公开(公告)号：US07914953B2

公开(公告)日：2011-03-29

申请号：US12204252

申请日：2008-09-04

申请人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

发明人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

IPC分类号： G03F1/00 ,  H01L21/00

CPC分类号： G03F1/26

摘要： A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

摘要翻译： 光掩模包括：具有抵抗曝光的透明性的透明基板; 形成在所述透明基板上并具有第一尺寸的第一遮光图案; 形成在所述透明基板上并且具有比所述第一尺寸大的第二尺寸的第二遮光图案; 以及设置在不形成第一遮光图案和第二遮光图案的透明基板的一部分中的开口。 第一遮光图案包括第一半遮光部分和辅助图案，该第一半遮光部分和辅助图案布置在第一半遮光部分内，并允许曝光光以相对于第一半遮光部分相反的方向通过。 遮光部。 第二遮光图案包括基本上不允许曝光光通过的第二半遮光部分和遮光部分。

公开(公告)号：US20090075182A1

公开(公告)日：2009-03-19

申请号：US12204252

申请日：2008-09-04

申请人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

发明人： Tadami Shimizu ,  Akio Misaka ,  Masaru Sasago

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/26

摘要： A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

摘要翻译： 光掩模包括：具有抵抗曝光的透明性的透明基板; 形成在所述透明基板上并具有第一尺寸的第一遮光图案; 形成在所述透明基板上并且具有比所述第一尺寸大的第二尺寸的第二遮光图案; 以及设置在不形成第一遮光图案和第二遮光图案的透明基板的一部分中的开口。 第一遮光图案包括第一半遮光部分和辅助图案，该第一半遮光部分和辅助图案布置在第一半遮光部分内，并允许曝光光以相对于第一半遮光部分相反的方向通过。 遮光部。 第二遮光图案包括基本上不允许曝光光通过的第二半遮光部分和遮光部分。

公开(公告)号：US06180472B2

公开(公告)日：2001-01-30

申请号：US09361219

申请日：1999-07-27

申请人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

发明人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

IPC分类号： H01L21336

CPC分类号： H01L29/665 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/1045 ,  H01L29/6653 ,  H01L29/66598 ,  H01L29/7833 ,  Y10S257/90

摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.

摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。

公开(公告)号：US06492665B1

公开(公告)日：2002-12-10

申请号：US09714130

申请日：2000-11-17

申请人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

发明人： Susumu Akamatsu ,  Toshitaka Hibi ,  Takehiko Ueda ,  Tadami Shimizu ,  Yoshiaki Kato ,  Tatsuya Obata ,  Toyoyuki Shimazaki

IPC分类号： H01L31072

CPC分类号： H01L29/665 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/1045 ,  H01L29/6653 ,  H01L29/66598 ,  H01L29/7833 ,  Y10S257/90

摘要： After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in. Accordingly, it is possible to provide a method for fabricating a semiconductor device contributing to device miniaturization without causing a shortcircuit between the gate electrode and a contact member.

摘要翻译： 在栅极绝缘膜之后，在Si衬底上依次形成栅电极和栅极保护层，在衬底中形成轻掺杂源极/漏极区。 第一和第二侧壁形成在栅电极的侧面上，然后通过使用这些侧壁作为掩模注入掺杂剂离子形成重掺杂的源/漏区。 在第二侧壁被选择性地去除之后，形成袋注入区域并且沉积整个保护膜。 此后，沉积层间电介质膜，形成接触孔以到达重掺杂的源/漏区，然后形成插塞电极。 由于当整个保护膜沉积时第二侧壁已经被去除，所以相邻栅电极之间的间隙没有被完全填充。因此，可以提供一种用于制造半导体器件的方法，该半导体器件有助于器件小型化而不引起短路 在栅电极和接触构件之间。

公开(公告)号：US20110136048A1

公开(公告)日：2011-06-09

申请号：US13028611

申请日：2011-02-16

申请人： Tadami SHIMIZU ,  Akio MISAKA ,  Masaru SASAGO

发明人： Tadami SHIMIZU ,  Akio MISAKA ,  Masaru SASAGO

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/26

摘要： A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.

摘要翻译： 光掩模包括：具有抵抗曝光的透明性的透明基板; 形成在所述透明基板上并具有第一尺寸的第一遮光图案; 形成在所述透明基板上并且具有比所述第一尺寸大的第二尺寸的第二遮光图案; 以及设置在不形成第一遮光图案和第二遮光图案的透明基板的一部分中的开口。 第一遮光图案包括第一半遮光部分和辅助图案，该第一半遮光部分和辅助图案布置在第一半遮光部分内，并允许曝光光以相对于第一半遮光部分相反的方向通过。 遮光部。 第二遮光图案包括基本上不允许曝光光通过的第二半遮光部分和遮光部分。