Abstract:
Low temperature discharge capability and high rate discharge capability are improved in an alkaline storage battery that uses as its negative electrode a hydrogen-absorbing alloy electrode employing hydrogen-absorbing alloy particles containing at least nickel and a rare-earth element. An alkaline storage battery uses as the negative electrode a hydrogen-absorbing alloy electrode employing hydrogen-absorbing alloy particles containing at least nickel and a rare-earth element. The hydrogen-absorbing alloy particles have a surface layer and an interior portion, the surface layer having a nickel content greater than that of the interior portion, and nickel particles having a particle size within a range of from 10 nm to 50 nm are present in the surface layer.
Abstract:
An alkaline storage battery provided with a positive electrode (1), a negative electrode (2), and an alkaline electrolyte solution employs a hydrogen-absorbing alloy containing: at least a rare-earth element, magnesium, nickel, and aluminum, the hydrogen-absorbing alloy being represented by the general formula Ln1-xMgxNiy-a-bAlaMb, where: Ln is at least one element selected from the group consisting of Ti, Zr, and a rare-earth element including Y; M is at least one element selected from the group consisting of V, Nb, Ta, Cr, Mo, Mn, Fe, Co, Ga, Zn, Sn, In, Cu, Si, P, B, and Zr; 0.05≦x≦0.35; 0.05≦a≦0.30; 0≦b≦0.5; 2.8≦y-a-b≦3.9; and the hydrogen-absorbing alloy having a main phase composed of a uniform metal phase with a uniform composition that has an area percentage of 60% or greater.
Abstract translation:设置有正极(1),负极(2)和碱性电解液的碱性蓄电池使用含有至少稀土元素镁,镍和铝的吸氢合金,氢 - 吸收合金由通式Ln表示1-x M x Ni x Y a N a N a > b <,其中:Ln是选自由Ti,Zr和包括Y的稀土元素组成的组中的至少一种元素; M是选自V,Nb,Ta,Cr,Mo,Mn,Fe,Co,Ga,Zn,Sn,In,Cu,Si,P,B和Zr中的至少一种元素; 0.05 <= x <= 0.35; 0.05 <= a <= 0.30; 0 <= b <= 0.5; 2.8 <= y-a-b <= 3.9; 以及具有均匀金属相的主相的吸氢合金,其具有面积百分比为60%以上的均匀组成。
Abstract:
Conductive balls are transferred from a pallet onto an array of conductive pads on a semiconductor chip by means of a transfer apparatus; the transfer apparatus includes a pallet formed with an array of recesses same in pattern as the array of conductive pads, a movable head formed with an array of vacuum holes and a driving mechanism for moving the head from an idle position onto the pallet and from the pallet to the semiconductor chip; when the head is moved to the pallet, the vacuum holes are connected to the recesses so as to confine the conductive balls in the narrow spaces; the vacuum is developed; then the conductive balls are traveled through the closed spaces to the vacuum holes; even if the conductive balls have been charged, the conductive balls are never attracted to the adjacent balls, and are surely captured by the vacuum holes.