公开(公告)号：US06916680B2

公开(公告)日：2005-07-12

申请号：US10720479

申请日：2003-11-25

Applicant: Jae Suk Lee ,  Dae Heok Kwon

Inventor： Jae Suk Lee ,  Dae Heok Kwon

IPC: H01L27/14 ,  H01L21/00 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/335 ,  H04N5/369

CPC classification number: H01L27/14685 ,  H01L27/14627

Abstract: A method for fabricating an image sensor comprises forming an over coat layer on an upper face of a semiconductor substrate on which a color filter layer is formed, forming a microlens on the over coat layer; covering the microlens with a protection layer, back grinding a lower face of the semiconductor substrate, and removing the protection layer of the microlens. In this method, the protection layer is formed on the microlens of an image sensor and is subsequently removed after back grinding.

Abstract translation: 一种用于制造图像传感器的方法，包括在其上形成滤色器层的半导体衬底的上表面上形成覆盖层，在覆盖层上形成微透镜; 用保护层覆盖微透镜，背面研磨半导体衬底的下表面，以及去除微透镜的保护层。 在该方法中，保护层形成在图像传感器的微透镜上，随后在后研磨之后被去除。

公开(公告)号：US20050090092A1

公开(公告)日：2005-04-28

申请号：US10972189

申请日：2004-10-22

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/31 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76837

Abstract: Semiconductor devices and methods of fabricating the same are disclosed. A disclosed method comprises: partially forming a first gate stack; partially forming a second gate stack adjacent the first gate stack; forming a first interlayer dielectric; and completing the formation of the first and second gate stacks after the first interlayer dielectric has filled a distance between the first and second gate electrodes.

Abstract translation: 公开了半导体器件及其制造方法。 所公开的方法包括：部分地形成第一栅极堆叠; 部分地形成与所述第一栅极堆叠相邻的第二栅极堆叠; 形成第一层间电介质; 以及在第一层间电介质填充第一和第二栅电极之间的距离之后完成第一和第二栅极叠层的形成。

公开(公告)号：US06545159B2

公开(公告)日：2003-04-08

申请号：US09925685

申请日：2001-08-10

Applicant: Jae-Suk Lee ,  Jun-Hwan Ahn ,  Young-Sun Cho ,  Nam-Goo Kang ,  Hye-Kyong Lee

Inventor： Jae-Suk Lee ,  Jun-Hwan Ahn ,  Young-Sun Cho ,  Nam-Goo Kang ,  Hye-Kyong Lee

IPC: C07D21324

CPC classification number: C07D213/06 ,  C08F12/32

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic:

Abstract translation: 本发明涉及乙烯基苯基单体和由其制备的聚合物。 更具体地说，本发明提供由式（1）表示的乙烯基苯基单体，它们由于苯基的共振作用和改变的特性而能够进行各种聚合，如自由基聚合，阳离子聚合，阴离子聚合和金属茂催化聚合 因此，适合于通过与具有光学特性的金属组分形成络合物而可用于光功能材料的通用聚合物的合成：

公开(公告)号：US5308704A

公开(公告)日：1994-05-03

申请号：US933358

申请日：1992-08-19

Applicant: Yoshiaki Suzuki ,  Masahiro Kusakabe ,  Jae-Suk Lee ,  Makoto Kaibara ,  Masaya Iwaki ,  Hiroyuki Sasabe

Inventor： Yoshiaki Suzuki ,  Masahiro Kusakabe ,  Jae-Suk Lee ,  Makoto Kaibara ,  Masaya Iwaki ,  Hiroyuki Sasabe

IPC: A61L26/00 ,  B29C35/08 ,  B29C59/16 ,  C08J7/00 ,  C12M1/22 ,  C12M1/40 ,  B32B17/00

CPC classification number: B29C59/16 ,  B29C2035/0872 ,  B29K2025/00 ,  B29K2075/00 ,  Y10T428/315 ,  Y10T428/31551 ,  Y10T428/31855

Abstract: A cell adhesive material with excellent cell adhesion and cell proliferating property and a method for producing the same are provided. The adhesion and proliferation of cells can be improved remarkably by the surface modification of a cell adhesive material comprising a polymer material containing carbon as a constituting element, such as polystyrene or segmented polyurethane, wherein at least a part of the surface is modified by ion bombardment through ion implantation. The method for producing such cell adhesive material comprises implanting ions into at least a part of the surface of the polymer material. The cell adhesive material and the method for producing the same are promising for application to cell culture petri dishes and hybrid-type medicinal materials.

