公开(公告)号：US20150287695A1

公开(公告)日：2015-10-08

申请号：US14438668

申请日：2013-03-20

申请人： COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Léa Di Cioccio ,  Sébastien Mermoz ,  Loïc Sanchez

IPC分类号： H01L23/00 ,  H01L23/14 ,  H01L21/311

CPC分类号： H01L24/83 ,  H01L21/311 ,  H01L21/481 ,  H01L23/13 ,  H01L23/147 ,  H01L23/15 ,  H01L24/08 ,  H01L24/80 ,  H01L24/95 ,  H01L25/50 ,  H01L2224/08237 ,  H01L2224/08238 ,  H01L2224/08257 ,  H01L2224/08258 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80487 ,  H01L2224/83192 ,  H01L2224/95085 ,  H01L2224/95146 ,  H05K3/303 ,  Y02P70/613 ,  Y10T428/24488 ,  Y10T428/24802 ,  H01L2924/05442

摘要： A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

摘要翻译： 一种用于在用于自组装支撑件（19,43）上的至少一个元件（10）的方法中的用于在支撑件（19,43）上产生至少一个垫组件（32,50）的方法，包括扇形， 在所述支撑件（19,43）上的围绕所述垫组件（32,50）的位置（30,44）的至少一个氟化材料的层（28,48），所述层（28,48）具有厚度 大于10nm。 在臭氧存在下，将层（28,48）和位置（30,44）暴露于紫外线处理，以在所述位置（30,44）处形成衬垫组件（32,50），其中一滴液体 （16）在所述衬垫组件（32,50）上具有小于或等于15°的静态接触角，在所述紫外线处理之后，所述层（28,48）上的静态接触角大于或等于 至100°。

公开(公告)号：US09240389B2

公开(公告)日：2016-01-19

申请号：US14438668

申请日：2013-03-20

申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Léa Di Cioccio ,  Sébastien Mermoz ,  Loïc Sanchez

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/311 ,  H01L23/14

CPC分类号： H01L24/83 ,  H01L21/311 ,  H01L21/481 ,  H01L23/13 ,  H01L23/147 ,  H01L23/15 ,  H01L24/08 ,  H01L24/80 ,  H01L24/95 ,  H01L25/50 ,  H01L2224/08237 ,  H01L2224/08238 ,  H01L2224/08257 ,  H01L2224/08258 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80487 ,  H01L2224/83192 ,  H01L2224/95085 ,  H01L2224/95146 ,  H05K3/303 ,  Y02P70/613 ,  Y10T428/24488 ,  Y10T428/24802 ,  H01L2924/05442

摘要： A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

摘要翻译： 一种用于在用于自组装支撑件（19,43）上的至少一个元件（10）的方法中的用于在支撑件（19,43）上产生至少一个垫组件（32,50）的方法，包括扇形， 在所述支撑件（19,43）上的围绕所述垫组件（32,50）的位置（30,44）的至少一个氟化材料的层（28,48），所述层（28,48）具有厚度 大于10nm。 在臭氧存在下，将层（28,48）和位置（30,44）暴露于紫外线处理，以在所述位置（30,44）处形成衬垫组件（32,50），其中一滴液体 （16）在所述衬垫组件（32,50）上具有小于或等于15°的静态接触角，在所述紫外线处理之后，所述层（28,48）上的静态接触角大于或等于 至100°。

公开(公告)号：US12046571B2

公开(公告)日：2024-07-23

申请号：US18058693

申请日：2022-11-23

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Jeremy Alfred Theil ,  Liang Wang ,  Rajesh Katkar ,  Guilian Gao ,  Laura Wills Mirkarimi

IPC分类号： H01L23/00

CPC分类号： H01L24/26 ,  H01L24/03 ,  H01L24/09 ,  H01L24/27 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/08257 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028

摘要： Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

公开(公告)号：US20230268307A1

公开(公告)日：2023-08-24

申请号：US18058693

申请日：2022-11-23

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Jeremy Alfred Theil ,  Liang Wang ,  Rajesh Katkar ,  Guilian Gao ,  Laura Wills Mirkarimi

