed.

摘要翻译： 提供了一种处理装置，用于通过减少进行漂洗处理所需的时间来增加制造半导体晶片和/或液晶基板的生产量。 控制待处理物体的位置，使得漂洗过程中的冲洗液体的表面位置与待处理物体的顶端位置之间的距离短于化学品的表面位置之间的距离 液体在化学液体处理和被处理物体的顶端位置。 或者，控制被处理物的位置，使得冲洗处理时的冲洗液的表面位置与待处理物体的上端位置之间的距离比底面位置 的冲洗液体和待处理物体的底端位置。

公开(公告)号：US20090078287A1

公开(公告)日：2009-03-26

申请号：US12232458

申请日：2008-09-17

申请人： Yuji Kamikawa ,  Shigenori Kitahara

发明人： Yuji Kamikawa ,  Shigenori Kitahara

IPC分类号： B08B3/08 ,  B08B13/00

CPC分类号： H01L21/67023 ,  B08B3/00 ,  G01N27/10

摘要： A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected. An additional chemical-liquid supply part 1, which is configured to supply an additional chemical liquid different from the chemical liquid through an additional chemical-liquid supply path 3, is connected to the supply path at a position downstream a measuring point 10a on which the measuring part 10 is disposed.

摘要翻译： 一种液体处理设备，包括：处理部分80，被配置为处理由处理液体处理的物体; 连接到处理部80的供给路径1，供给路径1构成为将处理液引导到处理部80; 配置成向供给路径1供给溶剂的溶剂供给部7; 以及药液供给部5，其经由药液供给路径向供给路径1供给化学液，以生成用溶剂稀释的药液。 被配置为测量用溶剂稀释的化学液体的电导率的测量部件10设置在供给路径中，在药液供给路径6所在的连接点25a，35a，45a的下游位置 连接的。 配置为通过附加的药液供给路径3供给与药液不同的附加的药液的附加的药液供给部1在测量点10a的下游的位置与供给路径连接， 设置测量部10。

公开(公告)号：US20070204885A1

公开(公告)日：2007-09-06

申请号：US11706557

申请日：2007-02-13

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： B08B3/00

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US20070006483A1

公开(公告)日：2007-01-11

申请号：US11472415

申请日：2006-06-22

申请人： Yuji Kamikawa ,  Kazuhiko Kobayashi ,  Nobutaka Kuroda ,  Mikio Nakashima ,  Osamu Tsuda

发明人： Yuji Kamikawa ,  Kazuhiko Kobayashi ,  Nobutaka Kuroda ,  Mikio Nakashima ,  Osamu Tsuda

IPC分类号： F26B21/06 ,  B01J23/00 ,  F26B3/00

CPC分类号： H01L21/67051 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22. First, N2 gas is supplied to the two-fluid nozzle 3 while IPA from the IPA supply source 8 is supplied to the two-fluid nozzle 3 so as to produce the mixed fluid, followed by supplying it to the processing chamber 1a so as to perform a first drying step. Subsequently, N2 gas from the N2 gas supply source 5 is supplied to the processing chamber 1a through the two-fluid nozzle 3 and the branch line 25 so as to perform a second drying step.

摘要翻译： 蒸气干燥装置包括适于容纳半导体晶片W的处理室1a; 供应喷嘴2，其适于将IPA蒸汽或N 2气体供应到处理室1a中; 连接到IPA供应源8和N 2气体供应源5两者并且适于产生IPA和N 2气体的混合流体的双流体喷嘴3; 蒸汽发生装置10，适于通过加热由双流体喷嘴3产生的混合流体产生IPA蒸气; 连接到双流体喷嘴3的上游侧的N 2气体供给管线23; 以及连接到双流体喷嘴3的下游侧的混合流体供给管线22。 在连接N2气体供给管线23和混合流体供给管线22的分支管路25上设置开闭阀V 2。 首先，向双流体喷嘴3供给N 2气体，同时将来自IPA供给源8的IPA供给至双液喷嘴3，生成混合流体，然后将其供给到处理室1a， 以执行第一干燥步骤。 随后，通过双流体喷嘴3和分支管线25将来自N 2气体供给源5的N 2气体供给至处理室1a，进行第二干燥工序。

公开(公告)号：US06895979B2

公开(公告)日：2005-05-24

申请号：US10359208

申请日：2003-02-06

申请人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

发明人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  H01L21/00

CPC分类号： H01L21/67086 ,  B08B3/02 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  Y10S134/902

摘要： A processing apparatus essentially includes a rotatable rotor 21 for carrying semiconductor wafers W, a motor 22 for driving to rotate the rotor 21, a plurality of processing chambers for surrounding the wafers W carried by the rotor 21, for example, an inner chamber 23 and an outer chamber 24, a chemical supplying unit 50, an IPA supplying unit 60, a rinse supplying unit 70 and a drying fluid supplying unit 80. With this constitution of the apparatus, it is possible to prevent the wafers from being contaminated due to the reaction of treatment liquids of different kinds, with the improvement of processing efficiency and miniaturization of the apparatus.

