公开(公告)号：US07858483B2

公开(公告)日：2010-12-28

申请号：US11154384

申请日：2005-06-15

Applicant: Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

Inventor： Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

IPC: H01L21/20

CPC classification number: H01L27/10814 ,  H01L27/10855 ,  H01L28/75 ,  H01L28/91

Abstract: A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion of the storage node plug by selectively etching the second insulation layer by using the etch stop layer; recessing a portion of the storage node plug exposed by the hole; forming a barrier metal layer on a surface of the recessed storage node plug; forming a storage node electrode connected to the storage node plug through the barrier metal layer in the hole; and forming a dielectric layer and a metal layer for a plate electrode sequentially on the storage node electrode.

Abstract translation: 一种形成半导体器件的电容器的方法包括在半导体衬底上形成具有存储节点插头的第一绝缘层; 在具有第一绝缘层的基板上依次形成蚀刻停止层和第二绝缘层; 通过使用所述蚀刻停止层选择性地蚀刻所述第二绝缘层，形成暴露所述存储节点插塞的一部分的孔; 使由孔露出的存储节点插头的一部分凹陷; 在所述凹形存储节点插塞的表面上形成阻挡金属层; 形成通过所述孔中的所述阻挡金属层与所述存储节点插头连接的存储节点电极; 以及在所述存储节点电极上依次形成用于平板电极的电介质层和金属层。

公开(公告)号：US07838414B2

公开(公告)日：2010-11-23

申请号：US11834264

申请日：2007-08-06

Applicant: Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

Inventor： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC: H01L21/4763

CPC classification number: H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

Abstract: A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Abstract translation: 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。

公开(公告)号：US20100174171A1

公开(公告)日：2010-07-08

申请号：US12376799

申请日：2007-08-09

Applicant: Kun Ho Lee ,  Yu Yong Choi ,  Kyung Jin Kim ,  Jong Min Lee

Inventor： Kun Ho Lee ,  Yu Yong Choi ,  Kyung Jin Kim ,  Jong Min Lee

IPC: A61B5/055

CPC classification number: A61B5/16 ,  G01R33/4806 ,  G06F19/00

Abstract: The present invention relates to a method for measuring human intelligence using a neurobiogical model. The invention provides a method which enables neurometric IQ to be measured by processing the MRI and fMRI images of subjects to determine cortical thicknesses and brain activation levels, determining structural IQ (sIQ) and functional IQ (fIQ) from the cortical thicknesses and the brain activation levels, and using the structural IQ (sIQ) and the functional IQ (fIQ) as predictors to measure the neurometric IQ of the subject. According to the present invention, the concept of a neurometric IQ (nIQ) model is established and can assist in easily assessing individual differences in general cognitive ability. These results suggest that general cognitive ability can be explained by two different neural bases or traits: facilitation of neural circuits and accumulation of crystallized knowledge.

Abstract translation: 本发明涉及一种使用神经生物学模型测量人类智力的方法。 本发明提供一种能够通过处理受试者的MRI和fMRI图像来测量神经测量IQ以确定皮层厚度和脑激活水平，从皮层厚度和脑激活确定结构性IQ（sIQ）和功能IQ（fIQ）的方法 水平，并使用结构性IQ（sIQ）和功能IQ（fIQ）作为预测因子来测量受试者的神经测量IQ。 根据本发明，建立了神经测量IQ（nIQ）模型的概念，并且可以帮助轻松评估一般认知能力中的个体差异。 这些结果表明，一般认知能力可以通过两种不同的神经基础或特征来解释：促进神经回路和结晶化知识的积累。

公开(公告)号：US20100133586A1

公开(公告)日：2010-06-03

申请号：US12463011

申请日：2009-05-08

Applicant: Byoung-Gue MIN ,  Jong-Min Lee ,  Seong-II Kim ,  Kyung-Ho Lee ,  Hyung-Sup Yoon ,  Eun-Soo Nam

Inventor： Byoung-Gue MIN ,  Jong-Min Lee ,  Seong-II Kim ,  Kyung-Ho Lee ,  Hyung-Sup Yoon ,  Eun-Soo Nam

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/42304 ,  H01L29/41708 ,  H01L29/66318 ,  H01L29/7371

Abstract: Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns.