Abstract translation: 提供了具有优异的细胞粘附性和细胞增殖性的细胞粘合剂材料及其制造方法。 通过包含含有碳作为构成元素的聚合物材料如聚苯乙烯或分段聚氨酯的电池粘合剂材料的表面改性，可以显着改善电池的粘附和增殖，其中表面的至少一部分被离子轰击 通过离子注入。 制造这种电池粘合剂材料的方法包括将离子注入到聚合物材料表面的至少一部分中。 细胞粘合剂材料及其制备方法有望用于细胞培养培养皿和混合型药物。

公开(公告)号：US20160241306A1

公开(公告)日：2016-08-18

申请号：US15017949

申请日：2016-02-08

Applicant: Byeong-Taek MOON ,  Jae-Suk LEE ,  Il-Jong SONG ,  Young-Ki LEE ,  Yo-Han JANG

Inventor： Byeong-Taek MOON ,  Jae-Suk LEE ,  Il-Jong SONG ,  Young-Ki LEE ,  Yo-Han JANG

IPC: H04B5/00 ,  H01Q7/00 ,  H01Q1/27 ,  H01Q1/22

CPC classification number: H01Q1/273 ,  H01Q1/2208 ,  H01Q7/00 ,  H04B5/0075

Abstract: In one embodiment, the antenna arrangement includes a primary antenna having a conductive sidewall; and a loop antenna disposed in and physically separated from the primary antenna. The loop antenna includes a first conductive loop and a capacitor electrically connected between ends of the first conductive loop.

Abstract translation: 在一个实施例中，天线装置包括具有导电侧壁的主天线; 以及设置在主天线中并在物理上与主天线分离的环形天线。 环形天线包括第一导电回路和电连接在第一导电回路的端部之间的电容器。

公开(公告)号：US20120138917A1

公开(公告)日：2012-06-07

申请号：US13389697

申请日：2010-08-10

Applicant: Jae-Suk Lee ,  Nam-Goo Kang

Inventor： Jae-Suk Lee ,  Nam-Goo Kang

IPC: H01L51/54 ,  C08F230/04 ,  C07F15/00

CPC classification number: C07F15/004 ,  C07F15/0033 ,  C08F130/04 ,  C08F220/36 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/1059 ,  C09K2211/1466 ,  C09K2211/185

Abstract: Provided are a blue-light-emitting iridium complex, an iridium complex monomer, a phosphorescent polymer, and an organic electroluminescent device using same. The blue-light-emitting iridium complex contains a ligand having a low electron density structure, such as triazole or tetrazole. The iridium complex monomer containing a ligand having a polymerizable vinyl group produces a blue phosphorescent polymer through the polymerization with carbazole derivatives. The organic electroluminescent device comprises a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode, wherein the light-emitting layer contains the above-described iridium complex or polymer containing the iridium complex.

Abstract translation: 提供蓝色发光铱络合物，铱络合物单体，磷光聚合物和使用其的有机电致发光器件。 蓝色发光铱络合物包含具有低电子密度结构的配体，例如三唑或四唑。 含有可聚合乙烯基的配体的铱络合物单体通过与咔唑衍生物的聚合产生蓝色磷光聚合物。 有机电致发光器件包括第一电极，第二电极和介于第一电极和第二电极之间的发光层，其中发光层含有上述铱络合物或含有铱络合物的聚合物。

公开(公告)号：US20110124820A1

公开(公告)日：2011-05-26

申请号：US12992534

申请日：2008-05-15

Applicant: Jae-Suk Lee ,  Changej Mohammad ,  Haeng-Deog Koh ,  Samal Shashadhar ,  Nam-Goo Kang ,  Won-Jung Shin ,  Young-Jae Kim

