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公开(公告)号：US20230268307A1
公开(公告)日：2023-08-24
申请号：US18058693
申请日：2022-11-23
发明人： Cyprian Emeka Uzoh , Jeremy Alfred Theil , Liang Wang , Rajesh Katkar , Guilian Gao , Laura Wills Mirkarimi
IPC分类号： H01L23/00
CPC分类号： H01L24/26 , H01L24/83 , H01L24/09 , H01L24/30 , H01L24/27 , H01L24/03 , H01L2924/01025 , H01L2224/08257 , H01L2924/01028 , H01L2924/01027
摘要： Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.
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公开(公告)号：US20230253383A1
公开(公告)日：2023-08-10
申请号：US18300306
申请日：2023-04-13
CPC分类号： H01L25/162 , H01L21/4803 , H01L23/14
摘要： Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.
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公开(公告)号：US11694925B2
公开(公告)日：2023-07-04
申请号：US17313185
申请日：2021-05-06
发明人： Rajesh Katkar , Cyprian Emeka Uzoh
IPC分类号： H01L21/768 , H01L23/00 , H01L21/68 , H01L25/065 , H01L23/532 , H01L25/00
CPC分类号： H01L21/76843 , H01L21/68 , H01L23/53238 , H01L24/09 , H01L25/0657 , H01L25/50 , H01L2224/08237 , H01L2225/06513 , H01L2924/37001
摘要： Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.
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公开(公告)号：US20230197496A1
公开(公告)日：2023-06-22
申请号：US18067305
申请日：2022-12-16
发明人： Jeremy Alfred Theil
IPC分类号： H01L21/683 , B32B43/00
CPC分类号： H01L21/6835 , B32B43/006 , H01L2221/68381 , H01L2221/68327 , H01L21/02115
摘要： A bonding method is disclosed. The bonding method can include providing a first element having a device portion and a first nonconductive bonding material disposed over the device portion of the first element. The bonding method can include providing a second element that includes a carrier. The second element having a substrate and a second nonconductive bonding material disposed over the substrate of the second element. The bonding method can include depositing a release layer between the device portion and the first nonconductive bonding material of the first element or between the substrate and the second nonconductive bonding material of the second element. The bonding method can include directly bonding the first nonconductive bonding material of the first element to the second nonconductive bonding material of the second element without an intervening adhesive. The bonding method can include removing the second element from the first element by transferring thermal energy to the release layer to thereby induce diffusion of gas including volatile species out of the release layer.
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公开(公告)号：US11664357B2
公开(公告)日：2023-05-30
申请号：US16459610
申请日：2019-07-02
IPC分类号： H01L21/762 , H01L21/20 , H01L25/16 , H01L21/48 , H01L23/14
CPC分类号： H01L25/162 , H01L21/4803 , H01L23/14
摘要： Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.
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公开(公告)号：US20230154816A1
公开(公告)日：2023-05-18
申请号：US18055798
申请日：2022-11-15
CPC分类号： H01L23/36 , H01L24/32 , H01L24/08 , H01L2224/32221 , H01L2224/08145
摘要： The disclosed technology relates to microelectronic devices that can dissipate heat efficiently. In some aspects, such a microelectronic device includes a first semiconductor element and at least one second semiconductor element disposed on the first semiconductor element. Such a microelectronic device may further include a thermal block disposed on the first semiconductor element and adjacent to the at least one second semiconductor element. The thermal block may include a conductive thermal pathway to transfer heat from the first semiconductor element to a heat sink disposed on the thermal block. In some embodiments, a coefficient of thermal expansion (CTE) of the thermal block is less than 10 μm/m° C. In some embodiments, a thermal conductivity of the thermal block is higher than 150 Wm-1K-1. at room temperature.
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公开(公告)号：US20230132632A1
公开(公告)日：2023-05-04
申请号：US18050307
申请日：2022-10-27
发明人： Rajesh Katkar , Cyprian Emeka Uzoh
IPC分类号： H01L23/00
摘要： An element that is configured to bond to another element to define a bonded structure is disclosed. The element can include a dielectric bonding layer having a cavity that extends at least partially through a thickness of the dielectric bonding layer from a surface of the dielectric bonding layer. The element can also include a conductive feature that is at least partially disposed in the cavity. The conductive feature has a contact surface. The element can include a diffusion barrier layer between the conductive feature and a portion of the dielectric bonding layer. The barrier layer includes a barrier metal. The barrier metal of the diffusion barrier layer has an oxidation propensity that is greater than an oxidation propensity of the conductive feature.
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公开(公告)号：US11631586B2
公开(公告)日：2023-04-18
申请号：US16914169
申请日：2020-06-26
IPC分类号： H01L21/20 , H01L23/498 , H01L21/768 , H01L25/00 , H01L49/02 , H01L27/06 , H01L21/683 , H01L23/00 , H01L25/065
摘要： A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.
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公开(公告)号：US20230100032A1
公开(公告)日：2023-03-30
申请号：US17934514
申请日：2022-09-22
IPC分类号： H01L23/538 , H01L23/48 , H01L23/00 , H01L25/065
摘要： A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.
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公开(公告)号：US11610846B2
公开(公告)日：2023-03-21
申请号：US16844932
申请日：2020-04-09
IPC分类号： H01L23/552 , H01L23/00
摘要： A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry and a first bonding layer. The bonded structure can include a protective element directly bonded to the semiconductor element without an adhesive along a bonding interface. The protective element can include an obstructive material disposed over the active circuitry and a second bonding layer on the obstructive material. The second bonding layer can be directly bonded to the first bonding layer without an adhesive. The obstructive material can be configured to obstruct external access to the active circuitry.
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