ELASTIC WAVE DEVICE
    41.
    发明申请
    ELASTIC WAVE DEVICE 审中-公开
    弹性波装置

    公开(公告)号:US20160380613A1

    公开(公告)日:2016-12-29

    申请号:US15172267

    申请日:2016-06-03

    发明人: Junpei YASUDA

    IPC分类号: H03H9/145 H03H9/205

    CPC分类号: H03H9/02992 H03H9/02543

    摘要: An elastic wave device includes a piezoelectric substrate, first and second IDT electrodes on a first main surface, and electrode lands each connected to one of the first and second IDT electrodes. First and second side portions extend in a direction perpendicular or substantially perpendicular to a polarization axis direction and to a direction normal to the piezoelectric substrate. The length of the piezoelectric substrate along the polarization axis direction at the first side portion is shorter than that at the second side portion. The first IDT electrode is closer to the first side portion than the second IDT electrode. The electrode lands include a first electrode land connected to the first busbar of the first IDT electrode without having the second IDT electrode interposed therebetween, and a second electrode land being at the same potential as the first busbar of the first IDT electrode.

    摘要翻译: 弹性波装置包括压电基板,第一主表面上的第一和第二IDT电极以及连接到第一和第二IDT电极之一的电极焊盘。 第一和第二侧部分在与偏振轴方向垂直或基本垂直的方向上延伸,并且垂直于压电基片的方向延伸。 压电基板沿第一侧部的偏振轴方向的长度比第二侧部的长度短。 第一IDT电极比第二IDT电极更靠近第一侧部分。 电极焊盘包括连接到第一IDT电极的第一母线的第一电极焊盘,而不插入第二IDT电极,第二电极焊盘处于与第一IDT电极的第一母线相同的电位。

    Method for manufacturing piezoelectric device
    42.
    发明授权
    Method for manufacturing piezoelectric device 有权
    制造压电元件的方法

    公开(公告)号:US09246462B2

    公开(公告)日:2016-01-26

    申请号:US13850513

    申请日:2013-03-26

    发明人: Takashi Iwamoto

    摘要: In a method of manufacturing a piezoelectric device, a compressive stress film is formed on a back surface of a piezoelectric single crystal substrate opposite to a surface on an ion-implanted side. The compressive stress film compresses the surface on the ion-implanted side of the piezoelectric single crystal substrate. The compressive stress produced by the compressive stress film is applied to half of the piezoelectric single crystal substrate on the ion-implanted side with respect to the center line of the thickness of the piezoelectric single crystal substrate to prevent the piezoelectric single crystal substrate from warping. A supporting substrate is then bonded to the surface of a bonding film on the flat piezoelectric single crystal substrate. The joined body of the piezoelectric single crystal substrate and the supporting substrate is then heated to initiate isolation at the ion-implanted portion as the isolation plane.

    摘要翻译: 在制造压电元件的方法中,在与离子注入侧的表面相对的压电单晶基板的背面上形成压应力膜。 压缩应力膜压缩压电单晶衬底的离子注入侧的表面。 将压电应力膜产生的压应力相对于压电单晶基板的厚度的中心线施加到离子注入侧的压电单晶基板的一半,以防止压电单晶基板翘曲。 然后将支撑衬底接合到平坦压电单晶衬底上的接合膜的表面。 然后将压电单晶基板和支撑基板的接合体加热,以在离子注入部分作为隔离平面启动隔离。

    Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
    43.
    发明授权
    Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
    表面声波谐振器,表面声波振荡器和表面声波模块单元

    公开(公告)号:US08803625B2

    公开(公告)日:2014-08-12

    申请号:US13724469

    申请日:2012-12-21

    发明人: Kunihito Yamanaka

    IPC分类号: H03H9/25 H01L41/04

    摘要: It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815

    摘要翻译: 可以通过提高Q值来减小表面声波(SAW)谐振器的尺寸。 在具有用于激发SAW的电极指的IDT设置在晶体基板上的SAW谐振器中,IDT包括设置在IDT的中心的第一区域和设置在第一区域两侧的第二区域和第三区域 。 频率固定在第一区域中,并且随着其接近IDT的边缘,频率逐渐减小的部分被布置在第二区域和第三区域中。 当第一区域的频率为Fa时,第二区域的边缘处的频率为FbM,第三区域的边缘的频率为FcN,频率的变化范围为0.9815

