Linear grating formation method
    51.
    发明申请
    Linear grating formation method 失效
    线性光栅形成方法

    公开(公告)号:US20050196709A1

    公开(公告)日:2005-09-08

    申请号:US11066495

    申请日:2005-02-28

    CPC classification number: G02B5/1857 G03F7/0005 G03F7/0035

    Abstract: A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

    Abstract translation: 公开了一种形成线性光栅的方法。 当形成覆盖基板的某些表面区域的第一抗蚀剂图案时,掩模图案位置移动,并且形成第一抗蚀剂图案,使得即使当定位错误发生时,目标区域中的沟槽也完全被第一抗蚀剂图案填充 。 蚀刻第一抗蚀剂图案的表面,并且将下抗蚀剂图案保留到与硅衬底的最上层步骤相同的水平。 此外,形成具有与第一抗蚀剂图案相同的图案的上抗蚀剂图案。 此时,掩模图案位置移动,并且调整曝光剂量使得上抗蚀剂图案的一个边缘位于下抗蚀剂图案上,另一边缘位于规定区域边界部分中。 下抗蚀剂图案和上抗蚀剂图案用作掩模以蚀刻硅衬底。

    InP-based HEMT with superlattice carrier supply layer
    52.
    发明授权
    InP-based HEMT with superlattice carrier supply layer 失效
    基于InP的HEMT与超晶格载体供应层

    公开(公告)号:US6100542A

    公开(公告)日:2000-08-08

    申请号:US974731

    申请日:1997-11-19

    CPC classification number: H01L29/155 H01L29/7783

    Abstract: A semiconductor device includes a semi-insulating substrate. A channel layer is formed on the semi-insulating substrate. An electron supply layer is formed on the semi-insulating substrate for generating a two-dimensional electron gas. The electron supply layer includes a doped superlattice layer. The superlattice layer includes layers of In.sub.X Al.sub.1-X As and layers of In.sub.Y Al.sub.1-Y As which alternate with each other, where 0.ltoreq.X.ltoreq.1.0 and 0.ltoreq.Y.ltoreq.1.0, and X differs from Y.

    Abstract translation: 半导体器件包括半绝缘衬底。 在半绝缘基板上形成沟道层。 在半绝缘基板上形成电子供给层,生成二维电子气。 电子供应层包括掺杂的超晶格层。 超晶格层包括InXAl1-XAs层和InYAl1-YAs层,它们彼此交替,其中0≤X≤1.0且0≤Y≤1.0,并且X与Y不同。

    Method of manufacturing a shutter for a disc cartridge
    54.
    发明授权
    Method of manufacturing a shutter for a disc cartridge 失效
    制造用于盘盒的快门的方法

    公开(公告)号:US5454251A

    公开(公告)日:1995-10-03

    申请号:US186577

    申请日:1994-01-26

    CPC classification number: G11B23/0308 Y10S72/702

    Abstract: A manufacturing method of a shutter for a cartridge which is accommodating therein a recording medium includes the steps of punching out a plate-shaped metal material so as to provide a shutter of a developed shape having a pair of plate-shaped portions and a coupling portion for coupling the pair of plate-shaped portions, shaping the punched-out member in such a fashion that the pair of plate-shaped portions are opposed to each other across the coupling portion and that a spacing between free end sides of the pair of plate-shaped portions become narrower than a spacing of the pair of plate-shaped portions at its portion coupled by the coupling portion, and shaping the shaped member such that a spacing between free ends of the pair of plate-shaped portions of the member shaped by the second process become substantially equal to a spacing of the pair of plate-shaped portions at its portion coupled by the coupling member.

    Abstract translation: 其中容纳有记录介质的盒的快门的制造方法包括以下步骤:冲压出板状金属材料,以便提供具有一对板状部分的开发形状的活门和耦合部分 为了联接所述一对板状部分,以使所述一对板状部分跨越所述联接部分彼此相对的方式成形所述冲压部件,并且所述一对板的自由端侧之间的间隔 形状部分变得比通过联接部分耦合的一对板状部分的间隔窄,并且成形构件使得成形的一对板状部分的自由端之间的间隔由 第二过程变得基本上等于一对板状部分在其由联接构件联接的部分处的间隔。

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