公开(公告)号：US20130134520A1

公开(公告)日：2013-05-30

申请号：US13611759

申请日：2012-09-12

申请人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

发明人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

IPC分类号： H01L27/088

CPC分类号： H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

摘要翻译： 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。

公开(公告)号：US08293604B2

公开(公告)日：2012-10-23

申请号：US12838826

申请日：2010-07-19

申请人： Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

发明人： Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/115 ,  H01L27/11568 ,  H01L28/91 ,  H01L29/66833 ,  H01L29/7926

摘要： Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.

摘要翻译： 垂直沟道半导体器件包括具有上表面的柱的半导体衬底。 绝缘栅电极围绕柱的周边。 绝缘栅电极具有比柱的上表面低的垂直级的上表面，以使绝缘栅电极与柱的上表面垂直间隔开。 第一源极/漏极区域在与衬底相邻的衬底中。 第二源极/漏极区域设置在包括柱的上表面的柱的上部区域中。 接触焊盘接触柱的整个上表面以电连接到第二源/漏区。

公开(公告)号：US20120146061A1

公开(公告)日：2012-06-14

申请号：US13276218

申请日：2011-10-18

申请人： Kie Hyun Nam ,  Sang-Soo Kim ,  Choong-Ho Lee ,  Jung-Min Lee

发明人： Kie Hyun Nam ,  Sang-Soo Kim ,  Choong-Ho Lee ,  Jung-Min Lee

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3276 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5259 ,  H01L2251/55 ,  H01L2251/558

摘要： A large size organic light emitting diode (OLED) display and manufacturing method thereof are disclosed. In one embodiment, the method includes i) forming a display unit including a plurality of pixels on a substrate, ii) forming a getter layer, a bonding layer and a conductive contact layer around the display unit and iii) manufacturing a sealing member including a flexible polymer film and a metal layer formed on at least one side of the polymer film. The method may further include laminating the sealing member on the substrate using a roll lamination process such that the metal layer contacts the conductive contact layer and curing the contact layer and the conductive contact layer.

摘要翻译： 公开了一种大尺寸有机发光二极管（OLED）显示器及其制造方法。 在一个实施例中，该方法包括：i）在衬底上形成包括多个像素的显示单元，ii）在显示单元周围形成吸气剂层，接合层和导电接触层，以及iii）制造密封构件， 柔性聚合物膜和在聚合物膜的至少一侧上形成的金属层。 该方法可以进一步包括使用卷层压工艺将密封构件层压在基板上，使得金属层接触导电接触层并固化接触层和导电接触层。

公开(公告)号：US20120061131A1

公开(公告)日：2012-03-15

申请号：US13208573

申请日：2011-08-12

申请人： Choong-Ho Lee ,  Jung-Min Lee ,  Kie-Hyun Nam

发明人： Choong-Ho Lee ,  Jung-Min Lee ,  Kie-Hyun Nam

IPC分类号： H05K1/03 ,  B32B38/04

CPC分类号： B32B15/08 ,  B32B3/08 ,  B32B3/266 ,  B32B2262/101 ,  B32B2262/106 ,  B32B2457/00 ,  H01L51/0001 ,  H01L51/524

摘要： A method of manufacturing an encapsulation substrate for an organic light emitting diode display, includes fabricating a composite panel by forming an uncured carbon fiber resin portion having a plate shape and including an upper surface and a lower surface and forming an uncured insulating resin portion arranged to surround edges of the carbon fiber resin portion, the uncured insulating resin portion being perforated by a plurality of penetration holes, inserting a plurality of conductive components into corresponding ones of the plurality of penetration holes, covering upper and lower surfaces of the composite panel with metal films and bonding the metal films to the composite panel while simultaneously curing the carbon fiber resin and the insulating resin portion by applying heat and pressure to the composite panel. Therefore, fabrication processes of the encapsulation substrate are simple, and fabrication costs are reduced.