    Acoustic Filter and Method of Acoustic Filter Manufacture
    45.
    发明申请
    Acoustic Filter and Method of Acoustic Filter Manufacture 有权
    声滤波器和声滤波器制造方法

    公开(公告)号:US20130170405A1

    公开(公告)日:2013-07-04

    申请号:US13340396

    申请日:2011-12-29

    申请人: Dong Yan Tuoxin Wang

    发明人: Dong Yan Tuoxin Wang

    IPC分类号: H03H9/25 H03H3/00 H04W4/00

    摘要: An acoustic filter and method of acoustic filter manufacture provides a plurality of series acoustic resonators coupled in series on a first resonator substrate, a plurality of shunt resonators on a second resonator substrate, and a support substrate. The first and second resonator substrates are mounted on the support substrate. The filter further provides a plurality of electrical connections, wherein each respective electrical connection electrically couples a respective one of the plurality of shunt resonators to a respective one of the plurality of series acoustic resonators.

    摘要翻译: 声学滤波器和声学滤波器制造方法提供了串联耦合在第一谐振器基底上的多个串联声谐振器,在第二谐振器基底上的多个并联谐振器和支撑基片。 第一和第二谐振器基板安装在支撑基板上。 滤波器还提供多个电连接,其中每个相应的电连接将多个分流谐振器中的相应一个电耦合到多个串联声谐振器中的相应一个。

    Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
    46.
    发明授权
    Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
    表面声波谐振器,表面声波振荡器和表面声波模块单元

    公开(公告)号:US08358177B2

    公开(公告)日:2013-01-22

    申请号:US13125255

    申请日:2009-10-22

    申请人: Kunihito Yamanaka

    发明人: Kunihito Yamanaka

    IPC分类号: H01L41/04 H03H9/64 H03B5/30

    摘要: It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815

    摘要翻译: 可以通过提高Q值来减小表面声波(SAW)谐振器的尺寸。 在具有用于激发SAW的电极指的IDT设置在晶体基板上的SAW谐振器中,IDT包括设置在IDT的中心的第一区域和设置在第一区域两侧的第二区域和第三区域 。 频率固定在第一区域中,并且随着其接近IDT的边缘,频率逐渐减小的部分被布置在第二区域和第三区域中。 当第一区域的频率为Fa时,第二区域的边缘处的频率为FbM,并且第三区域的边缘处的频率为FcN,频率的变化范围为0.9815

    Crystal Unit
    47.
    发明授权
    Crystal Unit 有权
    水晶单位

    公开(公告)号:US07973457B2

    公开(公告)日:2011-07-05

    申请号:US12759482

    申请日:2010-04-13

    申请人: Toshio Sugiyama

    发明人: Toshio Sugiyama

    IPC分类号: H01L41/18

    CPC分类号: H03H9/02551 H03H9/02543

    摘要: A double rotation Y-cut crystal unit includes a crystal element, which is respectively rotated by an angle θ° and an angle φ° in a counterclockwise direction centering on an X axis and a Z axis of crystal axes (X, Y, Z), which principal surface is perpendicular to a Y″ axis of newly-generated rotated crystal axes (X′, Y″, Z′), and which is formed into a rectangular geometry longer in one direction, wherein when the X′ axis is rotated by an angle α° in the counterclockwise direction with the Y″ axis serving as a central axis in a plane of X′-Z′ of the rotated crystal axes serving as the principal surface, a direction of a long side of the crystal element corresponds to the rotated X′ axis direction, and wherein the angle α° is set to (30−φ)°±45°.

    摘要翻译: 双旋转Y切割晶体单元包括分别以X轴和Z轴(X,Y,Y轴)为中心的逆时针方向旋转角度θ和角度θ的晶体元件, Z),其主表面垂直于新产生的旋转晶轴(X',Y“,Z')的Y”轴,并且其形成为在一个方向上更长的矩形几何形状,其中当X'轴 以作为主面的旋转晶轴的X'-Z'的平面中的Y轴作为中心轴的逆时针方向旋转角度α°,晶体的长边方向 元素对应于旋转的X'轴方向,并且其中角度α°设定为(30-°)°±45°。

    Leaky SAW resonator and method
    48.
    发明授权
    Leaky SAW resonator and method 有权
    泄漏SAW谐振器和方法

