公开(公告)号：US11082026B2

公开(公告)日：2021-08-03

申请号：US17097129

申请日：2020-11-13

申请人： NGK INSULATORS, LTD.

发明人： Yuji Hori ,  Tatsuro Takagaki

IPC分类号： H03H9/02 ,  H01L41/312 ,  H03H9/25 ,  H01L41/337 ,  H01L41/187 ,  C30B33/06 ,  C23C14/10 ,  C23C14/08 ,  C30B29/30 ,  H01L41/313

摘要： A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

公开(公告)号：US20200227623A1

公开(公告)日：2020-07-16

申请号：US16834159

申请日：2020-03-30

申请人： NGK INSULATORS, LTD.

发明人： Yuji HORI ,  Takahiro YAMADERA ,  Tatsuro TAKAGAKI

IPC分类号： H01L41/312 ,  C30B29/30 ,  H01L41/187 ,  H01L41/053 ,  H01L41/09 ,  H01L41/337 ,  H03H3/08 ,  H03H9/25

摘要： A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

公开(公告)号：US10711371B2

公开(公告)日：2020-07-14

申请号：US15572595

申请日：2016-06-08

申请人： SUMITOMO METAL MINING CO., LTD.

发明人： Tomio Kajigaya

IPC分类号： C30B29/30 ,  C30B33/02 ,  C30B15/00 ,  C30B15/20 ,  C30B29/20 ,  H03H9/02

摘要： To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same.A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 500° C., to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 Ω·cm or more to 1×1010 Ω·cm or less.

公开(公告)号：US10658570B2

公开(公告)日：2020-05-19

申请号：US15577456

申请日：2016-06-01

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Shoji Akiyama ,  Makoto Kawai

IPC分类号： H01L41/312 ,  H01L41/335 ,  H01L21/02 ,  H01L21/762 ,  B32B18/00 ,  B32B37/18 ,  B32B38/00 ,  B32B38/10 ,  C23C14/48 ,  C23C14/58 ,  H01L41/187 ,  C30B29/30 ,  H03H9/02

摘要： A composite wafer has an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, includes steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

公开(公告)号：US10526725B2

公开(公告)日：2020-01-07

申请号：US14917149

申请日：2014-09-11

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Masanori Ikari

IPC分类号： C30B29/22 ,  G02F1/00 ,  C30B29/32 ,  G02F1/09 ,  C30B1/12 ,  C30B29/30 ,  C04B35/01 ,  C04B35/16 ,  C04B35/457 ,  C04B35/462 ,  C04B35/486 ,  C04B35/495 ,  C04B35/626 ,  C04B35/645

摘要： This invention provides a transparent magnetooptical material that is suitable for use in a magnetooptical device such as an optical isolator. Said magnetooptical material comprises either a transparent ceramic consisting primarily of a complex oxide that can be represented by formula (1) or a single crystal of such a complex oxide. Said magnetooptical material does not absorb fiber-laser light in the 0.9-1.1 μm wavelength range, does not cause heat lensing, and has a higher Verdet constant than TGG crystals, with a Verdet constant of at least 0.14 min/(Oe·cm) at a wavelength of 1,064 nm. Tb2R2O7  (1) (In formula (1), R represents one or more elements selected from among the group consisting of silicon, germanium, titanium, tantalum, tin, hafnium, and zirconium (but not silicon only, germanium only, or tantalum only)).

公开(公告)号：US20190288660A1

公开(公告)日：2019-09-19

申请号：US16422322

申请日：2019-05-24

申请人： NGK Insulators, Ltd.

发明人： Masashi GOTO ,  Tomoyoshi TAI ,  Takahiro YAMADERA ,  Yuji HORI ,  Keiichiro ASAI ,  Masahiko NAMERIKAWA ,  Takashi YOSHINO

IPC分类号： H03H9/02 ,  C30B29/30 ,  H03H3/08 ,  H03H9/25 ,  H03H9/05 ,  H01L41/312 ,  H01L41/18

摘要： A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89).

公开(公告)号：US10418543B2

公开(公告)日：2019-09-17

申请号：US15542703

申请日：2016-01-06

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Jun Abe ,  Masayuki Tanno ,  Yoshinori Kuwabara

IPC分类号： H01L41/39 ,  C30B31/02 ,  H03H3/08 ,  H03H9/25 ,  C30B29/30 ,  H01L41/18 ,  H03H9/02

摘要： [Object]An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.[Means to solve the Problems]In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

公开(公告)号：US20190007025A1

公开(公告)日：2019-01-03

申请号：US15741361

申请日：2016-06-08

申请人： SUMITOMO METAL MINING CO., LTD.

发明人： Tomio KAJIGAYA

IPC分类号： H03H9/02 ,  C30B29/30 ,  C30B33/02 ,  H01L41/187 ,  H01L41/41 ,  H03H3/08

摘要： To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot.A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and Al2O3, and heat-treated at a temperature of 450° C. or more and less than 660° C., which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×108 Ω·cm or more to 2×1012 Ω·cm or less.

公开(公告)号：US20180375014A1

公开(公告)日：2018-12-27

申请号：US16064416

申请日：2016-12-21

申请人： Soitec

发明人： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC分类号： H01L41/39 ,  C30B29/30 ,  H01L41/187 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H01L41/319

摘要： A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

公开(公告)号：US10161061B2

公开(公告)日：2018-12-25

申请号：US15260320

申请日：2016-09-09

申请人： KOREA INSTITUTE OF MACHINERY AND MATERIALS

发明人： Cheol-Woo Ahn ,  Jung-Ho Ryu ,  Byung-Dong Hahn

IPC分类号： H01L41/18 ,  C30B29/30 ,  C30B29/22 ,  C30B1/04 ,  C04B35/495 ,  H01L41/187

摘要： Disclosed is a (K,Na)NbO3 (abbreviated by “KNN”)-based single crystal ceramic. The KNN-based single crystal ceramic according to the present disclosure is formulated by (K0.5−x/2Na0.5−x/2−y□y/2Mx+y/2)Nb1−x/3+yO3, wherein M indicates a metal having a different valence from Na, and □ indicates a metal vacancy. The above formulated KNN-based single crystal ceramic allows compensating for the volatilization of Na in a growing grain due to the addition of M2+ ions, and substituting M2+ ions for Na+ ions to form metal vacancies, thereby making possible the single crystal growth.