摘要翻译： 一种制造有机发光二极管显示器的封装基板的方法包括：通过形成具有板状并且包括上表面和下表面的未固化碳纤维树脂部分来制造复合板，并形成未固化的绝缘树脂部分，其布置成 碳纤维树脂部分的环绕边缘，未固化的绝缘树脂部分被多个穿透孔穿孔，将多个导电部件插入到多个穿透孔中的相应的穿孔中，用金属覆盖复合板的上表面和下表面 并且通过向复合板施加热和压力同时使碳纤维树脂和绝缘树脂部分固化，同时将金属膜粘合到复合板上。 因此，封装基板的制造工艺简单，制造成本降低。

公开(公告)号：US20120026074A1

公开(公告)日：2012-02-02

申请号：US13064721

申请日：2011-04-11

申请人： Choong-Ho Lee ,  Kie Hyun Nam ,  Jung-Min Lee

发明人： Choong-Ho Lee ,  Kie Hyun Nam ,  Jung-Min Lee

IPC分类号： G09G3/30

CPC分类号： H01L51/5237 ,  H01L27/3276 ,  H01L51/524 ,  H01L51/5243 ,  H01L51/5246

摘要： A display device includes: a display substrate; a display unit formed on the display substrate and a sealing substrate affixed to the display substrate by an adhering layer that surrounds the display unit. The sealing substrate includes a composite member including a resin and a plurality of carbon fibers and an insulating member attached to the composite member. The insulating member includes a through hole. A metal film is disposed at one side of the sealing substrate, facing the display substrate; and a conductive connection portion contact the metal film through the through hole.

摘要翻译： 显示装置包括：显示基板; 形成在显示基板上的显示单元和通过围绕显示单元的粘合层固定到显示基板的密封基板。 密封基板包括复合构件，该复合构件包括树脂和多个碳纤维以及连接到复合构件的绝缘构件。 绝缘构件包括通孔。 金属膜设置在密封基板的面向显示基板的一侧; 并且导电连接部分通过通孔与金属膜接触。

公开(公告)号：US20110289809A1

公开(公告)日：2011-12-01

申请号：US13004527

申请日：2011-01-11

申请人： Choong-Ho LEE ,  Jung-Min LEE ,  Kie-Hyun NAM

发明人： Choong-Ho LEE ,  Jung-Min LEE ,  Kie-Hyun NAM

IPC分类号： A47G1/06

CPC分类号： G09F9/30 ,  G09F9/33 ,  G09F9/35 ,  H01L51/524 ,  H01L51/5243 ,  H04N5/64

摘要： A display apparatus including: a display unit disposed on a substrate; an encapsulation unit facing the display unit, the encapsulation unit including: a metal layer; a complex member; and a reinforcement member formed on an upper surface of the complex member; and a sealing unit disposed between the substrate and the encapsulation unit and apart from the display unit to bond the substrate and the encapsulation unit to the sealing unit.

摘要翻译： 一种显示装置，包括：显示单元，设置在基板上; 面向所述显示单元的封装单元，所述封装单元包括：金属层; 一个复杂的成员; 以及形成在复合构件的上表面上的加强构件; 以及密封单元，其设置在所述基板和所述封装单元之间并且与所述显示单元分离以将所述基板和所述封装单元接合到所述密封单元。

公开(公告)号：US08044453B2

公开(公告)日：2011-10-25

申请号：US12318451

申请日：2008-12-30

申请人： Suk-Kang Sung ,  Choong-Ho Lee ,  Dong-Uk Choi ,  Hee-Soo Kang

发明人： Suk-Kang Sung ,  Choong-Ho Lee ,  Dong-Uk Choi ,  Hee-Soo Kang

IPC分类号： H01L29/792

CPC分类号： H01L27/11568

摘要： A non-volatile memory device includes field insulating layer patterns on a substrate to define an active region of the substrate, upper portions of the field insulating layer patterns protruding above an upper surface of the substrate, a tunnel insulating layer on the active region, a charge trapping layer on the tunnel insulating layer, a blocking layer on the charge trapping layer, first insulating layers on upper surfaces of the field insulating layer patterns, and a word line structure on the blocking layer and first insulating layers.

