公开(公告)号：US08080364B2

公开(公告)日：2011-12-20

申请号：US12412942

申请日：2009-03-27

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/20 ,  G03F7/38

CPC分类号： G03F7/2043 ,  G03F7/0045 ,  G03F7/2041 ,  Y10S438/948 ,  Y10S438/949

摘要： After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

摘要翻译： 在形成由化学放大型抗蚀剂材料制成的抗蚀剂膜之后，通过在抗蚀剂膜上提供包含三苯基锍非酸盐，即酸产生剂的水并循环的水，选择性地照射抗蚀剂膜来进行曝光， 并临时存储在解决方案存储中。 在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。 因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

公开(公告)号：US07998663B2

公开(公告)日：2011-08-16

申请号：US12212291

申请日：2008-09-17

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/207

CPC分类号： G03F7/2041 ,  G03F7/11 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.

摘要翻译： 在衬底上形成下层膜和中间层膜之后，使用第一抗蚀剂膜通过第一图案曝光形成的抗蚀剂图案和使用第二抗蚀剂膜的第二图案曝光被转印到中间层膜上。 此外，使用中间层图案作为掩模来蚀刻下层膜，从而获得下层膜图案。 底层膜包括氟基表面活性剂或无机纳米颗粒作为加合物，并且具有对氧基等离子体的抵抗性。

公开(公告)号：US07998658B2

公开(公告)日：2011-08-16

申请号：US12767369

申请日：2010-04-26

申请人： Masayuki Endou ,  Masaru Sasago

发明人： Masayuki Endou ,  Masaru Sasago

IPC分类号： G03G5/00 ,  G03F7/00

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/033 ,  H01L21/0337 ,  Y10S427/102 ,  Y10S430/143 ,  Y10S430/146

摘要： A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.

摘要翻译： 在基板上形成第一抗蚀剂膜，并且执行第一图案曝光，使得通过第一掩模用曝光光照射第一抗蚀剂膜。 然后，第一抗蚀剂膜被显影，从而形成第一抗蚀剂图案从第一抗蚀剂膜。 随后，将纳米碳材料附着到第一抗蚀剂图案的表面，然后在包括第一抗蚀剂图案的基板上形成第二抗蚀剂膜。 此后，进行第二图案曝光，使得第二抗蚀剂膜通过第二掩模用曝光光照射。 然后，使第二抗蚀剂膜显影，从而在第二抗蚀剂膜中形成第二抗蚀剂图案。

公开(公告)号：US20110186544A1

公开(公告)日：2011-08-04

申请号：US13085954

申请日：2011-04-13

申请人： Masayuki ENDOU ,  Masaru SASAGO

发明人： Masayuki ENDOU ,  Masaru SASAGO

IPC分类号： B05D3/04 ,  B05D3/02 ,  B05D1/36

CPC分类号： B81C1/00031 ,  B29C71/02 ,  B29C2071/022 ,  B29K2995/0093 ,  G03F7/0002

摘要： A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film.

摘要翻译： 在基材上形成嵌段共聚物膜。 然后，在惰性气体气氛中，例如在氖气氛中对嵌段共聚物膜进行退火。 这使得嵌段共聚物膜的外部（主要是上部）处于非极性状态，从而强烈地拉伸例如在嵌段共聚物膜外具有疏水特性的单体单元以加速自组装。 这导致嵌段共聚物膜的自组装图案形成中的通过量的改善。

公开(公告)号：US07914953B2

公开(公告)日：2011-03-29

申请号：US12204252

申请日：2008-09-04

申请人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

发明人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

IPC分类号： G03F1/00 ,  H01L21/00

CPC分类号： G03F1/26

摘要： A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

摘要翻译： 光掩模包括：具有抵抗曝光的透明性的透明基板; 形成在所述透明基板上并具有第一尺寸的第一遮光图案; 形成在所述透明基板上并且具有比所述第一尺寸大的第二尺寸的第二遮光图案; 以及设置在不形成第一遮光图案和第二遮光图案的透明基板的一部分中的开口。 第一遮光图案包括第一半遮光部分和辅助图案，该第一半遮光部分和辅助图案布置在第一半遮光部分内，并允许曝光光以相对于第一半遮光部分相反的方向通过。 遮光部。 第二遮光图案包括基本上不允许曝光光通过的第二半遮光部分和遮光部分。

公开(公告)号：US07906030B2

公开(公告)日：2011-03-15

申请号：US11659107

申请日：2006-05-23

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC分类号： C25F3/00 ,  C03C25/68 ,  H01L21/461

CPC分类号： C04B41/91 ,  C04B41/009 ,  C04B41/5346 ,  G02B2006/12166 ,  Y10T428/24479 ,  C04B41/0054 ,  C04B35/56

摘要： A WC substrate 7 is etched by using plasma 50 generated from a mixed gas of a gas including a halogen atom and a gas including a nitrogen atom.

