公开(公告)号：US07241700B1

公开(公告)日：2007-07-10

申请号：US10969769

申请日：2004-10-20

申请人： William George En ,  Eric N. Paton ,  Scott D. Luning

发明人： William George En ,  Eric N. Paton ,  Scott D. Luning

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0206 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30608 ,  H01L21/823864 ,  H01L29/66636

摘要： A gate structure is formed overlying a substrate. A source/drain region of the substrate is exposed to a soluction comprising ammonium hydroxide, hydrogen peroxide, and deionized water to etch an upper-most semiconductor porton of the source/drain region.

摘要翻译： 栅极结构形成在衬底上。 衬底的源极/漏极区域暴露于包含氢氧化铵，过氧化氢和去离子水的溶液中，以蚀刻源极/漏极区域的最上半个半导体端口。

公开(公告)号：US06605513B2

公开(公告)日：2003-08-12

申请号：US09729699

申请日：2000-12-06

申请人： Eric N. Paton ,  Ercan Adem ,  Jacques J. Bertrand ,  Paul R. Besser ,  Matthew S. Buynoski ,  John Clayton Foster ,  Paul L. King ,  George Jonathan Kluth ,  Minh Van Ngo ,  Christy Mei-Chu Woo

发明人： Eric N. Paton ,  Ercan Adem ,  Jacques J. Bertrand ,  Paul R. Besser ,  Matthew S. Buynoski ,  John Clayton Foster ,  Paul L. King ,  George Jonathan Kluth ,  Minh Van Ngo ,  Christy Mei-Chu Woo

IPC分类号： H01L21336

CPC分类号： H01L29/665 ,  H01L21/28061 ,  H01L21/28518 ,  H01L29/4933

摘要： A self-aligned silicide process that can accommodate a low thermal budget and form silicide regions of small dimensions in a controlled reaction. In a first temperature treatment, nickel metal or nickel alloy is reacted with a silicon material to form at least one high resistance nickel silicide region. Unreacted nickel is removed. A dielectric layer is then deposited over a high resistance nickel silicide regions. In a second temperature treatment, the at least one high resistance nickel silicide region and dielectric layer are reacted at a prescribed temperature to form at least one low resistance silicide region and process the dielectric layer. Bridging between regions is avoided by the two-step process as silicide growth is controlled, and unreacted nickel between silicide regions is removed after the first temperature treatment. The processing of the high resistance nickel silicide regions and the dielectric layer are conveniently combined into a single temperature treatment.

摘要翻译： 自对准硅化物工艺，可以适应低热预算，并在受控反应中形成小尺寸的硅化物区域。 在第一温度处理中，镍金属或镍合金与硅材料反应以形成至少一个高电阻镍硅化物区域。 去除未反应的镍。 然后将电介质层沉积在高电阻镍硅化物区域上。 在第二温度处理中，至少一个高电阻镍硅化物区域和电介质层在规定温度下反应以形成至少一个低电阻硅化物区域并处理介电层。 通过控制硅化物生长的两步法避免区域之间的桥接，并且在第一温度处理之后去除硅化物区域之间的未反应的镍。 将高电阻镍硅化物区域和电介质层的处理方便地组合成单温度处理。

公开(公告)号：US06300203B1

公开(公告)日：2001-10-09

申请号：US09679872

申请日：2000-10-05

申请人： Matthew S. Buynoski ,  Paul R. Besser ,  Qi Xang ,  Paul L. King ,  Eric N. Paton

发明人： Matthew S. Buynoski ,  Paul R. Besser ,  Qi Xang ,  Paul L. King ,  Eric N. Paton

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/66583

摘要： High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are formed by electrolytically plating a metal or metal-based dielectric precursor layer comprising at least one refractory or lanthanum series transition metal, on a semiconductor substrate, typically a silicon-based substrate, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one refractory or lanthanum series transition metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.

摘要翻译： 通过电解电镀形成高质量的电介质层，例如由至少一种难熔或镧系列过渡金属氧化物或硅酸盐构成的高k电介质层，用作在叠层金属栅极MOS晶体管和CMOS器件中作为栅极绝缘体层 在半导体衬底（通常为硅基衬底）上包含至少一种难熔或镧系过渡金属的金属或金属基电介质前体层，然后使前体层与氧或氧和半导体衬底反应，形成 至少一种耐火材料或镧系列过渡金属氧化物或硅酸盐。 本发明的方法在至少形成栅极绝缘体层的初始阶段期间防止或至少基本上减少氧接触到衬底表面，从而最小化半导体衬底/栅极处的氧诱导表面状态的有害形成 绝缘子接口。

公开(公告)号：US6048790A

公开(公告)日：2000-04-11

申请号：US113436

申请日：1998-07-10

申请人： John A. Iacoponi ,  Eric N. Paton

发明人： John A. Iacoponi ,  Eric N. Paton

IPC分类号： C23C18/06 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C18/06 ,  H01L21/76877 ,  H01L21/76807

摘要： A method for depositing conductive material inside openings within an integrated circuit uses chemical solution deposition. The method includes applying the integrated circuit having the openings with a metalorganic decomposition precursor. The metalorganic decomposition precursor on the integrated circuit is pyrolyzed in a reducing ambient to form a layer of conductive material. For example, if the reducing ambient includes one of hydrogen gas, or a hydrogen and nitrogen gas mix, reactive hydrogen, or ultra high vacuum substantially devoid of oxygen, a conductive layer of metal forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient. If the reducing ambient includes reactive nitrogen, a conductive layer of metal nitride forms from pyrolyzing the metalorganic decomposition precursor in such a reducing ambient. The present invention which uses metalorganic decomposition precursors which are chemical solutions with high wetability may be used to particular advantage for depositing a barrier layer and copper within small geometry openings for metal interconnects.