IPC分类号： H01L23/00

CPC分类号： H01L24/26 ,  H01L24/83 ,  H01L24/09 ,  H01L24/30 ,  H01L24/27 ,  H01L24/03 ,  H01L2924/01025 ,  H01L2224/08257 ,  H01L2924/01028 ,  H01L2924/01027

摘要： Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

公开(公告)号：US09666557B2

公开(公告)日：2017-05-30

申请号：US13905194

申请日：2013-05-30

申请人： Infineon Technologies AG

发明人： Tian San Tan ,  Theng Chao Long

IPC分类号： H01L23/34 ,  H01L25/065 ,  H01L23/00 ,  H01L23/051 ,  H01L23/36 ,  H05K1/02 ,  H05K1/18

CPC分类号： H01L25/065 ,  H01L23/051 ,  H01L23/34 ,  H01L23/36 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/04 ,  H01L2224/06181 ,  H01L2224/06183 ,  H01L2224/08237 ,  H01L2224/08257 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73151 ,  H01L2224/73251 ,  H01L2224/80898 ,  H01L2224/83191 ,  H01L2224/83815 ,  H01L2224/922 ,  H01L2224/9221 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/181 ,  H05K1/0209 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/10454 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05 ,  H01L2224/29 ,  H01L2224/80 ,  H01L2924/00012

摘要： A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a semiconductor die, first and second terminals, and a mold compound. The die has opposing first and second main surfaces, an edge disposed perpendicular to the first and second main surfaces, a first electrode at the first main surface, and a second electrode at the second main surface. The first terminal is attached to the first electrode. The second terminal is attached to the second electrode. The mold compound encloses at least part of the die and the first and second terminals so that each of the terminals has a side parallel with and facing away from the die that remains at least partly uncovered by the mold compound. The first and second terminals of the semiconductor package are connected to different ones of the electrically conductive regions of the substrate.

公开(公告)号：US20140353766A1

公开(公告)日：2014-12-04

申请号：US13905194

申请日：2013-05-30

申请人： Infineon Technologies AG

发明人： Tian San Tan ,  Theng Chao Long

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/34

CPC分类号： H01L25/065 ,  H01L23/051 ,  H01L23/34 ,  H01L23/36 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/04 ,  H01L2224/06181 ,  H01L2224/06183 ,  H01L2224/08237 ,  H01L2224/08257 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73151 ,  H01L2224/73251 ,  H01L2224/80898 ,  H01L2224/83191 ,  H01L2224/83815 ,  H01L2224/922 ,  H01L2224/9221 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/181 ,  H05K1/0209 ,  H05K1/181 ,  H05K2201/10166 ,  H05K2201/10454 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05 ,  H01L2224/29 ,  H01L2224/80 ,  H01L2924/00012

摘要： A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a semiconductor die, first and second terminals, and a mold compound. The die has opposing first and second main surfaces, an edge disposed perpendicular to the first and second main surfaces, a first electrode at the first main surface, and a second electrode at the second main surface. The first terminal is attached to the first electrode. The second terminal is attached to the second electrode. The mold compound encloses at least part of the die and the first and second terminals so that each of the terminals has a side parallel with and facing away from the die that remains at least partly uncovered by the mold compound. The first and second terminals of the semiconductor package are connected to different ones of the electrically conductive regions of the substrate.

摘要翻译： 半导体组件包括具有导电区域的衬底和半导体封装。 半导体封装包括半导体管芯，第一和第二端子以及模具化合物。 模具具有相对的第一和第二主表面，垂直于第一和第二主表面设置的边缘，在第一主表面处的第一电极和在第二主表面处的第二电极。 第一端子附接到第一电极。 第二端子附接到第二电极。 模具化合物包围模具和第一和第二端子的至少一部分，使得每个端子具有与模具化合物保持至少部分未覆盖的模具平行并远离模具的一侧。 半导体封装的第一和第二端子连接到衬底的不同的导电区域。