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    ADAPTIVE WRITING METHOD FOR HIGH-DENSITY OPTICAL RECORDING APPARATUS AND CIRCUIT THEREOF
    52.
    发明申请
    ADAPTIVE WRITING METHOD FOR HIGH-DENSITY OPTICAL RECORDING APPARATUS AND CIRCUIT THEREOF 有权
    适用于高密度光记录装置及其电路的自适应写入方法

    公开(公告)号：US20080239915A1

    公开(公告)日：2008-10-02

    申请号：US12122912

    申请日：2008-05-19

    Applicant: Jin-gyo Seo ,  Seong-sin Joo ,  Du-seop Yoon ,  Myung-do Roh ,  Yong-jin Ahn ,  Seoung-soo Kim ,  Kyung-geun Lee ,  Myeong-ho Cho ,  Chang-jin Yang ,  Jong-kyu Kim ,  Sung-ro Ko ,  Tatsuhiro Ohtsuka

    Inventor： Jin-gyo Seo ,  Seong-sin Joo ,  Du-seop Yoon ,  Myung-do Roh ,  Yong-jin Ahn ,  Seoung-soo Kim ,  Kyung-geun Lee ,  Myeong-ho Cho ,  Chang-jin Yang ,  Jong-kyu Kim ,  Sung-ro Ko ,  Tatsuhiro Ohtsuka

    IPC: G11B20/10

    CPC classification number: G11B7/00456 ,  G11B7/0062 ,  G11B7/00718 ,  G11B7/126 ,  G11B7/1267 ,  G11B20/10009

    Abstract: An adaptive writing method of a high-density optical recording apparatus and a circuit thereof. The circuit includes a discriminator for discriminating a magnitude of a present mark of input NRZI data and magnitudes of leading and/or trailing spaces of the input NRZI data, a generator for controlling the waveform of a write pulse in accordance with the magnitude of the present mark of the input NRZI data and the magnitudes of the leading and/or trailing spaces of the input NRZI data to generate an adaptive write pulse, and a driver for driving a light source by converting the adaptive write pulse into a current signal in accordance with driving power levels for respective channels of the adaptive write pulse. The widths of the first and/or last pulses of the write pulse waveform are varied in accordance with the magnitude of the present mark of input NRZI data and the magnitude of the leading and/or trailing spaces, thereby minimizing jitter to enhance system reliability and performance.

    Abstract translation: 一种高密度光记录装置的自适应写入方法及其电路。 该电路包括用于鉴别输入NRZI数据的当前标记的大小和输入NRZI数据的前导和/或尾随空间的大小的鉴别器，用于根据本发明的幅度控制写入脉冲的波形的发生器 输入NRZI数据的标记和输入NRZI数据的前导和/或尾部空间的大小以产生自适应写入脉冲;以及驱动器，用于通过将自适应写入脉冲转换为电流信号来驱动光源 驱动自适应写入脉冲的各个通道的功率电平。 写入脉冲波形的第一和/或最后脉冲的宽度根据输入NRZI数据的当前标记的大小和前导和/或尾随空格的大小而变化，从而最小化抖动以增强系统可靠性， 性能。

    Metal etching process and rework method thereof
    53.
    发明授权
    Metal etching process and rework method thereof 有权
    金属蚀刻工艺及其返工方法

    公开(公告)号：US07427569B2

    公开(公告)日：2008-09-23

    申请号：US11307801

    申请日：2006-02-23

    Applicant: Tza-Hao Wang ,  Jin-Yang Huang ,  Hung-Kwei Liao ,  Ming-Sheng Tung

    Inventor： Tza-Hao Wang ,  Jin-Yang Huang ,  Hung-Kwei Liao ,  Ming-Sheng Tung

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/32139 ,  H01L21/321 ,  H01L21/32135

    Abstract: A metal etching process is described. A substrate having a dielectric layer thereon is provided. An aluminum-copper alloy layer is formed on the dielectric layer. A hard mask layer is formed on the aluminum-copper alloy layer. A patterned photoresist layer is formed on the hard mask layer and then the hard mask layer is patterned. A thermal treatment process is performed. The thermal treatment process is carried out at a temperature of more than 300° C. for a period of at least 3 minutes. Thereafter, the aluminum-copper alloy layer is etched using the patterned hard mask layer as an etching mask. Due to the thermal treatment, the metal precipitate (CuAl2) within the aluminum-copper alloy layer is eliminated and hence the metal etching process is improved.