    公开(公告)号:US07453334B1

    公开(公告)日:2008-11-18

    申请号:US11277052

    申请日:2006-03-21

    IPC分类号: H03H9/145 H03H9/25 H03H9/64

    摘要: A SAW ladder filter includes grating pads extending from opposing bus bars and interdigital transducer electrodes extending from the grating pads for defining an acoustic aperture. The metalization ratio for the grating pads is greater than that for the interdigital transducer electrodes. Reflector electrodes are disposed on opposing longitudinal sides of the interdigital transducer electrodes. Operation of the filter results in a velocity of the SAW along the grating pads slower than a SAW velocity along the plurality of interdigital transducer electrodes, thus producing a wave guiding effect for optimizing SAW propagation within the acoustic aperture. The grating pads may be longitudinally offset from cooperating interdigital transducer electrodes using minor bus bars.

    摘要翻译: SAW梯形滤波器包括从相对的母线延伸的光栅焊盘和从光栅焊盘延伸的叉指式换能器电极,用于限定声孔。 光栅焊盘的金属化率大于指数式换能器电极的金属化率。 反射器电极设置在叉指式换能器电极的相对的纵向侧上。 滤波器的操作导致SAW沿着光栅焊盘的速度比沿着多个叉指式换能器电极的SAW速度慢,从而产生用于优化声孔内的SAW传播的波导效应。 光栅焊盘可以使用次要的母线纵向偏离配合的叉指式换能器电极。

    Surface acoustic wave device and environmental difference detecting apparatus using the surface acoustic wave device
    49.
    发明授权
    Surface acoustic wave device and environmental difference detecting apparatus using the surface acoustic wave device 失效
    表面声波装置和使用表面声波装置的环境差异检测装置

    公开(公告)号:US07408285B2

    公开(公告)日:2008-08-05

    申请号:US11812369

    申请日:2007-06-18

    IPC分类号: H01L41/187 H01L41/04

    摘要: A surface acoustic wave device includes a three-dimensional substrate having an annular curved surface enabling to propagate a surface acoustic wave, and an electro-acoustic transducing element, which excites and propagates the surface wave along the surface, and receives the propagated surface wave. The substrate is made of a Li2B4O7, Bi12SiO20, LiNbO3, LiTaO3, or quartz crystal, and the element propagates the surface wave along a line of intersection between a crystal face of the crystal and the surface, and the line of intersection is defined as an outermost circumferential line of the surface. An environmental difference detecting apparatus uses the device having a plurality of propagating surface zones and compares surface acoustic wave reception signals of electro-acoustic transducing elements in the propagating surface zones of the device with each other, and detects an environmental difference in space portions with which the propagating surface zones come into contact.

    摘要翻译: 表面声波装置包括具有能够传播表面声波的环形弯曲表面的三维基板和沿表面激发并传播表面波并且接收传播的表面波的电声换能元件。 衬底由Li 2 N 2 O 3,N 2 O 2,N 2,SiO 2,SiO 2, 或者石英晶体,并且该元件沿晶体的晶面与表面之间的交线相互传播表面波, 并且交叉线被定义为表面的最外周线。 环境差异检测装置使用具有多个传播表面区域的装置,并将装置的传播表面区域中的电声换能元件的表面声波接收信号彼此进行比较,并且检测该装置的传播表面区域中的环境差异, 传播表面区域接触。

    Surface acoustic wave device and environmental difference detecting apparatus using the surface acoustic wave device

    公开(公告)号:US07368847B2

    公开(公告)日:2008-05-06

    申请号:US11812370

    申请日:2007-06-18

    IPC分类号: H01L41/187 H01L41/04

    摘要: A surface acoustic wave device includes a three-dimensional substrate having an annular curved surface enabling to propagate a surface acoustic wave, and an electro-acoustic transducing element, which excites and propagates the surface wave along the surface, and receives the propagated surface wave. The substrate is made of a Li2B4O7, Bi12SiO20, LiNbO3, LiTaO3, or quartz crystal, and the element propagates the surface wave along a line of intersection between a crystal face of the crystal and the surface, and the line of intersection is defined as an outermost circumferential line of the surface. An environmental difference detecting apparatus uses the device having a plurality of propagating surface zones and compares surface acoustic wave reception signals of electro-acoustic transducing elements in the propagating surface zones of the device with each other, and detects an environmental difference in space portions with which the propagating surface zones come into contact.