公开(公告)号：US20080097647A1

公开(公告)日：2008-04-24

申请号：US11907518

申请日：2007-10-12

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

IPC分类号： G06F19/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： The feature of the present invention is to enhance the throughput of manufacturing semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. In this invention, the position of an object to be processed is controlled, such that a distance (L1) between the surface position (LV1) of a rinsing liquid upon the rinsing process and a top end position (LV2) of the object to be processed (wafers 2) becomes shorter than a distance (L2) between the surface position (LV3) of a chemical liquid upon a chemical liquid process and the top end position (LV4) of the object to be processed (wafers 2). Alternatively, the position of the object to be processed is controlled, such that the distance (L1) between the surface position (LV1) of the rinsing liquid upon the rinsing process and the top end position (LV2) of the object to be processed (wafers 2) becomes shorter than a distance (L3) between the bottom face position (LV5) of the rinsing liquid and a bottom end position (LV6) of the object to be processed (wafers 2).

摘要翻译： 本发明的特征是通过减少进行漂洗处理所需的时间来提高制造半导体晶片和/或液晶基板的生产量。 在本发明中，对被处理物的位置进行控制，使得漂洗处理后的冲洗液的表面位置（LV1）与上述漂洗液的顶端位置（LV2）之间的距离（L 1） 待处理对象（晶片2）变得短于化学液体处理时的化学液体的表面位置（LV 3）与待处理物体的顶端位置（LV 4）之间的距离（L 2） 晶圆2）。 或者，控制待处理对象的位置，使得漂洗过程中的冲洗液体的表面位置（LV 1）与物体的顶端位置（LV2）之间的距离（L 1）与 （晶片2）变得比漂洗液体的底面位置（LV5）和待处理物体（晶片2）的底端位置（LV6）之间的距离（L 3）短。

公开(公告)号：US08577502B2

公开(公告)日：2013-11-05

申请号：US11907518

申请日：2007-10-12

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Yuji Kamikawa

IPC分类号： G05B21/00 ,  G01N21/00 ,  G01N35/02

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： A processing apparatus is provided for enhancing throughput in the manufacture of semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. A position of an object to be processed is controlled, such that a distance between the surface position of a rinsing liquid upon the rinsing process and a top end position of the object to be processed becomes shorter than a distance between the surface position of a chemical liquid upon a chemical liquid process and the top end position of the object to be processed. Alternatively, the position of the object to be processed is controlled, such that the distance between the surface position of the rinsing liquid upon the rinsing process and the top end position of the object to be processed becomes shorter than a distance between the bottom face position of the rinsing liquid and a bottom end position of the object to be processed.

摘要翻译： 提供了一种处理装置，用于通过减少进行漂洗处理所需的时间来增加制造半导体晶片和/或液晶基板的生产量。 控制待处理物体的位置，使得漂洗过程中的冲洗液体的表面位置与待处理物体的顶端位置之间的距离短于化学品的表面位置之间的距离 液体在化学液体处理和被处理物体的顶端位置。 或者，控制被处理物的位置，使得冲洗处理时的冲洗液的表面位置与待处理物体的上端位置之间的距离比底面位置 的冲洗液体和待处理物体的底端位置。

公开(公告)号：US08778092B2

公开(公告)日：2014-07-15

申请号：US13042645

申请日：2011-03-08

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

IPC分类号： B08B3/04 ,  B08B5/02 ,  F26B5/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution.

摘要翻译： 提供了一种基板处理方法，包括通过在将清洁溶液供应到清洗槽的同时将基板浸入清洁溶液中而沿纵向清洗基板; 将从所述清洗槽拾取的所述基板沿长度方向保持所述基板; 以及通过交替地供给包含用于除去液体的溶剂的蒸气的第一干燥气体和第二干燥气体来干燥所述干燥室中与所述清洗槽的上部区域连通的基板，而不将所述溶剂的蒸气除去以除去所述液体 从清洗液的液面取出基板在清洗槽的上部区域与清洗后的基板的上端之间的干燥室之间露出的区域。

公开(公告)号：US20110220153A1

公开(公告)日：2011-09-15

申请号：US13042645

申请日：2011-03-08

申请人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

发明人： Hiroshi Tanaka ,  Hironobu Hyakutake ,  Takashi Uno

IPC分类号： B08B3/00

CPC分类号： H01L21/67057 ,  H01L21/67028

摘要： There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution.