摘要翻译： 用于在集成电路内的开口内沉积导电材料的方法使用化学溶液沉积。 该方法包括将具有开口的集成电路与金属有机分解前体一起应用。 集成电路上的金属有机分解前体在还原环境中热解，形成一层导电材料。 例如，如果还原环境包括基本上不含氧的氢气或氢气和氮气混合物，反应性氢气或超高真空中的一种，则在这种还原环境中热分解金属有机物分解前体形成的金属导电层 。 如果还原环境包括反应性氮，则在这种还原环境中，从金属有机物分解前体的热解形成金属氮化物的导电层。 使用作为具有高润湿性的化学溶液的金属有机分解前体的本发明可用于在用于金属互连的小几何形状开口内沉积阻挡层和铜的特别有利。

公开(公告)号：US20090032888A1

公开(公告)日：2009-02-05

申请号：US12251959

申请日：2008-10-15

申请人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

发明人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

IPC分类号： H01L29/78

CPC分类号： H01L29/7834 ,  H01L21/28035 ,  H01L21/28123 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628

摘要： A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

摘要翻译： 侧壁间隔结构邻近门结构形成，由此形成侧壁间隔结构的外表面的材料含有氮。 在其形成之后，侧壁间隔结构被退火以使后壁清洁过程的侧壁间隔结构硬化。 在清洁处理之后形成外延层。

公开(公告)号：US06297159B1

公开(公告)日：2001-10-02

申请号：US09350975

申请日：1999-07-07

申请人： Eric N. Paton

发明人： Eric N. Paton

IPC分类号： H01L21302

CPC分类号： H01F1/447 ,  B24B1/005 ,  B24B37/04 ,  H01L21/3212

摘要： A process for, and apparatus for, Chemically-Mechanically Polishing (CMP) a semiconductor wafer with a slurry including ElectroRheological (ER) and/or MagnetoRheological (MR) fluids. The combination of the materials and an electric field provides inherent tuning of polishing rates, locally and globally, and improves flatness and uniformity, as well as minimizing recession and erosion.

摘要翻译： 用包括电流变（ER）和/或磁流变（MR）流体的浆料在内的化学机械抛光（CMP）半导体晶片的方法和装置。 材料和电场的组合提供了本地和全球抛光速率的固有调谐，并且改善了平整度和均匀性，并且使衰退和侵蚀最小化。

公开(公告)号：US07456062B1

公开(公告)日：2008-11-25

申请号：US11209871

申请日：2005-08-23

申请人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

发明人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/7834 ,  H01L21/28035 ,  H01L21/28123 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628

摘要： A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

公开(公告)号：US07402207B1

公开(公告)日：2008-07-22

申请号：US10839378

申请日：2004-05-05

申请人： Paul R. Besser ,  Eric N. Paton ,  William G. En

发明人： Paul R. Besser ,  Eric N. Paton ,  William G. En

IPC分类号： C30B21/04

CPC分类号： C30B25/16 ,  G01B11/0616 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capability to measure the thickness of an SEG film in-situ utilizing optical ellipsometry equipment during or after SEG layer growth, prior to removing the wafer from the SEG growth tool. Optical ellipsometry equipment can be integrated into the SEG platform and control software, thus providing automated process control (APC) capability for SEG thickness. The integration of the ellipsometry equipment may be varied, dependent upon the needs of the fabrication facility, e.g., integration to provide ellipsometer monitoring of a single process tool, or multiple tool monitoring, among other configurations.

摘要翻译： 提出了在半导体制造工艺中允许厚度控制选择性外延生长（SEG）层的方法和系统，例如CMOS技术中的升高的源/漏应用。 这些方法和系统提供了在从SEG生长工具移除晶片之前在SEG层生长期间或之后使用光学椭偏仪设备原位测量SEG膜的厚度的能力。 光学椭圆测量设备可以集成到SEG平台和控制软件中，从而为SEG厚度提供自动化过程控制（APC）能力。 椭圆测量设备的集成可以根据制造设施的需要而变化，例如集成以提供单个处理工具的椭偏仪监控，或者多个工具监视以及其他配置。

公开(公告)号：US06966235B1

公开(公告)日：2005-11-22

申请号：US09680286

申请日：2000-10-06

申请人： Eric N. Paton

发明人： Eric N. Paton

IPC分类号： G01D11/24 ,  H01L21/00 ,  H01L21/66

CPC分类号： G01D11/245 ,  H01L21/67253 ,  Y10T29/49771 ,  Y10T29/53022

摘要： Monitoring of parameters using remote sensors, which are attached directly to the product material, allows for non-intrusive entry into the manufacturing area, via the same robotic handling or automated systems used to transport the standard product material. Data is recorded from the sensors, by wireless transmission, or when a signal is impassible, on-board memory will store the data for later downloading.

摘要翻译： 使用直接连接到产品材料的远程传感器对参数的监控允许通过用于运输标准产品材料的相同的机器人处理或自动化系统非侵入性地进入制造区域。 数据通过无线传输从传感器记录下来，或当信号无法通信时，机载存储器将存储数据供以后下载。