公开(公告)号：US20110223279A1

公开(公告)日：2011-09-15

申请号：US13113534

申请日：2011-05-23

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/02

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07968253B2

公开(公告)日：2011-06-28

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07957175B2

公开(公告)日：2011-06-07

申请号：US11980353

申请日：2007-10-31

申请人： Chee-kheng Lim ,  Eun-hyoung Cho ,  Sung-hoon Choa

发明人： Chee-kheng Lim ,  Eun-hyoung Cho ,  Sung-hoon Choa

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.

公开(公告)号：US07952906B2

公开(公告)日：2011-05-31

申请号：US11980455

申请日：2007-10-31

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： An information storage device includes a writing magnetic layer including a magnetic domain wall. An information storing magnetic layer is connected to the writing magnetic layer, and includes at least one magnetic domain wall. The information storage device also includes a reader for reading data recorded in the information storing magnetic layer. The connection layer includes a first portion with a first width adjacent to the writing magnetic layer and a second portion with a second width adjacent to the at least one information storing magnetic layer. The first width is less than the second width.

摘要翻译： 信息存储装置包括具有磁畴壁的书写磁性层。 存储磁性层的信息连接到书写磁性层，并且包括至少一个磁畴壁。 信息存储装置还包括用于读取记录在信息存储磁性层中的数据的读取器。 连接层包括具有与书写磁性层相邻的第一宽度的第一部分和与存储磁性层的至少一个信息相邻的第二宽度的第二部分。 第一宽度小于第二宽度。

公开(公告)号：US07751224B2

公开(公告)日：2010-07-06

申请号：US11750376

申请日：2007-05-18

申请人： Chee-kheng Lim ,  Eun-sik Kim

发明人： Chee-kheng Lim ,  Eun-sik Kim

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3222 ,  Y10S977/933

摘要： A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.

摘要翻译： 一种采用磁畴壁运动的存储器件的数据记录和读取方法。 存储器件包括写入磁道，形成在写入磁道上的互连层，以及形成在互连层上的记录磁道。

公开(公告)号：US07502248B2

公开(公告)日：2009-03-10

申请号：US11117352

申请日：2005-04-29

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01F10/3263 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： A multi-bit magnetic random access memory device and a method for writing to and sensing the multi-bit magnetic random access memory device. The magnetic memory includes a memory cell with a multilayer structure having a plurality of data layers which can each store one bit. The structure includes a plurality of magnetically changeable ferromagnetic layers, a ferromagnetic reference layer having a fixed magnetization state, a first spacer layer separating the magnetically changeable ferromagnetic layers, and a second spacer layer separating the ferromagnetic reference layer from the magnetically changeable ferromagnetic layers. This structure allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.

摘要翻译： 一种多位磁随机存取存储器件以及用于写入和感测多位磁性随机存取存储器件的方法。 磁存储器包括具有多个数据层的多层结构的存储单元，每个数据层可以存储一位。 该结构包括多个可磁化铁磁层，具有固定磁化状态的铁磁参考层，分离可磁化铁磁层的第一间隔层和将铁磁参考层与磁性可变铁磁层隔开的第二间隔层。 这种结构允许存储多于一位，以及有效的写入和降低的功耗。

公开(公告)号：US20080299416A1

公开(公告)日：2008-12-04

申请号：US12018270

申请日：2008-01-23

申请人： Seong-yong YOON ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

发明人： Seong-yong YOON ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

IPC分类号： G11B5/62 ,  G11B5/66 ,  G11B5/84 ,  G11B5/65

CPC分类号： G11B5/667 ,  G11B5/64 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/84

摘要： A perpendicular magnetic recording medium and a method of manufacturing the same are provided. The perpendicular magnetic recording medium comprises a recording layer including a plurality of regions formed in the depth direction of the recording layer and a magnetic anisotropy constant of a region relatively deeper than another region, among the plurality of regions, is greater than that of the another region. The method of manufacturing a perpendicular magnetic recording medium includes: forming a recording layer having perpendicular magnetic anisotropy; and irradiating the recording layer with ions.

摘要翻译： 提供了一种垂直磁记录介质及其制造方法。 垂直磁记录介质包括记录层，该记录层包括在记录层的深度方向上形成的多个区域和多个区域中比另一区域相对更深的区域的磁各向异性常数大于另一区域的磁各向异性常数 地区。 制造垂直磁记录介质的方法包括：形成具有垂直磁各向异性的记录层; 并用离子照射记录层。

公开(公告)号：US20080160349A1

公开(公告)日：2008-07-03

申请号：US12000243

申请日：2007-12-11

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11B5/66 ,  B44C1/22 ,  G11B5/33

CPC分类号： G11C19/0808 ,  G11C11/14

摘要： Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.

摘要翻译： 示例性实施例可以使用包括具有至少两个具有可确定的磁化方向的磁畴的第一磁性层和/或形成在第一磁性层的下表面上的软的第二磁性层的磁畴壁的移动来提供数据存储装置。 即使在第一磁性层的弯曲区域中，也可以移动磁畴壁。

公开(公告)号：US20080137406A1

公开(公告)日：2008-06-12

申请号：US11987925

申请日：2007-12-06

申请人： Chee-kheng Lim ,  Sung-hoon Choa

发明人： Chee-kheng Lim ,  Sung-hoon Choa

IPC分类号： G11C11/15 ,  H01L21/00

CPC分类号： G11C19/0808 ,  Y10S977/933

摘要： Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.

摘要翻译： 示例性实施例可以提供具有沟槽的磁畴信息存储设备和制造信息存储设备的方法。 示例性实施例信息存储设备可以包括在具有多个磁畴的基板上的磁性层和用于移动磁畴壁的功率单元。 磁性层可以平行于衬底，并且磁性层中的多个沟槽可以垂直于衬底。 对应于沟槽的磁性层的下表面的部分可以向下突出。

公开(公告)号：US20060087881A1

公开(公告)日：2006-04-27

申请号：US11117453

申请日：2005-04-29

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/5607

摘要： An advanced multi-bit magnetic random access memory device and a method for writing to the advanced multi-bit magnetic random access memory device. The magnetic memory includes one or more pair-cells. A pair-cell is two memory cells. Each memory cell has a magnetic multilayer structure. The structure includes a magnetically changeable ferromagnetic layer, a ferromagnetic reference layer having a non-changeable magnetization state, and a corresponding spacer layer separating the ferromagnetic layers. The memory cells are arranged such that an effective remnant magnetization of each of the cells is non-parallel from the cells' long-axis. This allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.