摘要翻译： 提供了一种基板处理方法，包括通过在将清洁溶液供应到清洗槽的同时将基板浸入清洁溶液中而沿纵向清洗基板; 将从所述清洗槽拾取的所述基板沿长度方向保持所述基板; 以及通过交替地供给包含用于除去液体的溶剂的蒸气的第一干燥气体和第二干燥气体来干燥所述干燥室中与所述清洗槽的上部区域连通的基板，而不将所述溶剂的蒸气除去以除去所述液体 从清洗液的液面取出基板在清洗槽的上部区域与清洗后的基板的上端之间的干燥室之间露出的区域。

公开(公告)号：US06241827B1

公开(公告)日：2001-06-05

申请号：US09250457

申请日：1999-02-16

申请人： Hiroshi Tanaka ,  Shinichiro Shimomura ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Shinichiro Shimomura ,  Yuji Kamikawa

IPC分类号： B08B304

CPC分类号： B08B3/102 ,  Y10S134/902

摘要： Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

摘要翻译： 将晶片（W）浸渍在清洗槽（20）中所含的清洗液（L）中。 清洗液（L）被供​​给至清洗槽（20），以使清洗液（L）溢出清洗槽（20）。 清洗槽（20）溢出的清洗液（L）被过滤，循环并返回清洗槽（20）。 电动波纹管泵（30）通过吸管（51）连接到清洗槽（20）。 用于计数由电动波纹管泵（30）取样的清洗液（L）的样品中所含的微粒的粒子计数器（5）被放置在吸入管（51）上，并与电机 - 操作波纹管泵（30）。

公开(公告)号：US5488964A

公开(公告)日：1996-02-06

申请号：US880068

申请日：1992-05-07

申请人： Shinya Murakami ,  Yuji Kamikawa ,  Sinichiro Izumi ,  Noriyuki Anai ,  Takami Satoh ,  Hirofumi Shiraishi ,  Koji Harada ,  Takayuki Tomoeda ,  Hiroshi Tanaka

发明人： Shinya Murakami ,  Yuji Kamikawa ,  Sinichiro Izumi ,  Noriyuki Anai ,  Takami Satoh ,  Hirofumi Shiraishi ,  Koji Harada ,  Takayuki Tomoeda ,  Hiroshi Tanaka

IPC分类号： B08B3/02 ,  B08B3/04 ,  B08B3/10 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67754 ,  B08B3/02 ,  B08B3/04 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67757 ,  Y10S134/902

摘要： Disclosed herein is a washing apparatus comprising a washing chamber, an opening/closing mechanism, and a nozzle. The chamber has an opening and is designed for washing the objects transported from outside through the opening. The opening/closing mechanism is designed to open and close the opening of the washing chamber. The nozzle is used to wash the opening/closing mechanism. The apparatus further comprises a washing vessel filled with a washing liquid, for washing the objects, and also a nozzle for applying a washing liquid to the objects located in the washing vessel when the objects are partly exposed as the washing liquid is discharged from the washing vessel.

公开(公告)号：US06589359B2

公开(公告)日：2003-07-08

申请号：US09927447

申请日：2001-07-10

申请人： Yuji Kamikawa ,  Hiroshi Tanaka

发明人： Yuji Kamikawa ,  Hiroshi Tanaka

IPC分类号： B08B300

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B2230/01 ,  Y10S134/902

摘要： A cleaning method is provided for cleaning a semiconductor wafer. In this method, after removing adhering substances from the wafer by using a chemical liquid of organic amine type, there is carried out a pure-water cleaning capable of prevention of electrostatic destruction and alkaline corrosion on the wafer. In detail, it is executed to make a processing chamber have an atmosphere of carbon dioxide and subsequently introduce steam into the chamber to dissolve CO2-gas into the steam. Next, spray the pure water to the wafer. Then, the steam in which CO2-gas is dissolved dissolves in the pure water, so that the pure wafer becomes weak acid, accomplishing the reduction of resistivity of the pure water. Additionally, alkaline substances is neutralized by carbonated water to prevent an alkaline corrosion on a wiring layer on the wafer's surface.

公开(公告)号：US06357458B2

公开(公告)日：2002-03-19

申请号：US09833000

申请日：2001-04-11

申请人： Hiroshi Tanaka ,  Shinichiro Shimomura ,  Yuji Kamikawa

发明人： Hiroshi Tanaka ,  Shinichiro Shimomura ,  Yuji Kamikawa

IPC分类号： B08B304

CPC分类号： B08B3/102 ,  Y10S134/902

摘要： Wafers (W) is immersed in a cleaning liquid (L) contained in a cleaning tank (20). The cleaning liquid (L) is supplied into the cleaning tank (20) so that the cleaning liquid (L) overflows the cleaning tank (20). The cleaning liquid (L) overflowed the cleaning tank (20) is filtered, circulated and returned into the cleaning tank (20). A motor-operated bellows pump (30) is connected by a suction pipe (51) to the cleaning tank (20). A particle counter (5) for counting particles contained in a sample of the cleaning liquid (L) sampled by the motor-operated bellows pump (30) is placed on the suction pipe (51) and connected to the suction side of the motor-operated bellows pump (30).