摘要翻译： 非易失性存储器件包括在衬底上的场绝缘层图案，以限定衬底的有源区，场绝缘层图案的上部突出在衬底的上表面上，在有源区上的隧道绝缘层， 隧道绝缘层上的电荷俘获层，电荷俘获层上的阻挡层，场绝缘层图案的上表面上的第一绝缘层，以及阻挡层和第一绝缘层上的字线结构。

公开(公告)号：US20110123707A1

公开(公告)日：2011-05-26

申请号：US12950361

申请日：2010-11-19

申请人： Choong-Ho LEE ,  Jung-Min Lee ,  Jun-Sik Oh

发明人： Choong-Ho LEE ,  Jung-Min Lee ,  Jun-Sik Oh

IPC分类号： B05D5/06 ,  C23C16/00

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/26 ,  C23C16/455 ,  C23C16/46 ,  H01L51/0008 ,  H01L51/5012 ,  H01L51/56 ,  H05B33/10

摘要： A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

摘要翻译： 一种薄膜沉积设备，包括：沉积源，其具有用于容纳沉积材料的坩埚和用于加热和蒸发沉积材料的加热器; 沿着第一方向设置在所述沉积源的一侧的喷嘴单元，并且具有多个喷嘴狭缝以排出被蒸发的沉积材料; 多个排放系数增加单元，其设置在所述沉积源内的所述喷嘴单元处，并且增加朝向所述喷嘴单元排出的所述沉积材料的运动量; 与所述喷嘴单元相对设置并具有沿着所述第一方向布置的多个图案化狭缝的图案化缝隙片; 以及沿着第一方向设置在喷嘴单元和图案化缝隙片之间的阻挡板组件，并且具有将喷嘴单元和图案化缝隙片之间的空间分隔成多个次沉积空间的多个阻挡板。

公开(公告)号：US07939408B2

公开(公告)日：2011-05-10

申请号：US12970475

申请日：2010-12-16

申请人： Byung-yong Choi ,  Dong-gun Park ,  Yun-gi Kim ,  Choong-ho Lee ,  Young-mi Lee ,  Hye-jin Cho

发明人： Byung-yong Choi ,  Dong-gun Park ,  Yun-gi Kim ,  Choong-ho Lee ,  Young-mi Lee ,  Hye-jin Cho

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/7887 ,  H01L29/7923

摘要： A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

摘要翻译： 提供了一种用于2位操作的非易失性存储器件及其制造方法。 非易失性存储器件包括在半导体衬底上沿着字线方向延伸的有源区和栅极，并且重复地交叉; 电荷存储层，设置在所述栅极的下方，并限制在所述栅极和所述有源区域交叉的部分; 形成在电荷存储层上的电荷阻挡层; 形成在电荷存储层下面的隧道介电层; 在由栅极暴露的有源区中形成的第一和第二源/漏区; 以及与字线方向交叉的第一和第二位线。 有源区可以形成为第一之字形图案和/或栅极可以以与第一曲折图案对称的第二曲折图案形成。

公开(公告)号：US20110086483A1

公开(公告)日：2011-04-14

申请号：US12970475

申请日：2010-12-16

申请人： Byung-yong Choi ,  Dong-gun Park ,  Yun-gi Kim ,  Choong-ho Lee ,  Young-mi Lee ,  Hye-jin Cho

发明人： Byung-yong Choi ,  Dong-gun Park ,  Yun-gi Kim ,  Choong-ho Lee ,  Young-mi Lee ,  Hye-jin Cho

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/7887 ,  H01L29/7923

摘要： A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

摘要翻译： 提供了一种用于2位操作的非易失性存储器件及其制造方法。 非易失性存储器件包括在半导体衬底上沿着字线方向延伸的有源区和栅极，并且重复地交叉; 电荷存储层，设置在所述栅极的下方，并限制在所述栅极和所述有源区域交叉的部分; 形成在电荷存储层上的电荷阻挡层; 形成在电荷存储层下面的隧道介电层; 在由栅极暴露的有源区中形成的第一和第二源/漏区; 以及与字线方向交叉的第一和第二位线。 有源区可以形成为第一之字形图案和/或栅极可以以与第一曲折图案对称的第二曲折图案形成。