公开(公告)号：US20190310555A1

公开(公告)日：2019-10-10

申请号：US16392220

申请日：2019-04-23

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Norman Baer ,  Ulrich Loering ,  Oliver Natt ,  Gero Wittich ,  Timo Laufer ,  Peter Kuerz ,  Guido Limbach ,  Stefan Hembacher ,  Holger Walter ,  Yim-Bun-Patrick Kwan ,  Markus Hauf ,  Franz-Josef Stickel ,  Jan Van Schoot

IPC: G03F7/20 ,  G03B27/54 ,  G02B5/08 ,  G02B5/00 ,  G02B17/06 ,  B82Y10/00 ,  G02B3/00 ,  G21K1/06 ,  G02B27/00 ,  G02B7/18

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

公开(公告)号：US10437157B2

公开(公告)日：2019-10-08

申请号：US15533309

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Markus Gerardus Martinus Maria Van Kraaij ,  Adrianus Cornelis Matheus Koopman ,  Stefan Hunsche ,  Willem Marie Julia Marcel Coene

IPC: G03B27/32 ,  G03F7/20 ,  G06T7/12 ,  G06T7/149 ,  G06T7/60

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

公开(公告)号：US20190302570A1

公开(公告)日：2019-10-03

申请号：US16307376

申请日：2017-06-01

Applicant: ASML Netherlands B.V.

Inventor： Nitish KUMAR ,  Simon Reinald HUISMAN

IPC: G02F1/365 ,  H01S3/067

Abstract: A supercontinuum radiation source for an alignment mark measurement system comprises: a radiation source; illumination optics; a plurality of waveguides; and collection optics. The radiation source is operable to produce a pulsed radiation beam. The illumination optics is arranged to receive the pulsed pump radiation beam and to form a plurality of pulsed sub-beams, each pulsed sub-beam comprising a portion of the pulsed radiation beam. Each of the plurality of waveguides is arranged to receive at least one of the plurality of pulsed sub-beams beam and to broaden a spectrum of that pulsed sub-beam so as to generate a supercontinuum sub-beam. The collection optics is arranged to receive the supercontinuum sub-beam from each of the plurality of waveguides and to combine them so as to form a supercontinuum radiation beam.

公开(公告)号：US10429746B2

公开(公告)日：2019-10-01

申请号：US16163751

申请日：2018-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexandru Onose ,  Seyed Iman Mossavat ,  Thomas Theeuwes

IPC: G03F7/20

Abstract: Methods and apparatus for estimating an unknown value of at least one of a plurality of sets of data, each set of data including a plurality of values indicative of radiation diffracted and/or reflected and/or scattered by one or more features fabricated in or on a substrate, wherein the plurality of sets of data include at least one known value, and wherein at least one of the plurality of sets of data includes an unknown value, the apparatus including a processor to estimate the unknown value of the at least one set of data based on: the known values of the plurality of sets of data, a first condition between two or more values within a set of data of the plurality of sets of data, and a second condition between two or more values being part of different sets of data of the plurality of the sets of data.

公开(公告)号：US20190296514A1

公开(公告)日：2019-09-26

申请号：US16441864

申请日：2019-06-14

Applicant: ASML Netherlands B.V.

Inventor： Yongfeng NI

IPC: H01S3/067 ,  G03F9/00 ,  G03F7/20 ,  H01S3/10 ,  G02F1/365 ,  H01S3/094

Abstract: A supercontinuum radiation source comprises: a radiation source, an optical amplifier and a non-linear optical medium. The radiation source is operable to produce a pulsed radiation beam. The optical amplifier is configured to receive the pulsed radiation beam and increase an intensity of the pulsed radiation beam. The non-linear optical medium is configured to receive the amplified pulsed radiation beam and to broaden its spectrum so as to generate a supercontinuum radiation beam. The optical amplifier may supply a pump radiation beam to a gain medium, an intensity of the pump radiation beam being periodic and having a pump frequency that is an integer multiple of the frequency of the pulsed radiation beam. The optical amplifier may supply pump energy to a gain medium only when the pulses of the pulsed radiation beam propagate through the gain medium.

公开(公告)号：US20190294753A1

公开(公告)日：2019-09-26

申请号：US16316465

申请日：2017-06-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Taksh PANDEY ,  Mark Christopher SIMMONS

IPC: G06F17/50 ,  G03F1/36 ,  G03F7/20

Abstract: A process, including: obtaining data specifying a layout of a lithographic pattern; obtaining performance metrics of a computational analysis of the layout, the performance metrics indicating performance of one or more computer processes performing respective portions of the computational analysis; correlating the performance metrics to portions of the layout processed during measurement of the respective performance metrics; and generating a three or higher dimensional visualization based on a result of correlating the performance metrics to portions of the layout processed during measurement, wherein at least some of the visualization dimensions indicate relative positions of portions of the layout and at least some of the visualization dimensions indicate a performance metric correlated to the respective portions.

公开(公告)号：US10423076B2

公开(公告)日：2019-09-24

申请号：US15553879

申请日：2016-02-24

Applicant: ASML Netherlands B.V.

Inventor： Peng Liu

IPC: G03F7/20

Abstract: A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

公开(公告)号：US20190289704A1

公开(公告)日：2019-09-19

申请号：US16434367

申请日：2019-06-07

Applicant: ASML Netherlands B.V.

Inventor： Jonghoon BAEK ,  Mathew Cheeran ABRAHAM ,  David Robert EVANS ,  Jack Michael GAZZA

IPC: H05G2/00 ,  G03F7/20 ,  G02B19/00 ,  G02B27/00

Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

公开(公告)号：US20190285993A1

公开(公告)日：2019-09-19

申请号：US16428215

申请日：2019-05-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Jin LIAN ,  Samee Ur REHMAN ,  Martin Jacobus Johan JAK

IPC: G03F7/20 ,  G01B11/02

Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

公开(公告)号：US10418324B2

公开(公告)日：2019-09-17

申请号：US15389593

申请日：2016-12-23

Applicant: ASML Netherlands B.V.

Inventor： Marcel Nicolaas Jacobus van Kervinck ,  Vincent Sylvester Kuiper ,  Marco Jan-Jaco Wieland

IPC: H01L25/00 ,  H01L23/528 ,  G03F7/20 ,  G06F17/50 ,  H01L21/263 ,  H01L25/065 ,  H01L27/02 ,  H01L29/06 ,  H01L21/768 ,  H01L27/06

Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.