    Abstract translation: 描述金属蚀刻工艺。 提供其上具有介电层的基板。 在电介质层上形成铝 - 铜合金层。 在铝 - 铜合金层上形成硬掩模层。 在硬掩模层上形成图案化的光致抗蚀剂层，然后对硬掩模层进行图案化。 进行热处理工艺。 热处理过程在大于300℃的温度下进行至少3分钟的时间。 此后，使用图案化的硬掩模层作为蚀刻掩模蚀刻铝 - 铜合金层。 由于热处理，铝 - 铜合金层内的金属沉淀物（CuAl 2 N 2）被消除，因此改善了金属蚀刻工艺。

    Semiconductor module with heat sink and method thereof
    55.
    发明授权
    Semiconductor module with heat sink and method thereof 有权
    具有散热器的半导体模块及其方法

    公开(公告)号：US07345882B2

    公开(公告)日：2008-03-18

    申请号：US10958392

    申请日：2004-10-06

    Applicant: Hae-Hyung Lee ,  Sang-Wook Park ,  Joong-Hyun Baek ,  Jin-Yang Lee

    Inventor： Hae-Hyung Lee ,  Sang-Wook Park ,  Joong-Hyun Baek ,  Jin-Yang Lee

    IPC: H05K7/20 ,  H01L23/36

    CPC classification number: H01L23/427 ,  H01L23/3672 ,  H01L23/467 ,  H01L2924/0002 ,  H05K7/20509 ,  H01L2924/00

    Abstract: A semiconductor module, including a semiconductor device mounted on a printed circuit board (PCB), the PCB having an electrical connection to the semiconductor module, and a heat sink in direct contact with the semiconductor device, the heat sink being formed with a first end and a second end, the first end and the second end being formed with different heights, wherein the semiconductor module allows air flow to pass through the semiconductor module, radiating heat away from the heat sink. Another semiconductor module, including a semiconductor device mounted on a PCB, a heat sink in direct contact with the semiconductor device, the heat sink having a first portion and a second portion, wherein the first portion has a flat shape and is in direct contact with the semiconductor device and the second portion has a corrugated shape and is not in contact with the semiconductor device, wherein the semiconductor module allows air flow to pass through the semiconductor module, radiating heat away from the heat sink.

    Abstract translation: 一种半导体模块，包括安装在印刷电路板（PCB）上的半导体器件，具有与半导体模块的电连接的PCB以及与半导体器件直接接触的散热器，散热器形成有第一端 以及第二端，所述第一端和所述第二端形成有不同的高度，其中所述半导体模块允许空气流通过所述半导体模块，从所述散热器辐射热量。 另一个半导体模块，包括安装在PCB上的半导体器件，与半导体器件直接接触的散热器，散热器具有第一部分和第二部分，其中第一部分具有扁平形状并且直接与 半导体器件和第二部分具有波纹形状并且不与半导体器件接触，其中半导体模块允许空气流通过半导体模块，从散热器辐射热量。

    Non-volatile memory devices having a vertical channel and methods of manufacturing such devices
    56.
    发明申请
    Non-volatile memory devices having a vertical channel and methods of manufacturing such devices 有权
    具有垂直通道的非易失性存储器件和制造这种器件的方法