摘要翻译： 一种处理装置主要包括用于承载半导体晶片W的可旋转转子21，用于驱动转子21旋转的电动机22，用于围绕由转子21承载的晶片W的多个处理室，例如内室23和 外部室24，化学品供应单元50，IPA供应单元60，漂洗供应单元70和干燥流体供应单元80.通过该设备的这种结构，可以防止晶片被 不同种类的处理液的反应，提高了加工效率和设备的小型化。

公开(公告)号：US20050011537A1

公开(公告)日：2005-01-20

申请号：US10606135

申请日：2003-06-25

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： H01L21/304 ,  G03F7/42 ,  H01L21/311 ,  F23J1/00 ,  B08B3/10

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US06725868B2

公开(公告)日：2004-04-27

申请号：US09987369

申请日：2001-11-14

申请人： Yuji Kamikawa ,  Koji Egashira

发明人： Yuji Kamikawa ,  Koji Egashira

IPC分类号： B08B302

CPC分类号： H01L21/67051 ,  B08B3/02 ,  Y10S134/902

摘要： A cleaning processing apparatus, which is one embodiment of a liquid processing apparatus for performing a liquid processing by supplying a predetermined process liquid to a target object to be processed such as a semiconductor wafer while rotating the target object, comprises a rotor for holding wafers W, a slidable process section for housing the rotor, and a cleaning liquid spurting nozzle for supplying a predetermined cleaning liquid to the wafers W. A housing for housing the slidable process section is of a hermetic structure so as to be substantially shielded from the outside.

摘要翻译： 一种清洁处理装置，其是通过在旋转目标物体的同时向诸如半导体晶片的目标被处理物体提供预定处理液来进行液体处理的一个实施例，包括用于保持晶片W的转子 ，用于容纳转子的可滑动工艺部分和用于将预定清洁液体供应到晶片W的清洗液喷射喷嘴。用于容纳可滑动处理部分的壳体是密封结构，以便基本上与外部隔绝。

公开(公告)号：US06708702B2

公开(公告)日：2004-03-23

申请号：US09729227

申请日：2000-12-05

申请人： Yuji Kamikawa

发明人： Yuji Kamikawa

IPC分类号： B08B300

CPC分类号： H01L21/67051 ,  Y10S134/902

摘要： There is provided a liquid processing apparatus for carrying out a process, such as cleaning, with a chemical serving as a processing liquid, with respect to a semiconductor wafer (W) which serves as an object to be processed and which is housed in a processing chamber. A chemical tank (10) for storing therein the chemical has a double vessel structure which has an external tank (2) and an internal tank (1) housed in the external tank (2). Supply pipe-lines (14a, 14b and 14c) are provided for supplying the chemical from the external tank (2) and the internal tank (1) to the processing chamber. A return pipe-line (56) is provided for returning the chemical from the processing chamber to the external tank (2). The outer periphery of the external tank (2) is surrounded by a heater (4).

摘要翻译： 提供了一种液体处理装置，用于相对于用作待处理对象的半导体晶片（W），以处理液体的形式进行处理，例如清洁，并且以处理液体的形式进行处理 房间。 用于在其中存储化学品的化学罐（10）具有双容器结构，其具有容纳在外部容器（2）中的外部容器（2）和内部容器（1）。 供应管线（14a，14b和14c）用于将化学品从外部罐（2）和内部罐（1）供应到处理室。 返回管线（56）用于将化学品从处理室返回到外部罐（2）。 外部罐（2）的外周被加热器（4）包围。

公开(公告)号：US06647642B2

公开(公告)日：2003-11-18

申请号：US10014604

申请日：2001-12-14

申请人： Yuji Kamikawa ,  Taichi Sakaguchi

发明人： Yuji Kamikawa ,  Taichi Sakaguchi

IPC分类号： F26B300

CPC分类号： H01L21/67051

摘要： A cleaning processing apparatus and method of wafers W held by a rotor capable of holding a plurality of wafers W, which is one embodiment of the liquid processing apparatus of the present invention, comprises an outside chamber, an inside chamber arranged slidable between a process position and a retreat position, and a cleaning mechanism for cleaning the inside chamber in the retreat position. The cleaning mechanism includes a cylindrical body arranged in the inside chamber so as to form a substantially cylindrical cleaning processing space between the inside chamber and the cylindrical body, a cleaning liquid spurting nozzle for spurting a cleaning liquid into the cleaning processing space, and a gas supply nozzle for supplying a predetermined drying gas into the cleaning processing space so as to make it possible to clean and dry the inside chamber.

摘要翻译： 由本发明的液体处理装置的一个实施例的由能够保持多个晶片W的转子保持的晶片W的清洁处理装置和方法包括：外部室，内部室，其可以在处理位置 和退避位置，以及用于清洁处于退避位置的内部室的清洁机构。 清洁机构包括：设置在内部室中的圆柱体，以在内部室和圆筒体之间形成基本上圆柱形的清洁处理空间，用于将清洗液喷射到清洁处理空间中的清洗液喷射喷嘴，以及气体 供给喷嘴，用于将预定的干燥气体供应到清洁处理空间中，以便能够清洁和干燥内部室。