摘要翻译： 将晶片（W）浸渍在清洗槽（20）中所含的清洗液（L）中。 清洗液（L）被供​​给至清洗槽（20），以使清洗液（L）溢出清洗槽（20）。 清洗槽（20）溢出的清洗液（L）被过滤，循环并返回清洗槽（20）。 电动波纹管泵（30）通过吸管（51）连接到清洗槽（20）。 用于计数由电动波纹管泵（30）取样的清洗液（L）的样品中所含的微粒的粒子计数器（5）被放置在吸入管（51）上，并与电机 - 操作波纹管泵（30）。

公开(公告)号：US09773597B2

公开(公告)日：2017-09-26

申请号：US13979988

申请日：2012-02-22

申请人： Hiroaki Ikeda ,  Hiroshi Tanaka ,  Kazunori Igarashi

发明人： Hiroaki Ikeda ,  Hiroshi Tanaka ,  Kazunori Igarashi

IPC分类号： H01F1/24 ,  H01F41/02 ,  B22F1/02 ,  B22F3/16 ,  C22C33/02 ,  C22C38/02 ,  H01F3/08 ,  H01F27/255 ,  H01F1/26 ,  H01F1/33

CPC分类号： H01F1/24 ,  B22F1/02 ,  B22F1/025 ,  B22F3/16 ,  B22F3/24 ,  B22F2998/10 ,  B22F2999/00 ,  C22C33/0214 ,  C22C33/0278 ,  C22C38/02 ,  C22C2202/02 ,  H01F1/26 ,  H01F1/33 ,  H01F3/08 ,  H01F27/255 ,  H01F41/0246 ,  B22F3/02 ,  B22F2003/248 ,  B22F2201/02 ,  B22F2201/20

摘要： A composite soft magnetic material having low magnetostriction and high magnetic flux density contains: pure iron-based composite soft magnetic powder particles that are subjected to an insulating treatment by a Mg-containing insulating film or a phosphate film; and Fe—Si alloy powder particles including 11%-16% by mass of Si. A ratio of an amount of the Fe—Si alloy powder particles to a total amount is in a range of 10%-60% by mass. A method for producing the composite soft magnetic material comprises the steps of: mixing a pure iron-based composite soft magnetic powder, and the Fe—Si alloy powder in such a manner that a ratio of the Fe—Si alloy powder to a total amount is in a range of 10%-60%; subjecting a resultant mixture to compression molding; and subjecting a resultant molded body to a baking treatment in a non-oxidizing atmosphere.

公开(公告)号：US09399189B2

公开(公告)日：2016-07-26

申请号：US14004708

申请日：2012-04-11

申请人： Tatsuya Tsujiuchi ,  Hiroshi Tanaka ,  Hiromitsu Nagayasu ,  Takuya Hirata ,  Tsuyoshi Oishi ,  Masahiko Tatsumi ,  Koji Kadono

发明人： Tatsuya Tsujiuchi ,  Hiroshi Tanaka ,  Hiromitsu Nagayasu ,  Takuya Hirata ,  Tsuyoshi Oishi ,  Masahiko Tatsumi ,  Koji Kadono

IPC分类号： B01D53/14

CPC分类号： B01D53/1425 ,  B01D53/1406 ,  B01D53/1475 ,  B01D2252/204 ,  B01D2257/504 ,  B01D2258/0283 ,  Y02A50/2342 ,  Y02C10/04 ,  Y02C10/06

摘要： A CO2 recovery device includes a cooling tower including a cooling unit for bringing the flue gas, which contains CO2, into contact with water so as to cool flue gas; a CO2-absorbing unit for bringing the flue gas into contact with a CO2 absorbent (lean solution) so as to remove CO2 from flue gas; and a regenerator including an absorbent regenerating unit for releasing CO2 from a rich solution so as to regenerate the CO2 absorbent. The CO2-absorbing unit includes: a cocurrent flow CO2-absorbing unit provided in a cocurrent flow CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a cocurrent flow so as to remove CO2 from flue gas and a countercurrent CO2-absorbing unit provided in a CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a countercurrent flow so as to remove CO2 from flue gas.

摘要翻译： CO 2回收装置包括：冷却塔，其包括用于使含有CO 2的烟道气与水接触以冷却烟道气的冷却单元; 用于使烟道气与CO 2吸收剂（贫溶液）接触以便从烟道气中除去CO 2的CO 2吸收单元; 以及再生器，其包括用于从富溶液中释放CO 2以便再生CO 2吸收剂的吸收剂再生单元。 二氧化碳吸收单元包括：并流CO2吸收单元，其设置在并流CO2吸收器中，用于使烟道气与CO 2吸收剂以并流方式接触，以便从烟气中除去CO 2和逆流CO2- 提供在CO 2吸收器中的吸收单元，用于使烟气以逆流流动与CO 2吸收剂接触，以便从烟道气中除去CO 2。