Abstract:
The present application describes novel barbituric acid derivatives of formula I: or pharmaceutically acceptable salt or prodrug forms thereof, wherein A, B, L, R1, R2, R3, R4, R5, n, W, U, X, Y, Z, Ua, Xa, Ya, and Za are defined in the present specification, which are useful as TNF-α converting enzyme (TACE) and matrix metalloproteinases (MMP) inhibitors.
Abstract:
An improved hair brush having a prism shaped brush head, such as a cylindrical brush head, with spaced apart brush tips or tufts of bristles distributed around a portion of the 360° of the outer surface. The spaced apart brush tips or bristles may be present in only ⅓ (i.e. 120°) to ½ (i.e. 180°) of the entire outer surface, or it may cover more or less than this range to improve the smoothing or curling of a user's hair. Each tuft of bristles may have different lengths and randomly be directed at different directions.
Abstract:
Disclosed are compounds of formula (I) and pharmaceutically acceptable salts thereof. The compounds of formula (I) inhibit tyrosine kinase activity of JAK3, thereby making them useful for the treatment of inflammatory and autoimmune diseases.
Abstract:
The present invention provides compounds of formula I and pharmaceutically acceptable salts thereof. The formula I compounds inhibit tyrosine kinase activity of JAK3, thereby making them useful for the treatment of inflammatory and autoimmune diseases.
Abstract:
Compounds having the formula (I), and enantiomers, and diastereomers, pharmaceutically-acceptable salts, thereof, (I) are useful as kinase modulators, including Btk modulation, wherein A1, A2, A3, R4 are as defined herein.
Abstract:
Disclosed are compounds of Formula (I), and pharmaceutically acceptable salts thereof. The compounds of formula (I) inhibit tyrosine kinase activity of JAK3, thereby making them useful for the treatment of inflammatory and autoimmune diseases.
Abstract:
A MOS transistor (60, 62) is provided. The structure of the transistor (60, 62) includes: a semiconductor substrate (10), a channel area (20, 24), source/drain regions (22, 26), a gate (30, 32), a gate insulating layer (11), a shallow trench isolation region (12), a passive layer (50, 52), and holes (40, 42) formed with a certain distance to the gate insulating layer (11). Wherein both the shapes of the holes (40, 42) and the Young's modulus' difference between the material in the holes (40, 42) and that around the holes (40, 42) contribute to the stress concentration effect, thus the stress in the channel area (20, 24) is enhanced. The structure of the transistor (60, 62) can greatly reduce the stress attenuation during the transmission from stress resource to the sensitive region, and concentrate the stress in the sensitive region. The structure can be involved in large size device, especially.
Abstract:
A consecutive molding method for crystallized glass comprises: a process to obtain molten glass by melting glass raw materials; a process to obtain a band-shaped plate glass by roll forming the molten glass; a crystallization process to obtain a band-shaped crystallized glass plate by conducting thermal treatment on the band-shaped plate glass to crystallize it; and a process to cut the band-shaped crystallized glass plate, wherein the crystallization process includes: a process to form crystal nuclei in the band-shaped plate glass by disposing it in the atmosphere of a crystal nucleus-formation temperature and retaining it at the temperature; a process to raise the temperature of the band-shaped plate glass with crystal nuclei to a crystal-growth temperature; a process to retain the band-shaped plate glass with crystal nuclei at the crystal-growth temperature to produce a band-shaped crystallized glass plate; and a process to slowly cool down the band-shaped crystallized glass plate.
Abstract:
A consecutive molding method for crystallized glass comprises: a melting process to obtain molten glass by melting glass raw materials; a molding process to obtain a band-shaped plate glass by roll forming the molten glass to become band-shaped; a crystallization process to obtain a band-shaped crystallized glass plate by conducting thermal treatment on the band-shaped plate glass to crystallize it; and a cutting process to cut the band-shaped crystallized glass plate, wherein the crystallization process includes: a temperature-raising process to produce the band-shaped crystallized glass plate by disposing the band-shaped plate glass obtained in the molding process, in the atmosphere of a crystal nucleus-formation temperature and raising the temperature to a crystal-growth temperature or above to grow crystals as well as form crystal nuclei; and a slow-cooling process to slowly cool down the band-shaped crystallized glass plate.
Abstract:
Novel non-steroidal compounds are provided which are useful in treating diseases or disorders associated with modulation of the glucocorticoid receptor, AP-1, and/or NF-κB activity, including metabolic and inflammatory and immune diseases or disorders, having the structure of formula (I): an enantiomer, diastereomer, or taυtomer thereof, or a prodrug ester thereof, or a pharmaceutically-acceptable salt thereof, in which: Z is heterocyclo or heteroaryl; •A is a S- to 8-membered carbocyclic ring or a S- to 8-membered heterocyclic ring; B1 and B2 rings are pyridyl rings, wherein the B1 and B2 rings are each fused to the A ring and the B1 ring is optionally substituted by one to three groups which are the same or different and are independently selected from R1, R2, and R4, and the B2 ring is optionally substituted by one to three groups which are the same or different and are independently selected from R5, R7, and R3 J1, J2, and J3 are at each occurrence the same or different and are independently -A1QA2-; Q is a bond, O, S, S(O), or S(O)2; A1 and A2 are the same or different and are at each occurrence independently selected from a bond, C1-3 alkylene, substituted C1-3 alkylene, C2-4 alkenylene, and substituted C2-4 alkenylene, provided that A1 and A2 are chosen so that ring A is a 5- to 8-membered carbocyclic or heterocyclic ring; R1 to R11 are as defined herein.