    公开(公告)号：US20080002475A1

    公开(公告)日：2008-01-03

    申请号：US11798563

    申请日：2007-05-15

    Applicant: Seung-Jin Yang ,  Hyok-ki Kwon ,  Yong-Seok Choi ,  Jeong-Uk Han

    Inventor： Seung-Jin Yang ,  Hyok-ki Kwon ,  Yong-Seok Choi ,  Jeong-Uk Han

    IPC: G11C11/34 ,  H01L21/336

    CPC classification number: H01L29/0692 ,  G11C16/0416 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

    Abstract: Disclosed are pairs of semiconductor flash memory cells including first and second source lines formed in a semiconductor substrate, semiconductor pillars extending from the substrate between the source lines, first and second charge storage structures formed on opposite side surfaces of the semiconductor pillar and separated by trench isolation structures. The x and y pitch separating adjacent semiconductor pillars in the memory cell array are selected whereby forming the trench isolation structures serves to separate both charge storage structures and conductive structures provided on opposite sides of a semiconductor pillars. Also disclosed are methods of fabricating such structures whereby the density of flash memory devices, particularly NOR flash memory devices, can be improved.

    Abstract translation: 公开了一种半导体闪存单元，包括形成在半导体衬底中的第一和第二源极线，从源极线之间的衬底延伸的半导体柱，形成在半导体柱的相对侧表面上并由沟槽分隔的第一和第二电荷存储结构 隔离结构。 选择分离存储单元阵列中的相邻半导体柱的x和y间距，由此形成沟槽隔离结构用于分离电荷存储结构和设置在半导体柱的相对侧上的导电结构。 还公开了制造这种结构的方法，由此可以提高闪存器件，特别是NOR闪存器件的密度。

    Optical pickup apparatus and optimal light spot focusing method
    59.
    发明授权
    Optical pickup apparatus and optimal light spot focusing method 有权
    光拾取装置和最佳光点聚焦法

    公开(公告)号：US07280458B2

    公开(公告)日：2007-10-09

    申请号：US10120786

    申请日：2002-04-12

    Applicant: Yong-jae Lee ,  Sung-ro Go ,  Pyong-yong Seong ,  Chang-jin Yang ,  Gi-bong Song ,  Byung-in Ma ,  Jong-koog Lee

    Inventor： Yong-jae Lee ,  Sung-ro Go ,  Pyong-yong Seong ,  Chang-jin Yang ,  Gi-bong Song ,  Byung-in Ma ,  Jong-koog Lee

    IPC: G11B7/95

    CPC classification number: G11B7/131 ,  G11B7/00718 ,  G11B7/094 ,  G11B7/0941 ,  G11B7/0943 ,  G11B7/0946 ,  G11B7/0956 ,  G11B7/1275 ,  G11B7/1353 ,  G11B7/1367 ,  G11B7/139 ,  G11B7/13922 ,  G11B2007/0006

    Abstract: An optical pickup apparatus includes a first light source to emit a first light beam having a predetermined wavelength, a first optical path changer to change a proceeding path of the first light beam, an objective lens to focus the first light beam on a recording medium, a diffraction member to divide the first light beam reflected by the recording medium into five light regions, the diffraction member having a first diffraction region having a wide width in a direction corresponding to a tangential direction of the recording medium and second through fifth diffraction regions sequentially arranged around the outside of the first diffraction region in a direction corresponding to a radial direction of the recording medium, and a first photodetector having first through fifth light receiving portions to receive the first light beam reflected by the recording medium.

    Abstract translation: 一种光拾取装置包括：发射具有预定波长的第一光束的第一光源;改变第一光束的行进路径的第一光路改变器;将第一光束聚焦在记录介质上的物镜; 衍射构件，用于将由记录介质反射的第一光束分成五个光区域，衍射构件具有在与记录介质的切线方向对应的方向上具有宽宽度的第一衍射区域和第二至第五衍射区域 在与所述记录介质的径向对应的方向上围绕所述第一衍射区域的外侧布置;以及第一光电检测器，具有第一至第五光接收部分，以接收由所述记录介质反射的所述第一光束。

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