Abstract translation: 提供了一种异质结双极晶体管及其形成方法。 该方法包括在发射极盖图案上形成发射电极，在基底图案上形成基极，在子集电极图案上形成集电极，将子集电极图案，基底图案，发射极图案和发射极封盖图案设置在 底物; 图案化保护绝缘层和覆盖发射电极，基极和集电极的第一虚拟图案，以暴露发射极，基极和集电极; 形成第二虚设图形以电分离发射电极，基极和集电极; 在设置有第二虚设图案的基板上形成连接到发射极的发射极电极互连，与基极连接的基极互连和与集电极连接的集电极互连; 以及去除第一和第二虚拟图案。

公开(公告)号：US07666738B2

公开(公告)日：2010-02-23

申请号：US11952767

申请日：2007-12-07

Applicant: Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

Inventor： Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

IPC: H01L21/8242

CPC classification number: H01L28/84 ,  H01L21/32155 ,  H01L28/91

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.

Abstract translation: 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。

公开(公告)号：US20090305495A1

公开(公告)日：2009-12-10

申请号：US12465013

申请日：2009-05-13

Applicant: Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

Inventor： Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/31144

Abstract: A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

Abstract translation: 半导体器件可以包括以锯齿形图案布置的插塞，电连接到插头的互连和插入在插头和互连之间的保护图案以选择性地暴露插头。 互连可以包括与由保护图案选择性地暴露的插头接触的连接部分。 制造半导体器件的方法包括：在形成模制图案和掩模图案之后，使用掩模图案选择性地蚀刻保护层以形成露出插头的保护图案。

公开(公告)号：US20090293556A1

公开(公告)日：2009-12-03

申请号：US12453839

申请日：2009-05-22

Applicant: Jong Min Lee ,  Young Ho Kim ,  Jae Hyun Kim ,  Sang Hoon Lee

Inventor： Jong Min Lee ,  Young Ho Kim ,  Jae Hyun Kim ,  Sang Hoon Lee

IPC: D06F37/00 ,  D06F35/00

CPC classification number: D06F39/022

Abstract: A washing machine according to an exemplary embodiment of the invention includes a body having a washing tub; a detergent bottle seating part provided over the body and having a detergent inlet through which a liquid detergent is entered, a detachable detergent bottle containing the liquid detergent being seated on the detergent bottle seating part; and a detergent storing part provided under the detergent bottle seating part, the liquid detergent contained in the detergent bottle being entered and stored in the detergent storing part by its weight.

Abstract translation: 根据本发明的示例性实施例的洗衣机包括具有洗涤桶的主体; 设置在身体上并具有洗涤剂入口的洗涤剂瓶座部分，通过该洗涤剂入口进入液体洗涤剂;容纳洗涤剂的可拆卸洗涤剂瓶位于洗涤剂瓶座部分上; 以及设置在洗涤剂瓶座部分下方的洗涤剂存储部分，洗涤剂瓶中所含的液体洗涤剂通过其重量进入并存储在洗涤剂存储部分中。

公开(公告)号：US20090288453A1

公开(公告)日：2009-11-26

申请号：US12453788

申请日：2009-05-21

Applicant: Jong Min LEE ,  Young Ho KIM ,  Jae Hyun KIM ,  Sang Hoon LEE

Inventor： Jong Min LEE ,  Young Ho KIM ,  Jae Hyun KIM ,  Sang Hoon LEE

IPC: D06F37/00

CPC classification number: D06F39/022

Abstract: A washing machine may include a cabinet; a washing tub which is disposed in the cabinet and in which a washing operation is performed; a liquid detergent supplier which contains and supplies a liquid detergent; a drawer-type container to which the liquid detergent supplier is coupled so as to be easily attachable and detachable and in which the liquid detergent supplier is contained; and a liquid detergent storage unit which is coupled to the drawer-type container, uniformly supplies the liquid detergent supplied by the liquid detergent supplier into the washing tub and detects whether the liquid detergent supplied by the liquid detergent supplier is stored therein.

