公开(公告)号：US11217764B2

公开(公告)日：2022-01-04

申请号：US16176385

申请日：2018-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuo Tsutsui ,  Hiroko Yamazaki ,  Satoshi Seo

IPC: H01L27/32 ,  H01L51/50 ,  B82Y10/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/52 ,  H01L51/00 ,  H01L51/05

Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

公开(公告)号：US11217752B2

公开(公告)日：2022-01-04

申请号：US16539464

申请日：2019-08-13

Applicant: BASF SE

Inventor： Mathieu G. R. Turbiez ,  Rene Albert Johan Janssen ,  Martinus Maria Wienk ,  Hans Juerg Kirner ,  Mathias Dueggeli

IPC: H01L51/30 ,  H01L51/00 ,  B82Y10/00 ,  C07D487/04 ,  C08G61/00 ,  C08G61/02 ,  C08G61/12 ,  C09B69/10 ,  H01L51/05 ,  H01L51/42 ,  H01L51/50 ,  H01L51/44

Abstract: A polymer includes repeating unit(s) of the formula (I). a, b, c, d, e and f are 0, 1, 2, or 3. Ar1 and Ar1′ are independently of each other a group of formula (AR1). Ar2, Ar2′, Ar3, Ar3′, Ar4 and Ar4′ are independently of each other a group of formula (AR2). The polymer is preferably a co-polymer.

公开(公告)号：US11205754B2

公开(公告)日：2021-12-21

申请号：US16264794

申请日：2019-02-01

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Bharat Kumar ,  George S. Tulevski

IPC: H01L51/00 ,  H01L51/05 ,  C01B32/158

Abstract: A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

公开(公告)号：US11196003B2

公开(公告)日：2021-12-07

申请号：US16714336

申请日：2019-12-13

Applicant: QATAR FOUNDATION FOR EDUCATION, SCIENCE AND COMMUNITY DEVELOPMENT

Inventor： Hugo Bronstein ,  Mohammed Al-Hashimi ,  Tobin J. Marks ,  Kealan Fallon

IPC: H01L51/00 ,  C08G61/12 ,  C09B57/00 ,  C09B69/10 ,  H01L51/42 ,  H01L51/05

Abstract: The organic semiconductor polymers relate to polymers containing an indolo-naphthyridine-6,13-dione thiophene (INDT) chromophore. The organic semiconductor polymers are formed by polymerizing INDT monomer with thiophene to obtain a conjugated polymer of the chromophore linked by thiophene monomers (INDT-T), with phenyl to obtain a conjugated polymer of the chromophore linked by phenyl monomers (INDT-P), with selenophene to obtain a conjugated polymer of the chromophore linked by selenophene monomers (INDT-S), or with benzothiadazole to obtain a conjugated polymer of the chromophore linked by benzothiadazole monomers (INDT-BT).

公开(公告)号：US20210371428A1

公开(公告)日：2021-12-02

申请号：US17263715

申请日：2019-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NOBUYUKI MATSUZAWA ,  HIDEYUKI ARAI ,  MASARU SASAGO

IPC: C07D495/14 ,  H01L51/00 ,  H01L51/05

Abstract: To provide a fused thiophene molecule having further sufficiently high hole mobility. Disclosed is a fused thiophene molecule that has seven aromatic rings containing three thiophene rings in one molecule and in which the seven aromatic rings have one or two naphthalene structures. And, semiconductor devices including a layer using the fused thiophene molecule are disclosed.

公开(公告)号：US11185918B2

公开(公告)日：2021-11-30

申请号：US15740589

申请日：2016-06-30

Applicant: National Research Council of Canada

Inventor： Zhiyi Zhang ,  Ye Tao ,  Ta-Ya Chu ,  Gaozhi Xiao

IPC: B22F3/105 ,  B22F3/24 ,  B22F5/00 ,  B22F7/04 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  H01L51/00 ,  H01L51/05 ,  H05K1/09 ,  H05K3/06 ,  H05K3/46 ,  B82Y20/00

Abstract: A method is disclosed for aligning layers in fabricating a multilayer printable electronic device. The method entails providing a transparent substrate upon which a first metal layer is deposited, providing a transparent functional layer over the first metal layer, depositing metal nano particles over the functional layer to form a second metal layer, exposing the metal nano particles to intense pulsed light via an underside of the substrate to partially sinter exposed particles to the functional layer whereby the first metal layer acts as a photo mask, and washing away unexposed particles using a solvent to leave partially sintered metal nano particles on the substrate.

公开(公告)号：US11183638B2

公开(公告)日：2021-11-23

申请号：US16422665

申请日：2019-05-24

Applicant: Purdue Research Foundation

Inventor： Jianguo Mei ,  Aristide Gumyusenge

IPC: H01L51/00 ,  H01L51/05

Abstract: A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

公开(公告)号：US11174350B2

公开(公告)日：2021-11-16

申请号：US15765596

申请日：2016-09-21

Applicant: TORAY INDUSTRIES, INC.

Inventor： Yuki Masuda ,  Yu Shoji ,  Kimio Isobe ,  Ryoji Okuda

IPC: C08G73/10 ,  G03F7/20 ,  C08L79/08 ,  C08K5/13 ,  G03F7/075 ,  H01L51/05

Abstract: A resin and a photosensitive resin composition whereby a cured film exhibiting high extensibility, reduced stress, and high adhesion to metals can be obtained are provided. A resin (A) including a polyamide structure and at least any structure of an imide precursor structure and an imide structure, wherein at least any of the structures of the resin (A) include a diamine residue having an aliphatic group.

公开(公告)号：US20210351354A1

公开(公告)日：2021-11-11

申请号：US17320741

申请日：2021-05-14

Applicant: Christian Lau ,  Max SHULAKER

Inventor： Christian Lau ,  Max SHULAKER

IPC: H01L51/00 ,  H01L51/05 ,  C01B32/174 ,  H01L51/10

Abstract: A technology called RINSE (Removal of Incubated Nanotubes through Selective Exfoliation) is demonstrated. RINSE removes carbon nanotube (CNT) aggregates in CNFETs without compromising CNFET performance. In RINSE, CNTs are deposited on a substrate, coated with a thin adhesive layer, and sonicated. The adhesive layer is strong enough to keep the individual CNTs on the substrate, but not the larger CNT aggregates. When combined with a CNFET CMOS process as disclosed here, record CNFET CMOS yield and uniformity can be realized.

公开(公告)号：US20210341789A1

公开(公告)日：2021-11-04

申请号：US17377588

申请日：2021-07-16

Applicant: Sharp Kabushiki Kaisha

Inventor： Akira HIRAI ,  Kiyoshi MINOURA ,  Yasuhiro HASEBA ,  Akira SAKAI

IPC: G02F1/13357 ,  H01L51/05

Abstract: The present invention provides a liquid crystal display device including: a liquid crystal panel including a viewing surface side substrate, a liquid crystal layer, and a back surface side substrate; and a backlight including a reflector facing the back surface side substrate, wherein the liquid crystal panel in a plan view includes multiple pixel regions and a non-display region between the pixel regions, in the pixel regions, color filters are disposed, in the non-display region, a gate electrode layer, a source-drain electrode layer, and a semiconductor layer are disposed, the back surface side substrate includes a reflective surface facing the backlight in at least part of the non-display region, and the reflective surface is constituted by a metal material having a higher reflectance than a metal material contained in portions of the source-drain electrode layer that are connected to the semiconductor layer.