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1.发明授权Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process 有权磺酰基重氮甲烷，光酸产生剂，抗蚀剂组合物和图案化工艺公开(公告)号：US07101651B2
公开(公告)日：2006-09-05
申请号：US10776291
申请日：2004-02-12
CPC分类号： C07C381/14 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106
摘要： A chemical amplification type resist composition comprising a specific sulfonyldiazomethane containing long-chain alkoxyl groups has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
摘要翻译： 包含具有长链烷氧基的特定磺酰基重氮甲烷的化学放大型抗蚀剂组合物具有许多优点，包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或形状退化甚至长期的PED，最小化的碎片在涂布后，显影和剥离 ，并且在显影后改进的图案轮廓，因此适合于微细加工。
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2.发明授权Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process 有权磺酰基重氮甲烷，光酸产生剂，抗蚀剂组合物和图案化工艺公开(公告)号：US07109311B2
公开(公告)日：2006-09-19
申请号：US10776159
申请日：2004-02-12
IPC分类号： C07C317/28 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392
摘要： A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
摘要翻译： 包含在苯环上2位具有长链烷氧基的特定苯磺酰基重氮甲烷的化学放大型抗蚀剂组合物具有改进的分辨率，改善的聚焦纬度，即使在长期PED下也能最小化线宽变化或形状退化的优点， 在涂布，显影和剥离后留下的碎片最小化，显影后的图案轮廓改善，因此适用于微细加工。
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3.发明授权Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process 有权磺酰基重氮甲烷，光酸产生剂，抗蚀剂组合物和图案化工艺公开(公告)号：US06713612B2
公开(公告)日：2004-03-30
申请号：US10426623
申请日：2003-05-01
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Koji Hasegawa , Takao Yoshihara , Kazunori Maeda , Toshihiko Fujii
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Koji Hasegawa , Takao Yoshihara , Kazunori Maeda , Toshihiko Fujii
IPC分类号： C07C24514
CPC分类号： G03F7/0382 , C07C317/28 , G03F7/0045 , G03F7/0392
摘要： Sulfonyldiazomethane compounds containing a long-chain alkylcyclohexyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development.
摘要翻译： 含有长链烷基环己基的磺酰基重氮甲烷化合物是新颖的，可用作光致酸发生剂。 包含该化合物的化学放大型抗蚀剂组合物由于包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或最小化的线宽变化或形状退化，甚至在长时间的PED，最小的残留在涂层，显影和剥离之后的碎片以及改进的许多优点也适用于微细加工。 开发后的图案样式。
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4.发明授权Sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process 有权磺酰基重氮甲烷，光酸代，抗蚀剂组合物和图案化工艺公开(公告)号：US06689530B2
公开(公告)日：2004-02-10
申请号：US10255770
申请日：2002-09-27
IPC分类号： G03F7004
CPC分类号： C07C317/28 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/143
摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of formula (1) wherein R is H or C1-4 alkyl or alkoxy, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is 1 or 2, q is 0 or 1, p+q=2, n is 0 or 1, m is 3 to 11, and k is 0 to 4. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution and improved pattern profile after development.
摘要翻译： 化学放大型抗蚀剂组合物含有式（1）的磺酰基二氮甲烷化合物，其中R为H或C 1-4烷基或烷氧基，G为SO 2或CO，R 3为C 1-10烷基或C 6-14 芳基，p为1或2，q为0或1，p + q = 2，n为0或1，m为3至11，k为0至4.该组合物适用于微细加工，特别是深紫外 由于许多优点，包括改进的分辨率和改进的图案轮廓，开发后的光刻。
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5.发明授权Photoacid generators, chemically amplified resist compositions, and patterning process 有权光酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US06916591B2
公开(公告)日：2005-07-12
申请号：US10393006
申请日：2003-03-21
IPC分类号： C07C309/75 , C07D333/36 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0382 , C07C309/75 , C07D333/36 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： Photoacid generators are provided by O-arylsulfonyl-oxime compounds having formula (1) wherein R is H, F, Cl, NO2, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is 0 to 4, r′ is 0 to 5, k is 0 to 4, and G′ and G″ are S or —CH═CH—. Chemically amplified resist compositions comprising the photoacid generators have many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, and improved pattern profile after development. Because of high resolution, the compositions are suited for microfabrication, especially by deep UV lithography.
摘要翻译： 光生酸发生剂由具有式（1）的O-芳基磺酰基 - 肟化合物提供，其中R是H，F，Cl，NO 2，烷基或烷氧基，n是0或1，m是1或2 r为0〜4，r'为0〜5，k为0〜4，G'，G“为S或-CH-CH-。 包含光酸产生剂的化学放大抗蚀剂组合物具有许多优点，包括改进的分辨率，改善的聚焦纬度，最小化的线宽变化或即使在长期PED下的形状退化，以及显影后的改进的图案分布。 由于高分辨率，组合物适用于微细加工，特别是通过深紫外光刻。
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6.发明申请Photoacid generators, chemically amplified resist compositions, and patterning process 有权光酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US20070292768A1
公开(公告)日：2007-12-20
申请号：US11806970
申请日：2007-06-05
申请人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
发明人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
IPC分类号： G03C1/00 , C07D333/36 , G03C5/56
CPC分类号： G03F7/0045 , C07D333/36 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
摘要翻译： 光致酸发生器具有式（1）。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。
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7.发明申请公开(公告)号：US20060188810A1
公开(公告)日：2006-08-24
申请号：US11354204
申请日：2006-02-15
申请人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
发明人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator. The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.
摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。
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8.发明授权Onium salts, photoacid generators, resist compositions, and patterning process 有权鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US06551758B2
公开(公告)日：2003-04-22
申请号：US09983154
申请日：2001-10-23
申请人： Youichi Ohsawa , Jun Watanabe , Kazunori Maeda
发明人： Youichi Ohsawa , Jun Watanabe , Kazunori Maeda
IPC分类号： G03F7004
CPC分类号： C07C381/12 , C07C309/42 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/115 , Y10S430/122
摘要： Onium salts of arylsulfonyloxybenzenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
摘要翻译： 芳基磺酰氧基苯磺酸盐与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，因为许多优点，包括改进的分辨率，改善的焦点纬度，最小化的线宽变化或甚至在长期PED下的形状退化 涂层，显影和剥离后的碎屑，以及显影后改进的图案轮廓。
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9.发明授权Photoacid generators, chemically amplified resist compositions, and patterning process 有权光酸发生剂，化学放大抗蚀剂组合物和图案化工艺公开(公告)号：US07498126B2
公开(公告)日：2009-03-03
申请号：US11806970
申请日：2007-06-05
申请人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
发明人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
CPC分类号： G03F7/0045 , C07D333/36 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
摘要翻译： 光致酸发生器具有式（1）。 包含光致酸发生器的化学放大抗蚀剂组合物具有包括高分辨率，聚焦纬度，长期PED尺寸稳定性和令人满意的图案轮廓形状的优点。 当光酸产生剂与具有不同于缩醛类型的酸不稳定基团的树脂组合时，分辨率和顶部损失得到改善。 该组合物适用于深紫外光刻。
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10.发明授权公开(公告)号：US07335458B2
公开(公告)日：2008-02-26
申请号：US11354204
申请日：2006-02-15
申请人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
发明人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator.The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.
摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。
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