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51.发明申请公开(公告)号：US20180204494A1
公开(公告)日：2018-07-19
申请号：US15541639
申请日：2016-09-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guangliang Shang , Xing Yao , Seungwoo Han , Yujie Gao , Yuanbo Zhang , Ming Chen , Jungmok Jun , Xue Dong
CPC classification number: G09G3/20 , G09G3/3266 , G09G3/3677 , G09G2300/0408 , G09G2310/0267 , G09G2310/0286 , G11C19/28 , G11C19/287
Abstract: Disclosed is a shift register unit, a gate driving circuit and a driving method, as well as a display apparatus. The shift register unit has a working cycle including an input phase, an output phase, a reset phase and a maintaining phase. In the reset phase, a clock signal is transmitted to an output terminal to pull a voltage of the output terminal down to a reference voltage, and the pulled-down voltage of the output terminal is subsequently changed from the reference voltage to a gate-off voltage. In the maintaining phase, the voltage of the output terminal is maintained at the gate-off voltage. The reference voltage is smaller than the gate-off voltage.
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公开(公告)号：US09793300B2
公开(公告)日：2017-10-17
申请号：US14900960
申请日：2015-06-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang , Xing Yao , Yoonsung Um , Seungwoo Han , Yunsik Im
IPC: H01L27/14 , H01L27/12 , H01L29/786 , H01L27/02 , H01L29/417 , H01L29/423
CPC classification number: H01L27/124 , H01L27/0207 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/786 , H01L29/78606
Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.
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公开(公告)号：US09620241B2
公开(公告)日：2017-04-11
申请号：US14416029
申请日：2014-05-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Seungwoo Han , Xing Yao
IPC: G09G3/32 , G11C19/28 , G09G3/3225 , G09G3/3266
CPC classification number: G11C19/28 , G09G3/3225 , G09G3/3266 , G09G2300/0842 , G09G2310/0286
Abstract: According to an embodiment of the present disclosure, a shift register unit may include: a first control module, configured to transmit a start signal to a first node; a second control module, configured to pull a potential of a second node to a potential different from a potential of the first node, under a control of a first clock signal; a carry output module, configured to output a carry signal according to the potential of the first node and the potential of the second node; and a shift output module, configured to output a shift signal according to the potential of the first node and the potential of the second node.
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公开(公告)号：US20160372487A1
公开(公告)日：2016-12-22
申请号：US14900960
申请日：2015-06-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolin Wang , Xing Yao , Yoonsung Um , Seungwoo Han , Yunsik Im
IPC: H01L27/12 , H01L27/02 , H01L29/423 , H01L29/786 , H01L29/417
CPC classification number: H01L27/124 , H01L27/0207 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/786 , H01L29/78606
Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.
Abstract translation: 本公开提供了TFT和电路结构，以改善TFT的阈值电压漂移的特性。 TFT包括栅电极，半导体层，蚀刻停止层，以及连接到半导体层的源电极和漏电极。 TFT还包括布置在蚀刻停止层上方的停止结构。 停止结构与源电极和漏电极电隔离，并且止动结构在蚀刻停止层上的正交投影至少部分地与半导体层的正交投影重叠在蚀刻停止层上。 本公开改善了TFT的阈值电压漂移的特性。
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55.发明申请SHIFT REGISTER UNIT, GATE DRIVING CIRCUIT, DRIVING METHOD AND DISPLAY APPARATUS 有权移动寄存器单元，门驱动电路，驱动方法和显示设备公开(公告)号：US20150348596A1
公开(公告)日：2015-12-03
申请号：US14517001
申请日：2014-10-17
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xing Yao , Han-Seung- Woo , Yuanbo Zhang
CPC classification number: G11C19/184 , G09G3/20 , G09G3/3674 , G09G3/3677 , G09G2310/0267 , G09G2310/0286 , G11C5/06 , G11C19/188 , G11C19/28
Abstract: Embodiments of the present disclosure provide a shift register unit, a gate driving circuit, a driving method and a display apparatus, which can simplify the design of connection lines among the shift register units and thereby is beneficial to achieve a narrow frame of the product. The shift register unit comprises an input module connected to an input terminal, a first control signal terminal and a first node; an output module connected to a first node, a second node, a second control signal terminal, an output terminal and a second level terminal; and an output control module connected to the first node, the second node, the output terminal, a first level terminal and the second level terminal. The embodiments of the present disclosure are used to manufacture displays.
