公开(公告)号：US20100266958A1

公开(公告)日：2010-10-21

申请号：US12829132

申请日：2010-07-01

申请人： Masayuki ENDOU ,  Masaru Sasago

发明人： Masayuki ENDOU ,  Masaru Sasago

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/11

摘要： Initially, on a substrate, a resist film is formed from a resist material including a monomer containing a halogen atom (fluorine) and stable to acid, a polymer containing fluorine and stable to acid, a polymer containing an acid-labile group, and a photo acid generator. Next, while liquid is provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. Next, the resist film after the pattern exposure is developed to form a resist pattern from the resist film.

摘要翻译： 首先，在基板上，由包含含有卤素原子（氟）并且对酸稳定的单体的抗蚀剂材料，含氟稳定的聚合物，含酸稳定性的抗蚀剂材料形成抗蚀剂膜， 光酸性发生器。 接下来，当在抗蚀剂膜上提供液体时，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 接下来，显影图案曝光后的抗蚀剂膜，从抗蚀膜形成抗蚀剂图案。

公开(公告)号：US20100055626A1

公开(公告)日：2010-03-04

申请号：US12613165

申请日：2009-11-05

申请人： Masayuki Endou ,  Masaru Sasago

发明人： Masayuki Endou ,  Masaru Sasago

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/09 ,  G03F7/203

摘要： A resist film made of a chemically amplified positive resist is formed on a substrate. On the resist film, a light absorbing film containing a fluoropolymer which is alkali-soluble and has an aromatic ring is formed. Thereafter, first pattern exposure is performed by irradiating the resist film through the light absorbing film with first exposure light containing extreme ultraviolet light having passed through a first mask. Thereafter, second pattern exposure is performed by irradiating the resist film through the light absorbing film with exposure light having passed through a second mask. After the substrate is heated, the resist film is developed to remove the light absorbing film and form a resist pattern made of the resist film. An opening portion of the second mask is formed in a region corresponding to a non-opening portion of the first mask in which an opening portion is not formed.

摘要翻译： 在基板上形成由化学放大型正性抗蚀剂制成的抗蚀剂膜。 在抗蚀剂膜上形成含有碱溶性且具有芳环的含氟聚合物的吸光膜。 此后，通过使含有通过第一掩模的极紫外光的第一曝光光通过光吸收膜照射抗蚀剂膜，进行第一图案曝光。 此后，通过经过第二掩模的曝光光通过光吸收膜照射抗蚀剂膜来进行第二图案曝光。 在加热基板之后，将抗蚀剂膜显影以除去光吸收膜并形成由抗蚀剂膜制成的抗蚀剂图案。 第二掩模的开口部形成在与不形成开口部的第一掩模的非开口部对应的区域中。

公开(公告)号：US20120009795A1

公开(公告)日：2012-01-12

申请号：US13237657

申请日：2011-09-20

申请人： Masayuki ENDOU ,  Masaru Sasago

发明人： Masayuki ENDOU ,  Masaru Sasago

IPC分类号： H01L21/311 ,  C08F120/30 ,  C08F116/14 ,  G03F7/20

CPC分类号： C08F8/00 ,  C08F220/28 ,  G03F7/0392

摘要： A resist film (102) made of a chemically amplified resist material including a polymer containing an acid leaving group and a group in which a lactone is replaced with hydrogen in an OH group of phenol is formed on a substrate (101). The resist film (102) is then selectively irradiated with exposure light, thereby performing pattern exposure. After the pattern exposure, the resist film (102) is heated, and then developed, thereby forming a resist pattern (102a) out of the resist film (102).

