NON-VOLATILE RESISTANCE CHANGE DEVICE
    51.
    发明申请
    NON-VOLATILE RESISTANCE CHANGE DEVICE 审中-公开
    非易失性电阻变化器件

    公开(公告)号:US20130234087A1

    公开(公告)日:2013-09-12

    申请号:US13605917

    申请日:2012-09-06

    IPC分类号: H01L45/00

    摘要: A non-volatile resistance change device includes a first electrode made of a metallic element, a second electrode, a variable resistance layer formed between the first electrode and the second electrode, first wiring formed on the first electrode on a side opposite to the variable resistance layer, and second wiring formed on the second electrode on a side opposite to the variable resistance layer. If the width of the first wiring is represented as A (nm), the width of the second wiring represented as B (nm), and the distance between the first electrode and the second electrode represented as L0 (nm), the following equation is satisfied: 3 2  AB

    摘要翻译: 非易失性电阻变化装置包括由金属元件构成的第一电极,第二电极,形成在第一电极和第二电极之间的可变电阻层,在与可变电阻相反的一侧形成在第一电极上的第一布线 层和在与可变电阻层相反的一侧形成在第二电极上的第二布线。 如果将第一布线的宽度表示为A(nm),则表示为B(nm)的第二布线的宽度以及表示为L0(nm)的第一电极和第二电极之间的距离,下式为 满意:3 2 AB

    VARIABLE RESISTANCE MEMORY
    52.
    发明申请
    VARIABLE RESISTANCE MEMORY 有权
    可变电阻记忆

    公开(公告)号:US20130037776A1

    公开(公告)日:2013-02-14

    申请号:US13425687

    申请日:2012-03-21

    IPC分类号: H01L45/00

    摘要: A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to the second wiring, the second electrode facing to the first electrode; a variable resistance layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed at side portions of the second electrode. The one of the first insulating layer and the first semiconductor layer, and the second electrode form voids at the side portions of the second electrode.

    摘要翻译: 根据实施例的可变电阻存储器包括:第一布线; 与第一布线相交的第二布线; 设置在所述第一布线和所述第二布线之间的交叉区域中的第一电极,所述第一电极连接到所述第一布线; 连接到第二布线的第二电极,第二电极面对第一电极; 设置在所述第一电极和所述第二电极之间的可变电阻层; 以及形成在第二电极的侧部的第一绝缘层和第一半导体层中的一个。 第一绝缘层和第一半导体层中的一个,第二电极形状在第二电极的侧部空隙。

    SEMICONDUCTOR DEVICE
    53.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号:US20100051906A1

    公开(公告)日:2010-03-04

    申请号:US12549140

    申请日:2009-08-27

    IPC分类号: H01L31/0352

    摘要: A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

    摘要翻译: 提供了用于校正输入信号并输出​​校正信号的半导体器件。 半导体器件包括半导体层,形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体,第二导​​体的数量大于第一导体的密度高于 在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧,形成在另一面上的绝缘层, 多个第三导体,形成在绝缘层上并用作用于输出处理信号的输出端。

    Systems for improved blower fans
    54.
    发明授权
    Systems for improved blower fans 失效
    改进鼓风机系统

    公开(公告)号:US07443670B2

    公开(公告)日:2008-10-28

    申请号:US11030930

    申请日:2005-01-07

    IPC分类号: H05K7/20

    摘要: According to some embodiments, systems for improved blower fans are provided. In some embodiments, systems may include a casing comprising an inlet to accept a fluid and an outlet to evacuate the fluid. The systems may further comprise an impeller disposed within the casing, comprising a hub and one or more impeller blades coupled to the hub. In some embodiments, the inlet of the casing may be shaped to reduce the amount of fluid that evacuates the casing via the inlet due to pressure within the casing.

    摘要翻译: 根据一些实施例,提供了用于改进的鼓风机的系统。 在一些实施例中,系统可以包括壳体,其包括用于接收流体的入口和用于排出流体的出口。 所述系统还可以包括设置在壳体内的叶轮,包括轮毂和联接到轮毂的一个或多个叶轮叶片。 在一些实施例中,壳体的入口可以成形为减小由于壳体内的压力而通过入口排出壳体的流体的量。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME
    55.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 失效
    半导体器件及其制造方法

    公开(公告)号:US20080230804A1

    公开(公告)日:2008-09-25

    申请号:US12036703

    申请日:2008-02-25

    摘要: A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal.

    摘要翻译: 公开了一种半导体器件,其具有即使电子或空穴为多数载流子的具有降低的电接触电阻的电极。 该器件在半导体衬底的顶表面中具有n型扩散层和p型扩散层。 该装置还具有图案化的第一和第二金属线分别覆盖在n型和p型扩散层之间,介于其间的介电层,用于在n型扩散层和第一金属之间电连接的第一接触电极 电线和用于在p型扩散层和第二金属线之间连接的第二接触电极。 与n型扩散层接触的第一接触电极部分和与p型扩散层接触的第二接触电极部分分别由包含金属的第一导体和含有稀土金属的第二导体形成。

    Method, apparatus and computer system for air mover configuration
    56.
    发明申请
    Method, apparatus and computer system for air mover configuration 审中-公开
    风机配置方法,装置和计算机系统

    公开(公告)号:US20080049394A1

    公开(公告)日:2008-02-28

    申请号:US11509110

    申请日:2006-08-23

    申请人: Yoshifumi Nishi

    发明人: Yoshifumi Nishi

    IPC分类号: G05D23/00 H05K7/20

    CPC分类号: G05D23/19 G06F1/20

    摘要: Some embodiments of a method, apparatus and computer system are described for configuring one or more air movers. A computer system may include a housing and an air mover coupled to an electronic device and positioned in relative proximity to an electronic component. In some embodiments, the air mover has an intake region, and is configured such that the intake region may include a first bisection larger than a second bisection. In some embodiments, a configuration module may be coupled to the air mover, such that the configuration module may alter the configuration of the air mover such that the intake region is altered. Other embodiments are described.

    摘要翻译: 描述了一种方法,装置和计算机系统的一些实施例,用于配置一个或多个鼓风机。 计算机系统可以包括壳体和联接到电子设备并且相对靠近电子部件定位的空气推动器。 在一些实施例中,空气移动器具有进气区域,并且被构造成使得进气区域可以包括大于第二平分度的第一二分线。 在一些实施例中,配置模块可以联接到空气推动器,使得配置模块可以改变空气推动器的构造,使得进气区域被改变。 描述其他实施例。

    Fin type memory cell
    57.
    发明申请
    Fin type memory cell 审中-公开
    鳍式存储单元

    公开(公告)号:US20070247906A1

    公开(公告)日:2007-10-25

    申请号:US11723335

    申请日:2007-03-19

    IPC分类号: G11C16/04

    摘要: A Fin-type memory cell according to an example of the present invention includes a fin-shaped active area, a floating gate along a side surface of the fin-shaped active area, and two control gate electrodes arranged in a longitudinal direction of the fin-shaped active area, and sandwiching the floating gate.

    摘要翻译: 根据本发明的实施例的鳍型存储单元包括鳍状有源区域,沿着鳍状有源区域的侧表面的浮置栅极和沿翅片的纵向布置的两个控制栅极电极 形状的活动区域,并夹着浮动门。