公开(公告)号：US20060228648A1

公开(公告)日：2006-10-12

申请号：US11397526

申请日：2006-04-05

Applicant: Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Katsuhiro Kobayashi

Inventor： Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Katsuhiro Kobayashi

IPC: G03C1/00

CPC classification number: C07C309/12 ,  C07C381/12 ,  C07D307/64 ,  C07D307/68 ,  C07D333/46 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

Abstract: Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

Abstract translation: 磺酸盐具有下式：CF 3 -CH（OCOR）-CF 2 SO 3 SO 2 - 其中R是C 1 -C 20烷基或C 6 -C 14芳基 ，M + +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。

公开(公告)号：US07101651B2

公开(公告)日：2006-09-05

申请号：US10776291

申请日：2004-02-12

Applicant: Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Yoshitaka Yanagi ,  Kazunori Maeda

Inventor： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Yoshitaka Yanagi ,  Kazunori Maeda

IPC: G03F7/004 ,  G03F7/30

CPC classification number: C07C381/14 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106

Abstract: A chemical amplification type resist composition comprising a specific sulfonyldiazomethane containing long-chain alkoxyl groups has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

Abstract translation: 包含具有长链烷氧基的特定磺酰基重氮甲烷的化学放大型抗蚀剂组合物具有许多优点，包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或形状退化甚至长期的PED，最小化的碎片在涂布后，显影和剥离 ，并且在显影后改进的图案轮廓，因此适合于微细加工。

公开(公告)号：US20050106500A1

公开(公告)日：2005-05-19

申请号：US10984933

申请日：2004-11-10

Applicant: Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Katsuya Takemura ,  Kazumi Noda ,  Katsuhiro Kobayashi

Inventor： Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Katsuya Takemura ,  Kazumi Noda ,  Katsuhiro Kobayashi

IPC: G03C1/492 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/0382

Abstract: Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.

Abstract translation: 包含具有芳族羧酸酯结构的含氮有机化合物的化学扩增抗蚀剂组合物具有优异的分辨率并提供精确的图案轮廓，并且可用于使用电子束或深紫外光的微细加工。

公开(公告)号：US06713612B2

公开(公告)日：2004-03-30

申请号：US10426623

申请日：2003-05-01

Applicant: Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Koji Hasegawa ,  Takao Yoshihara ,  Kazunori Maeda ,  Toshihiko Fujii

Inventor： Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Koji Hasegawa ,  Takao Yoshihara ,  Kazunori Maeda ,  Toshihiko Fujii

IPC: C07C24514

CPC classification number: G03F7/0382 ,  C07C317/28 ,  G03F7/0045 ,  G03F7/0392

Abstract: Sulfonyldiazomethane compounds containing a long-chain alkylcyclohexyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development.

Abstract translation: 含有长链烷基环己基的磺酰基重氮甲烷化合物是新颖的，可用作光致酸发生剂。 包含该化合物的化学放大型抗蚀剂组合物由于包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或最小化的线宽变化或形状退化，甚至在长时间的PED，最小的残留在涂层，显影和剥离之后的碎片以及改进的许多优点也适用于微细加工。 开发后的图案样式。

公开(公告)号：US06689530B2

公开(公告)日：2004-02-10

申请号：US10255770

申请日：2002-09-27

Applicant: Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Kazunori Maeda

Inventor： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Kazunori Maeda

IPC: G03F7004

CPC classification number: C07C317/28 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/143

Abstract: A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of formula (1) wherein R is H or C1-4 alkyl or alkoxy, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is 1 or 2, q is 0 or 1, p+q=2, n is 0 or 1, m is 3 to 11, and k is 0 to 4. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution and improved pattern profile after development.

Abstract translation: 化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物，其中R为H或C 1-4烷基或烷氧基，G为SO 2或CO，R 3为C 1-10烷基或C 6-14 芳基，p为1或2，q为0或1，p + q = 2，n为0或1，m为3至11，k为0至4.该组合物适用于微细加工，特别是深紫外 由于许多优点，包括改进的分辨率和改进的图案轮廓，开发后的光刻。