Abstract translation: 洗衣机可以包括机柜; 洗涤桶，其设置在所述机壳中并进行洗涤操作; 液体洗涤剂供应商，其含有和供应液体洗涤剂; 一个抽屉式容器，液体洗涤剂供应器与该液体洗涤剂供应者联接以易于安装和拆卸，并且其中容纳液体洗涤剂供应者; 以及液体洗涤剂存储单元，其联接到抽屉式容器，将由液体洗涤剂供应的液体洗涤剂均匀地供应到洗涤桶中，并检测由液体洗涤剂供应商提供的液体洗涤剂是否被储存在其中。

公开(公告)号：US07471709B2

公开(公告)日：2008-12-30

申请号：US11390253

申请日：2006-03-28

Applicant: Jong-Min Lee

Inventor： Jong-Min Lee

IPC: H01S3/00

CPC classification number: H01S5/0683 ,  H04N1/40037

Abstract: An apparatus and method of controlling emission of a laser beam in an image forming apparatus. The method includes generating a first reference voltage and a second reference voltage corresponding to a normal mode and a toner save mode, supplying one of the first reference voltage and the second reference voltage corresponding to a mode selection signal in a switching manner, generating a first control voltage and second control voltage to control emission of the laser beam, and supplying a drive current corresponding to one of the generated first and second control voltages to a laser diode to control intensity of the laser beam according to the selection mode.

Abstract translation: 一种在图像形成装置中控制激光束的发射的装置和方法。 该方法包括产生对应于正常模式和调色剂节省模式的第一参考电压和第二参考电压，以切换方式提供对应于模式选择信号的第一参考电压和第二参考电压之一，产生第一参考电压 控制电压和第二控制电压以控制激光束的发射，并将与生成的第一和第二控制电压中的一个相对应的驱动电流提供给激光二极管，以根据选择模式控制激光束的强度。

公开(公告)号：US20080204707A1

公开(公告)日：2008-08-28

申请号：US12081675

申请日：2008-04-18

Applicant: Yoha Hwang ,  Sang Bae Lee ,  Jong Min Lee

Inventor： Yoha Hwang ,  Sang Bae Lee ,  Jong Min Lee

IPC: G01L1/24

CPC classification number: G01B11/18 ,  G01M11/085

Abstract: The present invention relates to a monitoring device for a rotating body, which can accurately measure signals from a fiber Bragg grating sensor provided on the rotating body by compensating a transmission loss variation and a distortion of the sensor signals. A rotation-side optical fiber has at least one deformation sensor at a portion thereof and a reference sensor at one end thereof. The sensors are made by forming a Bragg grating in the rotation-side optical fiber. A fixed-side optical fiber is mounted to the fixed body so as to be opposed to the one end of the rotation-side optical fiber. A signal processing unit detects a deformation of the rotating body by subtracting a signal corresponding to the light reflected from the reference sensor from a signal corresponding to the light reflected from the deformation sensor.

Abstract translation: 本发明涉及一种用于旋转体的监测装置，其可以通过补偿传输损耗变化和传感器信号的失真来精确地测量设置在旋转体上的光纤布拉格光栅传感器的信号。 旋转侧光纤在其一部分具有至少一个变形传感器，其一端具有基准传感器。 传感器通过在旋转侧光纤中形成布拉格光栅而制成。 固定侧光纤被安装到固定体上以与旋转侧光纤的一端相对。 信号处理单元从对应于从变形传感器反射的光的信号中减去与从基准传感器反射的光相对应的信号来检测旋转体的变形。