摘要:
Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.
摘要:
A surface acoustic wave device with improved temperature characteristics includes a piezoelectric substrate of a single crystal of symmetry 3m, providing propagation of a SAW having an electromechanical coupling factor exceeding 5%, an electrode pattern on a substrate surface forming a resonator, and a SiOx overlay covering the electrode pattern. An optimized thickness of the electrodes combined with an SiOx overlay provide improved performance in RF applications with improved temperature characteristics. To suppress spurious responses the SiOx thickness is varied depending upon the relative thickness and period of the electrodes. The electrode pattern forms resonators with the silicon oxide thickness over the electrodes inversely related to the period of the electrodes of the resonators.
摘要:
An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.
摘要:
A piezoelectric boundary acoustic wave (PBAW) device includes a slotted dielectric body disposed over one surface of a piezoelectric body and electrodes forming an IDT at the interface between the piezoelectric body and the dielectric body. The thickness of the electrode is set so that the acoustic velocity of the boundary acoustic waves is less than acoustic waves propagating in the piezoelectric body.
摘要:
An acoustic wave device includes electrodes carried on a surface of a piezoelectric material and an array of reflective obstacles such that elastic energy resulting from a piezoelectric effect is preferentially directed along a primary wave propagation path. The array of reflective obstacles are positioned generally parallel to the surface of the piezoelectric material and redirect acoustic waves typically reflected in other than a desirable direction to along a desired direction generally along the primary propagation path. The obstacles improve performance for SAW and BAW devices by effecting reflected energy and suppressing spurious modes.
摘要:
A SAW device includes a LiNbO3 single crystal piezoelectric substrate having an orientation defined by Euler angles (λ,μ,θ), with angle λ ranging from −5° to +5°, angle μ ranging from about −74° to about −65°, and angle θ ranging from −5° to +5°. Electrode patterns on a surface of the substrate form element resonators having a metallization ratio ranging from about 0.3 to about 0.8 and electrode thicknesses ranging from about 12% to about 17.5% of an acoustic wavelength of a strongly coupled non-leaky surface acoustic wave, excited on the surface of the substrate, if Al is used as electrode material, and in a range from about 6% to about 10% of an acoustic wavelength, if Cu is used as electrode material. Such orientations simultaneously combined with an optimized electromechanical coupling of spurious surface acoustic mode provide for improved performance in RF applications with a widened passband.
摘要:
A hybrid leaky surface acoustic wave (LSAW) resonator filter has a wide bandwidth, low insertion loss and return loss, and excellent rejection of frequencies outside the passband, and includes one or more longitudinally coupled LSAW resonator filter tracks with chirp-type resonant cavities, reflective gratings, and a plurality of interdigital transducers (IDTs) disposed end-to-end therebetween. An acoustic resonant cavity is formed between each of the IDTs and its neighboring IDTs or gratings by chirping the fingers of the IDTs in the vicinity of the cavity. A one or more LSAW impedance element filters are disposed upon the same substrate and connected in series and/or shunt with the longitudinally coupled LSAW resonator tracks. The frequencies of the LSAW impedance-element filters are chosen such that their combination with the longitudinally coupled LSAW resonator filter tracks results in the formation of deep nulls in the overall transfer function at frequencies just outside of the passband.
摘要:
A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiTaO3 and an electrode pattern provided on a surface of the piezoelectric substrate which forms a resonator having an electrode thickness in a range of about 1% to about 15% of an acoustic wavelength of a surface acoustic wave excited on the surface of the substrate. The piezoelectric substrate has an orientation defined by Euler angles (&lgr;, &mgr;, &thgr;), with angle &lgr; in a range from −4° to +4°, angle &mgr; in a range from about −52° to about −36°, and angle &thgr; in a range from about (−1.365 &lgr;−4)° to (−1.365 &lgr;+4)°. Such orientations simultaneously combined with an optimized propagation loss at resonant and anti-resonant frequencies provide for improved performance in RF applications.
摘要:
A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized by a resisitivity of at least 100 ohm-cm and an expansion coefficient compatible with the piezoelectric substrate. A catalytic bonding film between the piezoelectric substrate and the surrogate substrate is formed from a first catalytic bonding film deposited onto a surface of the piezoelectric substrate and a second catalytic bonding film deposited onto a surface of the surrogate substrate. The piezoelectric substrate is bonded to the surrogate substrate through a compression force sufficient for providing a bonding at a normal temperature.
摘要:
A surface acoustic wave device includes a piezoelectric substrate of a single crystal LiNbO3 and an electrode pattern provided on a surface of the piezoelectric substrate which forms a resonator having an electrode thickness in a range of about 0.1% to about 8% of an acoustic wavelength of a surface acoustic wave excited on the surface of the substrate. The piezoelectric substrate has an orientation defined by Euler angles (&lgr;,&mgr;,&thgr;), with angle &lgr; in a range from −20° to +20°, angle &mgr; in a range from about −45° to about −10°, and angle &thgr; in a range from about (−1.16&lgr;−1.5)° to (−1.16&lgr;+1.5)°, wherein one of angle &lgr; and &thgr; is not equal to zero degrees. Such orientations simultaneously combined with an optimized propagation loss at resonant and anti-resonant frequencies provide for improved performance in RF applications.