摘要翻译： 在基板（101）上形成抗蚀剂膜（102），其由化学放大抗蚀剂材料制成，该抗蚀剂材料包含含有酸离去基团的聚合物和其中内酯被苯酚OH基团中的氢取代的基团。 然后用曝光光选择性地照射抗蚀剂膜（102），从而进行图案曝光。 在图案曝光之后，将抗蚀剂膜（102）加热，然后显影，从而在抗蚀剂膜（102）中形成抗蚀剂图案（102a）。

公开(公告)号：US20110177454A1

公开(公告)日：2011-07-21

申请号：US13079423

申请日：2011-04-04

申请人： Masayuki Endou ,  Masaru Sasago

发明人： Masayuki Endou ,  Masaru Sasago

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/0045

摘要： First, a resist film is formed on a substrate from a resist material including cyclic oligomer which does not contain any acid-labile group, is soluble in alkali, and is a trimer or a higher multimer; a molecular compound containing an acid-labile group; a photoacid generator; and no polymer. Then, pattern exposure is performed by selectively irradiating the formed resist film with exposure light of extreme ultraviolet. The resist film after the pattern exposure is heated, and then, the heated resist film is developed to form a resist pattern from the resist film.

摘要翻译： 首先，从包含不含酸不稳定基团的环状低聚物的抗蚀剂材料在基板上形成抗蚀剂膜，可溶于碱，并且为三聚体或更高级的多聚体; 含有酸不稳定基团的分子化合物; 光致酸发生器; 没有聚合物。 然后，通过用极紫外线的曝光光选择性地照射形成的抗蚀剂膜来进行图案曝光。 对图案曝光后的抗蚀剂膜进行加热，然后将加热的抗蚀剂膜显影，从抗蚀剂膜形成抗蚀剂图案。

公开(公告)号：US20100209850A1

公开(公告)日：2010-08-19

申请号：US12767369

申请日：2010-04-26

申请人： Masayuki ENDOU ,  Masaru Sasago

发明人： Masayuki ENDOU ,  Masaru Sasago

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/033 ,  H01L21/0337 ,  Y10S427/102 ,  Y10S430/143 ,  Y10S430/146

摘要： A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.

摘要翻译： 在基板上形成第一抗蚀剂膜，并且执行第一图案曝光，使得通过第一掩模用曝光光照射第一抗蚀剂膜。 然后，第一抗蚀剂膜被显影，从而形成第一抗蚀剂图案从第一抗蚀剂膜。 随后，将纳米碳材料附着到第一抗蚀剂图案的表面，然后在包括第一抗蚀剂图案的基板上形成第二抗蚀剂膜。 此后，进行第二图案曝光，使得第二抗蚀剂膜通过第二掩模用曝光光照射。 然后，使第二抗蚀剂膜显影，从而在第二抗蚀剂膜中形成第二抗蚀剂图案。

公开(公告)号：US5254439A

公开(公告)日：1993-10-19

申请号：US854696

申请日：1992-03-20

申请人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

发明人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

IPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/075 ,  G03F7/30

CPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/0757 ,  Y10S430/146

摘要： There is disclosed a polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds that are greater than trisilane bonds, sensitive to far ultraviolet rays. The polymer is prepared by polymerizing a dichlorosiloxane alone or with at least one dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet, and is suitable for preparing a single layered resist or an upper resist of a two-layered system.

摘要翻译： 公开了具有对远紫外线敏感的线性-Si-O-Si键和-Si-Si-Si键或大于丙硅烷键的聚硅烷键的聚合物。 聚合物是通过在惰性溶剂中在钠的存在下单独或与至少一种二氯硅烷聚合二氯硅烷来制备的。 聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下显示吸收峰，并且适用于制备双层系统的单层抗蚀剂或上抗蚀剂。

公开(公告)号：US5126419A

公开(公告)日：1992-06-30

申请号：US622152

申请日：1990-12-03

申请人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

发明人： Yoshiyuki Tani ,  Masayuki Endou ,  Kazufumi Ogawa ,  Yasuhisa Tanaka ,  Toshinobu Ishihara ,  Tohru Kubota

IPC分类号： C08G77/48 ,  C08G77/60 ,  G03F7/075

CPC分类号： G03F7/0754 ,  C08G77/48 ,  C08G77/60 ,  G03F7/0757

摘要： A polymer having linear --Si--O--Si-- bonds and --Si--Si--Si-- bonds, or polysilane bonds more than trisilane bonds, sensitive to far ultraviolet rays. The light-sensitive polymer can be prepared by copolymerizing a dichlorodisiloxane and a dichlorosilane in an inert solvent in the presence of sodium. The polymer undergoes oxidation with oxygen plasma to form SiO.sub.2 resistant to oxygen dry etching, exhibits absorption peaks only in far ultraviolet and is suitable for preparing a single layered resist or an upper resist of a two layered resist system.