Abstract translation: 本公开的实施例提供一种可以简化移位寄存器单元之间的连接线的设计的移位寄存器单元，栅极驱动电路，驱动方法和显示装置，从而有利于实现产品的窄帧。 移位寄存器单元包括连接到输入端子，第一控制信号端子和第一节点的输入模块; 连接到第一节点，第二节点，第二控制信号终端，输出终端和第二电平终端的输出模块; 以及连接到第一节点，第二节点，输出终端，第一级终端和第二级终端的输出控制模块。 本公开的实施例用于制造显示器。
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Patent Agency Ranking
公开(公告)号：US12223900B2
公开(公告)日：2025-02-11
申请号：US18272811
申请日：2022-07-29
Inventor： Zhidong Yuan , Yongqian Li , Can Yuan , Liu Wu , Xiuting Liu , Luke Ding , Cheng Xu , Miao Liu , Xing Yao
IPC: G09G3/3233 , G11C19/28 , H10K59/131
Abstract: A display substrate and a display apparatus. The display substrate includes a display area provided with pixel circuits arranged in an array and a non-display area provided with M light emitting driving circuits, M control driving circuits and M reset driving circuits. Odd-numbered light emitting driving circuits are electrically connected with first and second light emitting clock signal lines, and even-numbered light emitting driving circuits are connected with third and fourth light emitting clock signal lines; and/or, odd-numbered control driving circuits are electrically connected with first and second control clock signal lines, and even-numbered control driving circuits are connected with third and fourth control clock signal lines; and/or, odd-numbered reset driving circuits are electrically connected with first and second reset clock signal lines, and even-numbered reset driving circuits are connected with third and fourth reset clock signal lines.
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公开(公告)号：US12211452B2
公开(公告)日：2025-01-28
申请号：US18572742
申请日：2023-05-31
Inventor： Miao Liu , Xueguang Hao , Libin Liu , Teng Chen , Xinyin Wu , Yong Qiao , Xing Yao , Jingquan Wang
IPC: G09G3/3266 , G09G3/20 , G09G3/3233 , G11C19/28 , H10K59/121 , H10K59/126
Abstract: The display substrate includes a shift register arranged on a base substrate, and the shift register includes a plurality of stages of driving circuits; a plurality of stages of the driving circuit are provided in the driving circuit area of the base substrate; a stage of driving circuit area includes a first area and a second area, and the first area is provided with a first type of transistor included in the driving circuit, a second type of transistor included in the driving circuit is provided in the second area; one side of the first area is a side of the power line away from the second area, and the other side of the first area is a side close to the second area of an active layer of the first type of transistor close to the second area.
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公开(公告)号：US12190811B2
公开(公告)日：2025-01-07
申请号：US18268361
申请日：2021-11-26
Inventor： Gansong Yang , Yunpeng Zhang , Ming Yang , Yanhong Ding , Ke Liu , Miao Liu , Xing Yao
IPC: G09G3/3233 , G09G3/3266
Abstract: A display substrate is provided to include: a base substrate including a display area and a peripheral area surrounding the display area; pixel units in array are in the display area; a driving module is in the peripheral area and is configured to provide electrical signals for the pixel units, to control the pixel units to operate; the driving module includes driving circuits each provided with a corresponding operating signal line group in the peripheral area; the signal line group includes at least two operating signal lines connected to the corresponding driving circuit, to provide electrical signals thereto; the at least two operating signal lines include first and second clock signal lines; the first clock signal lines for at least two driving circuits are a same first clock signal line; and/or the second clock signal lines for the at least two driving circuits are a same second clock signal line.
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公开(公告)号：US11978404B2
公开(公告)日：2024-05-07
申请号：US18302056
申请日：2023-04-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xing Yao , Chen Xu , Jingquan Wang , Xinyin Wu
IPC: G09G3/3266 , H10K59/126 , H10K59/131
CPC classification number: G09G3/3266 , H10K59/126 , H10K59/131 , G09G2300/0426 , G09G2310/0286
Abstract: A display substrate is provided. The display substrate includes a base substrate including a display region and a peripheral region, and a first scan driving circuit, a second scan driving circuit and a first power line arranged in sequence, and a first shielding layer and a second shielding layer sequentially arranged on a side of the second scan driving circuit away from the base substrate; the first shielding layer covers at least one transistor in the second scan driving circuit, and the second shielding layer covers at least one transistor of transistors in the second scan driving circuit except the at least one transistor covered by the first shielding layer; and the second shielding layer is also on a side of the first scan driving circuit away from the base substrate, and the second shielding layer covers at least one transistor in the first scan driving circuit.
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公开(公告)号：US11699382B2
公开(公告)日：2023-07-11
申请号：US17780626
申请日：2021-07-21
Inventor： Xuehuan Feng , Xing Yao , Jingbo Xu , Xuelian Cheng
IPC: G09G3/3266 , G09G3/20
CPC classification number: G09G3/2074 , G09G3/3266 , G09G2300/0443 , G09G2310/061 , G09G2310/08 , G09G2320/0257
Abstract: Provided is a method for driving a display device including n rows of sub-pixels; the method includes: driving the first frame of image, including: performing normal display driving on the n rows of sub-pixels in a display driving period, performing darkness insertion driving on a rows, from the 1st to ath rows, of sub-pixels in a first darkness insertion sub-period, and performing darkness insertion driving on (n−a) rows, from the (a+1)th to nth rows, of sub-pixels in a second darkness insertion sub-period driving a second frame of image, including: performing normal display driving on the n rows of sub-pixels in a display driving period, performing darkness insertion driving on b rows, from the 1st to bth rows, of sub-pixels in a first darkness insertion sub-period, and performing darkness insertion driving on (n−b) rows, from the (b+1)th to nth rows, of sub-pixels in a second darkness insertion sub-period.
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