Inventor： Jae-Suk Lee ,  Changej Mohammad ,  Haeng-Deog Koh ,  Samal Shashadhar ,  Nam-Goo Kang ,  Won-Jung Shin ,  Young-Jae Kim

IPC: C08F226/06

CPC classification number: C08G61/123 ,  C08F297/00 ,  C08G61/122 ,  C08G61/126 ,  H01L51/0043

Abstract: Provided is a crystalline organic polymer in which a main chain formed of amorphous polymer or monomer having a functional group is combined with a side chain by quaternization, cross-linking, hydrogen bonding or organic material-metal interaction. The main chain material having a functional group is combined with the side chain material to have crystallinity, and the organic polymer having crystallinity exhibits excellent diode characteristics.

Abstract translation: 提供了一种结晶有机聚合物，其中由无定形聚合物形成的主链或具有官能团的单体通过季铵化，交联，氢键或有机材料 - 金属相互作用与侧链结合。 具有官能团的主链材料与侧链材料结合以具有结晶度，并且具有结晶度的有机聚合物表现出优异的二极管特性。

公开(公告)号：US07670948B2

公开(公告)日：2010-03-02

申请号：US11559724

申请日：2006-11-14

Applicant: Jae Suk Lee

Inventor： Jae Suk Lee

IPC: H01L21/4763 ,  H01L23/48

CPC classification number: H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76865

Abstract: Embodiments of a semiconductor device and a method of fabricating the same may include an insulating layer formed on a substrate and having a predetermined hole, a metal interconnection formed in the hole and protruding relative to the insulating layer, a first barrier extending in a lateral direction of the metal interconnection, a second barrier formed on the metal interconnection, and a metal pad formed on the second barrier.

Abstract translation: 半导体器件及其制造方法的实施例可以包括形成在基板上并具有预定孔的绝缘层，形成在孔中并相对于绝缘层突出的金属互连，沿横向延伸的第一屏障 的金属互连，形成在金属互连上的第二屏障，以及形成在第二屏障上的金属焊盘。

公开(公告)号：US07622540B2

公开(公告)日：2009-11-24

申请号：US11819630

申请日：2007-06-28

Applicant: Jae-Suk Lee ,  Hee-Soo Yoo ,  Shahinur Rahman

Inventor： Jae-Suk Lee ,  Hee-Soo Yoo ,  Shahinur Rahman

IPC: C08G18/22 ,  C07C65/32

CPC classification number: C08G18/02

Abstract: Disclosed herein is a metal enolate initiator for polymerizing isocyanates and a method for polymerizing isocyanates by anionic polymerization using the same, in which the initiator forms a cluster upon the initiation and protects stability of terminal anions at the end of the chain to cause controlled polymerization, thus preventing depolymerizaton and improving reaction time and efficiency without the use of a separate additive.

Abstract translation: 本文公开了用于聚合异氰酸酯的金属烯醇化物引发剂和通过使用该异氰酸酯的阴离子聚合使异氰酸酯聚合的方法，其中引发剂在起始时形成簇并保护链端部末端阴离子的稳定性以引起受控聚合， 从而防止解聚和提高反应时间和效率而不使用单独的添加剂。

公开(公告)号：US20080315425A1

公开(公告)日：2008-12-25

申请号：US12198730

申请日：2008-08-26

Applicant: Jae Suk LEE

Inventor： Jae Suk LEE

IPC: H01L23/48

CPC classification number: H01L21/76885 ,  H01L21/76837 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio.

Abstract translation: 公开了半导体器件及其制造方法。 所示的半导体器件制造方法包括在低氧化物层上形成钛和氮化钛（Ti / TiN）金属层; 在Ti / TiN金属层上形成铝金属层; 在所述铝金属层上形成氧化铟锡（ITO）层; 并通过光刻法形成ITO层，铝金属层和Ti / TiN金属层，以形成金属层图案，并露出低层氧化物层的表面，从而有助于填充相邻 通过产生具有减小的纵横比的金属层图案来形成金属层图案的线。