摘要翻译： 具有线性-Si-O-Si-键和-Si-Si-Si-键的聚合物，或聚硅烷键多于丙硅烷键，对远紫外线敏感。 感光性聚合物可以通过在惰性溶剂中在钠的存在下使二氯二硅氧烷和二氯硅烷共聚来制备。 聚合物用氧等离子体进行氧化以形成耐氧干蚀刻的SiO 2，仅在远紫外线下表现出吸收峰，并且适用于制备双层抗蚀剂体系的单层抗蚀剂或上抗蚀剂。

公开(公告)号：US07998658B2

公开(公告)日：2011-08-16

申请号：US12767369

申请日：2010-04-26

申请人： Masayuki Endou ,  Masaru Sasago

发明人： Masayuki Endou ,  Masaru Sasago

IPC分类号： G03G5/00 ,  G03F7/00

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/033 ,  H01L21/0337 ,  Y10S427/102 ,  Y10S430/143 ,  Y10S430/146

摘要： A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.

摘要翻译： 在基板上形成第一抗蚀剂膜，并且执行第一图案曝光，使得通过第一掩模用曝光光照射第一抗蚀剂膜。 然后，第一抗蚀剂膜被显影，从而形成第一抗蚀剂图案从第一抗蚀剂膜。 随后，将纳米碳材料附着到第一抗蚀剂图案的表面，然后在包括第一抗蚀剂图案的基板上形成第二抗蚀剂膜。 此后，进行第二图案曝光，使得第二抗蚀剂膜通过第二掩模用曝光光照射。 然后，使第二抗蚀剂膜显影，从而在第二抗蚀剂膜中形成第二抗蚀剂图案。

公开(公告)号：US20110186544A1

公开(公告)日：2011-08-04

申请号：US13085954

申请日：2011-04-13

申请人： Masayuki ENDOU ,  Masaru SASAGO

发明人： Masayuki ENDOU ,  Masaru SASAGO

IPC分类号： B05D3/04 ,  B05D3/02 ,  B05D1/36

CPC分类号： B81C1/00031 ,  B29C71/02 ,  B29C2071/022 ,  B29K2995/0093 ,  G03F7/0002

摘要： A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film.

摘要翻译： 在基材上形成嵌段共聚物膜。 然后，在惰性气体气氛中，例如在氖气氛中对嵌段共聚物膜进行退火。 这使得嵌段共聚物膜的外部（主要是上部）处于非极性状态，从而强烈地拉伸例如在嵌段共聚物膜外具有疏水特性的单体单元以加速自组装。 这导致嵌段共聚物膜的自组装图案形成中的通过量的改善。

公开(公告)号：US08067148B2

公开(公告)日：2011-11-29

申请号：US12780597

申请日：2010-05-14

申请人： Masayuki Endou ,  Masaru Sasago

发明人： Masayuki Endou ,  Masaru Sasago

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  G03F7/0392 ,  G03F7/2041

摘要： A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size.

摘要翻译： 在基板上形成含有光致酸发生剂的正型抗蚀剂膜。 然后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 此后，对经受图案曝光的抗蚀剂膜进行第一次加热。 加热后，对抗蚀剂膜进行第一次显影，从而形成第一抗蚀剂图案。 随后，将第一抗蚀剂图案暴露于含有热酸发生剂的溶液中，既不含聚合物也不含交联剂。 曝光后，对第一抗蚀剂图案进行第二次加热。 然后在第一抗蚀剂图案上进行第二显影，从而形成由具有减小尺寸的第一抗蚀剂图案制成的第二抗蚀剂图案。