Scintillator panel, radiation detector, and methods for manufacturing the same
    52.
    发明授权
    Scintillator panel, radiation detector, and methods for manufacturing the same 有权
    闪烁面板,辐射探测器及其制造方法

    公开(公告)号:US09530530B2

    公开(公告)日:2016-12-27

    申请号:US15000472

    申请日:2016-01-19

    CPC classification number: G21K4/00 G01T1/2018 G01T1/202 G21K2004/06

    Abstract: A method is provided for manufacturing a scintillator panel including a substrate and a scintillator layer containing a plurality of crystals formed by depositing a scintillator material on a deposition surface of the substrate. The method includes depositing the scintillator material on the deposition surface of the substrate such that the scintillator material incidents on the deposition surface obliquely with respect to the normal to the deposition surface, and varying the angle between a reference direction on the deposition surface and a projected incident direction that is obtained by projecting the direction of the scintillator material incident onto the deposition surface. In the vapor deposition, the amount of the scintillator material deposited on the deposition surface changes according to the angle between the projected incident direction and the reference direction.

    Abstract translation: 提供了一种制造闪烁体面板的方法,该闪烁体面板包括衬底和闪烁体层,该闪烁体层含有通过在衬底的沉积表面上沉积闪烁体材料形成的多个晶体。 该方法包括将闪烁体材料沉积在衬底的沉积表面上,使得闪烁体材料相对于沉积表面的法线倾斜地沉积在沉积表面上,并且改变沉积表面上的参考方向与投影 通过投射入射到沉积表面上的闪烁体材料的方向而获得的入射方向。 在气相沉积中,沉积在沉积表面上的闪烁体材料的量根据投影入射方向和基准方向之间的角度而变化。

    SCINTILLATOR PANEL, RADIATION DETECTOR, AND METHODS FOR MANUFACTURING THE SAME
    53.
    发明申请
    SCINTILLATOR PANEL, RADIATION DETECTOR, AND METHODS FOR MANUFACTURING THE SAME 有权
    扫描仪面板,辐射探测器及其制造方法

    公开(公告)号:US20160217879A1

    公开(公告)日:2016-07-28

    申请号:US15000472

    申请日:2016-01-19

    CPC classification number: G21K4/00 G01T1/2018 G01T1/202 G21K2004/06

    Abstract: A method is provided for manufacturing a scintillator panel including a substrate and a scintillator layer containing a plurality of crystals formed by depositing a scintillator material on a deposition surface of the substrate. The method includes depositing the scintillator material on the deposition surface of the substrate such that the scintillator material incidents on the deposition surface obliquely with respect to the normal to the deposition surface, and varying the angle between a reference direction on the deposition surface and a projected incident direction that is obtained by projecting the direction of the scintillator material incident onto the deposition surface. In the vapor deposition, the amount of the scintillator material deposited on the deposition surface changes according to the angle between the projected incident direction and the reference direction.

    Abstract translation: 提供了一种制造闪烁体面板的方法,该闪烁体面板包括衬底和闪烁体层,该闪烁体层含有通过在衬底的沉积表面上沉积闪烁体材料形成的多个晶体。 该方法包括将闪烁体材料沉积在衬底的沉积表面上,使得闪烁体材料相对于沉积表面的法线倾斜地沉积在沉积表面上,并且改变沉积表面上的参考方向与投影 通过投射入射到沉积表面上的闪烁体材料的方向而获得的入射方向。 在气相沉积中,沉积在沉积表面上的闪烁体材料的量根据投影入射方向和基准方向之间的角度而变化。

    Scintillator crystal and radiation detector
    54.
    发明授权
    Scintillator crystal and radiation detector 有权
    闪烁晶体和辐射探测器

    公开(公告)号:US09182505B2

    公开(公告)日:2015-11-10

    申请号:US14497129

    申请日:2014-09-25

    CPC classification number: G01T1/20 G01T1/202

    Abstract: A scintillator crystal includes a plurality of first crystal phases and a second crystal phase located around the plurality of the first crystal phases, in which each of the plurality of the first crystal phases contains a sulfate, the second crystal phase contains an alkali halide that emits light by irradiation with radiation, and the refractive index of each of the first crystal phases is lower than the refractive index of the second crystal phase.

    Abstract translation: 闪烁体晶体包括多个第一晶相和位于多个第一晶相周围的第二晶相,其中多个第一晶相中的每一个含有硫酸根,第二晶相含有发射的碱金属卤化物 并且每个第一结晶相的折射率低于第二结晶相的折射率。

    Compound, scintillator, and radiation detector
    55.
    发明授权
    Compound, scintillator, and radiation detector 有权
    化合物,闪烁体和辐射探测器

    公开(公告)号:US08803099B2

    公开(公告)日:2014-08-12

    申请号:US13909454

    申请日:2013-06-04

    Abstract: There is provided a compound represented by the general formula Cs3Cu2[I1-xClx]5, wherein x is 0.71 or more and 0.79 or less. Also, there is provided a method for producing a compound, comprising mixing cesium iodide, cesium chloride, and copper chloride together in such a manner that the molar ratio of cesium to copper to iodine to chlorine is 3:2:5(1-x):5x (wherein 0.71≦x≦0.79), melting the resulting mixture, and solidifying the resulting molten material to give a compound.

    Abstract translation: 提供由通式Cs 3 Cu 2 [I 1-x Cl x] 5表示的化合物,其中x为0.71以上且0.79以下。 此外,提供了一种制备化合物的方法,其包括将碘化铯,氯化铯和氯化铜一起以使得铯与铜与碘与氯的摩尔比为3:2:5(1-x ):5x(其中0.71≦̸ x≦̸ 0.79),使所得混合物熔化,并使所得熔融材料固化,得到化合物。

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