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1.发明授权Substrate processing apparatus, substrate processing method, and storage medium 有权基板处理装置，基板处理方法和存储介质公开(公告)号：US09236280B2
公开(公告)日：2016-01-12
申请号：US13301936
申请日：2011-11-22
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/02101 , H01L21/67017 , H01L21/6719
摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。
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2.发明申请Substrate Processing Apparatus, Substrate Processing Method, and Storage Medium 有权基板处理装置，基板处理方法和存储介质公开(公告)号：US20120132230A1
公开(公告)日：2012-05-31
申请号：US13301936
申请日：2011-11-22
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/02101 , H01L21/67017 , H01L21/6719
摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.
摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。
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公开(公告)号：US07593625B2
公开(公告)日：2009-09-22
申请号：US11481253
申请日：2006-07-06
申请人： Yuji Kamikawa , Mikio Nakashima , Osamu Tsuda
发明人： Yuji Kamikawa , Mikio Nakashima , Osamu Tsuda
CPC分类号： F24H1/101 , F24H1/162 , F28F2245/06
摘要： Disclosed is a fluid heating apparatus including a halogen lamp 23, and a tubular structure 26 surrounding the heating lamp and having a fluid inlet 24 and a fluid outlet 25. The tubular structure 26 comprises plural straight pipes 26a arrayed circumferentially around the halogen lamp 26, with adjacent straight pipes 26a being in contact with each other, or being slightly spaced from each other. At least the surfaces, facing the halogen lamp 26, of the straight pipes 26a are coated with a black paint 27, or a radiant-light-absorbing paint.
摘要翻译： 公开了一种包括卤素灯23和围绕加热灯并具有流体入口24和流体出口25的管状结构26的流体加热装置。管状结构26包括沿卤素灯26周向排列的多个直管26a， 相邻的直管26a彼此接触或者彼此稍微间隔开。 直管26a的至少面对卤素灯26的表面涂覆有黑色漆27或辐射光吸收涂料。
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公开(公告)号：US20070017502A1
公开(公告)日：2007-01-25
申请号：US11481253
申请日：2006-07-06
申请人： Yuji Kamikawa , Mikio Nakashima , Osamu Tsuda
发明人： Yuji Kamikawa , Mikio Nakashima , Osamu Tsuda
CPC分类号： F24H1/101 , F24H1/162 , F28F2245/06
摘要： Disclosed is a fluid heating apparatus including a halogen lamp 23, and a tubular structure 26 surrounding the heating lamp and having a fluid inlet 24 and a fluid outlet 25. The tubular structure 26 comprises plural straight pipes 26a arrayed circumferentially around the halogen lamp 26, with adjacent straight pipes 26a being in contact with each other, or being slightly spaced from each other. At least the surfaces, facing the halogen lamp 26, of the straight pipes 26a are coated with a black paint 27, or a radiant-light-absorbing paint.
摘要翻译： 公开了一种流体加热装置，其包括卤素灯23和围绕加热灯并具有流体入口24和流体出口25的管状结构26。 管状结构26包括围绕卤素灯26周向排列的多个直管26a，相邻的直管26a彼此接触或彼此稍微间隔开。 直管26a的至少面向卤素灯26的表面涂覆有黑色漆27或辐射光吸收涂料。
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5.发明申请公开(公告)号：US20070006483A1
公开(公告)日：2007-01-11
申请号：US11472415
申请日：2006-06-22
CPC分类号： H01L21/67051 , H01L21/67023 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22. First, N2 gas is supplied to the two-fluid nozzle 3 while IPA from the IPA supply source 8 is supplied to the two-fluid nozzle 3 so as to produce the mixed fluid, followed by supplying it to the processing chamber 1a so as to perform a first drying step. Subsequently, N2 gas from the N2 gas supply source 5 is supplied to the processing chamber 1a through the two-fluid nozzle 3 and the branch line 25 so as to perform a second drying step.
摘要翻译： 蒸气干燥装置包括适于容纳半导体晶片W的处理室1a; 供应喷嘴2，其适于将IPA蒸汽或N 2气体供应到处理室1a中; 连接到IPA供应源8和N 2气体供应源5两者并且适于产生IPA和N 2气体的混合流体的双流体喷嘴3; 蒸汽发生装置10，适于通过加热由双流体喷嘴3产生的混合流体产生IPA蒸气; 连接到双流体喷嘴3的上游侧的N 2气体供给管线23; 以及连接到双流体喷嘴3的下游侧的混合流体供给管线22。 在连接N2气体供给管线23和混合流体供给管线22的分支管路25上设置开闭阀V 2。 首先，向双流体喷嘴3供给N 2气体，同时将来自IPA供给源8的IPA供给至双液喷嘴3，生成混合流体，然后将其供给到处理室1a， 以执行第一干燥步骤。 随后，通过双流体喷嘴3和分支管线25将来自N 2气体供给源5的N 2气体供给至处理室1a，进行第二干燥工序。
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公开(公告)号：US08567089B2
公开(公告)日：2013-10-29
申请号：US13597314
申请日：2012-08-29
申请人： Mikio Nakashima , Yuji Kamikawa
发明人： Mikio Nakashima , Yuji Kamikawa
摘要： Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.
