公开(公告)号：US20120104589A1

公开(公告)日：2012-05-03

申请号：US13284431

申请日：2011-10-28

Applicant: Rishi Kant ,  Roger Thomas Howe

Inventor： Rishi Kant ,  Roger Thomas Howe

IPC: H01L23/20 ,  H01L21/768

CPC classification number: B81C1/00333 ,  B81C2201/0116

Abstract: A method for sealing through-holes in a material via material diffusion, without the deposition of a sealant material, is disclosed. The method is well suited to the fabrication and packaging of microsystems technology-based devices and systems. In some embodiments, the method comprises forming sacrificial material release through-holes through a structural layer, removing the sacrificial material via an etch that etches the sacrificial material through the release through-holes, and sealing of the release through-holes via material diffusion.

Abstract translation: 公开了一种用于通过材料扩散密封材料中的通孔的方法，而不会密封材料的沉积。 该方法非常适合基于微系统技术的设备和系统的制造和封装。 在一些实施例中，该方法包括通过结构层形成牺牲材料释放通孔，通过经由释放通孔蚀刻牺牲材料的蚀刻以及经由材料扩散密封释放通孔来去除牺牲材料。

公开(公告)号：US20120068277A1

公开(公告)日：2012-03-22

申请号：US12885336

申请日：2010-09-17

Applicant: Thoralf KAUTZSCH ,  Boris BINDER ,  Frank HOFFMANN ,  Uwe RUDOLPH

Inventor： Thoralf KAUTZSCH ,  Boris BINDER ,  Frank HOFFMANN ,  Uwe RUDOLPH

IPC: H01L29/04 ,  H01L21/3205 ,  H01L21/64

CPC classification number: B81C1/00626 ,  B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C2201/0116

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract translation: 描述和描述了与半导体制造有关的实施例和具有半导体结构的半导体器件

公开(公告)号：US07843025B2

公开(公告)日：2010-11-30

申请号：US12359904

申请日：2009-01-26

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00658 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20090127640A1

公开(公告)日：2009-05-21

申请号：US12359904

申请日：2009-01-26

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L29/84 ,  H01L21/3213

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00658 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20070181920A1

公开(公告)日：2007-08-09

申请号：US11724841

申请日：2007-03-16

Applicant: Crocifisso Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

Inventor： Crocifisso Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L29/76

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

公开(公告)号：US07193256B2

公开(公告)日：2007-03-20

申请号：US10726005

申请日：2003-12-01

Applicant: Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

Inventor： Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L29/76

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

Abstract translation: 描述了一种用于制造第一浓缩型半导体衬底的方法，至少包括掩埋绝缘腔，包括以下步骤：在半导体衬底上形成多个沟槽，在半导体衬底上形成表面层，以便 在表面上紧密地闭合形成与沟槽的表面 - 远端相对应的至少一个掩埋腔的多个沟槽。

公开(公告)号：US07045382B2

公开(公告)日：2006-05-16

申请号：US10472650

申请日：2002-03-13

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L21/00

CPC classification number: G01L9/0055 ,  B81B2203/033 ,  B81C1/00047 ,  B81C1/00246 ,  B81C2201/0116 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045

Abstract: Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are introduced into the semiconductor substrate, a subsequent temperature treatment is carried out, in which the openings are converted into voids in the depth of the substrate.

Abstract translation: 提出了一种通过这种方法制造微机械传感器和传感器的方法，其中开口被引入到半导体衬底中。 在将开口引入半导体衬底之后，进行随后的温度处理，其中开口被转换成衬底深度的空隙。