摘要翻译： 通过使用由包括卤素原子的气体和包括氮原子的气体的混合气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US07871759B2

公开(公告)日：2011-01-18

申请号：US11949338

申请日：2007-12-03

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： G03F7/2041 ,  C08J5/18 ,  C08J2367/04 ,  G03F7/11 ,  Y10S430/162

摘要： A resist film is formed on a substrate, and a barrier film including a compound whose alkali-insoluble property is changed to an alkali-soluble property through molecular structure change caused by an alkaline solution is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film through the barrier film with exposing light. After the pattern exposure, the barrier film is removed and the resist film is developed. Thus, a resist pattern made of the resist film is formed.

摘要翻译： 在基板上形成抗蚀剂膜，并且在抗蚀剂膜上形成阻挡膜，该阻挡膜包含由碱溶性由碱溶液引起的分子结构变化而变为碱溶性的化合物。 此后，通过设置在阻挡膜上的浸没液体，通过用曝光光选择性地照射阻挡膜来进行图案曝光。 在图案曝光之后，去除阻挡膜并且形成抗蚀剂膜。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US07727707B2

公开(公告)日：2010-06-01

申请号：US11224980

申请日：2005-09-14

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/162

摘要： A resist film is first formed on a substrate. Subsequently, a barrier film including a basic compound of, for example, dicyclohexylamine is formed on the resist film. Thereafter, with an immersion liquid including cesium sulfate provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern in a good shape.

摘要翻译： 首先在基板上形成抗蚀剂膜。 随后，在抗蚀剂膜上形成包含例如二环己胺的碱性化合物的阻挡膜。 此后，通过设置在阻挡膜上的包含硫酸铯的浸渍液，通过选择性地照射抗蚀剂膜，通过阻挡膜曝光光来进行图案曝光。 然后，在除去阻挡膜之后，对经过图案曝光的抗蚀剂膜进行显影，以形成具有良好形状的抗蚀剂图案。

公开(公告)号：US07595142B2

公开(公告)日：2009-09-29

申请号：US11430993

申请日：2006-05-10

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041 ,  Y10S430/162

摘要： In a pattern formation method, a resist film is formed on a substrate, an alkali-soluble first barrier film is formed on the resist film and an alkali-insoluble second barrier film is formed on the first barrier film. Subsequently, with a liquid provided on the second barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the second barrier film and the first barrier film. Then, after removing the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to remove the first barrier film and form a resist pattern made of the resist film.

摘要翻译： 在图案形成方法中，在基板上形成抗蚀剂膜，在抗蚀剂膜上形成碱溶性第一阻挡膜，在第一阻挡膜上形成碱不溶性第二阻挡膜。 随后，利用设置在第二阻挡膜上的液体，通过选择性地照射抗蚀剂膜，通过第二阻挡膜和第一阻挡膜曝光光来进行图案曝光。 然后，在去除第二阻挡膜之后，对已经进行图案曝光的抗蚀剂膜进行显影，以除去第一阻挡膜并形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US07556914B2

公开(公告)日：2009-07-07

申请号：US11253701

申请日：2005-10-20

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： H01L21/0274 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/70958 ,  H01L21/31133

摘要： In a pattern formation method, a resist film is formed on a substrate and a barrier film including a plasticizer is then formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Subsequently, after the pattern exposure, the resist film is developed after removing the barrier film, so as to form a resist pattern in a good shape without producing residues.

摘要翻译： 在图案形成方法中，在基板上形成抗蚀剂膜，然后在抗蚀剂膜上形成包含增塑剂的阻挡膜。 此后，通过设置在阻挡膜上的液体，通过选择性地照射抗蚀剂膜，曝光光通过阻挡膜来进行图案曝光。 随后，在图案曝光之后，在除去阻挡膜之后使抗蚀剂膜显影，从而形成良好形状的抗蚀剂图案而不产生残留物。