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公开(公告)号：US08281498B2
公开(公告)日：2012-10-09
申请号：US12553161
申请日：2009-09-03
申请人： Mikio Nakashima , Yuji Kamikawa
发明人： Mikio Nakashima , Yuji Kamikawa
摘要： Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.
摘要翻译： 公开了一种蒸发器，蒸发方法和基板处理装置，其可以增加有机溶剂的产生蒸气的浓度并有效地加热有机溶剂。 蒸发器包括流体管，用于将有机溶剂液体供给到流体管的一端的液体有机溶剂供给装置，以及用于加热流体管的加热单元。 流体管具有从一端到另一端增加的横截面。 当提供给流体管的一端的有机溶剂液体被加热时，有机溶剂蒸气从流体管的另一端排出。 基板处理装置包括上述蒸发器。
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8.发明授权公开(公告)号：US07637029B2
公开(公告)日：2009-12-29
申请号：US11472415
申请日：2006-06-22
IPC分类号： F26B19/00
CPC分类号： H01L21/67051 , H01L21/67023 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22. First, N2 gas is supplied to the two-fluid nozzle 3 while IPA from the IPA supply source 8 is supplied to the two-fluid nozzle 3 so as to produce the mixed fluid, followed by supplying it to the processing chamber 1a so as to perform a first drying step. Subsequently, N2 gas from the N2 gas supply source 5 is supplied to the processing chamber 1a through the two-fluid nozzle 3 and the branch line 25 so as to perform a second drying step.
摘要翻译： 蒸气干燥装置包括适于容纳半导体晶片W的处理室1a; 供应喷嘴2，其适于将IPA蒸汽或N 2气体供应到处理室1a中; 连接到IPA供应源8和N 2气体供应源5两者并且适于产生IPA和N 2气体的混合流体的双流体喷嘴3; 蒸汽发生装置10，适于通过加热由双流体喷嘴3产生的混合流体产生IPA蒸气; 连接到双流体喷嘴3的上游侧的N 2气体供给管线23; 以及连接到双流体喷嘴3的下游侧的混合流体供给管线22.开关阀V2设置在连接N2气体供给管线23和混合流体供给管线22的分支管线25上。 首先，向双流体喷嘴3供给N2气体，同时将来自IPA供给源8的IPA供给至双流体喷嘴3，生成混合流体，然后将其供给到处理室1a， 执行第一干燥步骤。 接着，将来自N2气体供给源5的N2气通过双流体喷嘴3和分支管线25供给到处理室1a，进行第二干燥工序。
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公开(公告)号：US09598320B2
公开(公告)日：2017-03-21
申请号：US14110734
申请日：2012-04-19
申请人： Naomichi Hori , Mikio Nakashima
发明人： Naomichi Hori , Mikio Nakashima
CPC分类号： C04B35/50 , C01G23/005 , C01G25/006 , F27B7/20 , F27B7/28 , F27D1/0006
摘要： Provided is a method of producing a composite metal oxide including, to calcine a composition containing an alkali metal and obtain a composite metal oxide, calcining the composition while being arranged on a mount a part of which in contact with the composition is formed of a metal oxide component. The metal oxide component has a content of K atoms ranging from 5 to 13 parts by weight in terms of K2O with respect to 100 parts by weight of the metal oxide component, and a total content of Al atoms, Zr atoms, Mg atoms, and Ce atoms ranging from 15 to 70 parts by weight in terms of oxides with respect to 100 parts by weight of the metal oxide component. The present invention thus provides a method of producing a composite metal oxide containing an alkali metal with reduced production costs.
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公开(公告)号：US08266820B2
公开(公告)日：2012-09-18
申请号：US13209741
申请日：2011-08-15
申请人： Hideki Nishimura , Mikio Nakashima
发明人： Hideki Nishimura , Mikio Nakashima
IPC分类号： F26B3/00
CPC分类号： H01L21/67109 , H01L21/02052 , H01L21/67034 , H01L21/67248
摘要： A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.
摘要翻译： 提供了可以减少要留在每个基板上的颗粒数量的基板处理方法。 在基板处理方法中，通过使用由具有一个或多个加热机构的加热装置加热的流体来干燥待加工的基板W. 基板处理方法包括：第一步骤，将含有气体和处理液体的混合流体供给并被加热装置加热到其中放置待处理基板的处理室中;以及第二步骤， 进入处理室。 至少一个加热机构的输出在第一步骤开始之后的预定时间过去的一段时间内保持在预设的恒定值。 在第二步骤中，在反馈控制下确定加热机构的输出。
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