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    METHOD FOR FABRICATING A METAL GATE STRUCTURE
    51.
    发明申请
    METHOD FOR FABRICATING A METAL GATE STRUCTURE 审中-公开
    制作金属结构结构的方法

    公开(公告)号：US20110012205A1

    公开(公告)日：2011-01-20

    申请号：US12889410

    申请日：2010-09-24

    Applicant: Chien-Ting Lin ,  Che-Hua Hsu ,  Li-Wei Cheng

    Inventor： Chien-Ting Lin ,  Che-Hua Hsu ,  Li-Wei Cheng

    IPC: H01L29/49

    CPC classification number: H01L21/28123 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

    Abstract: A metal gate structure is disclosed. The metal gate structure includes: a semiconductor substrate having an active region and an isolation region; an isolation structure disposed in the isolation region; a first gate structure disposed on the active region; and a second gate structure disposed on the isolation structure, wherein the height of the second gate structure is different from the height of the first gate structure.

    Abstract translation: 公开了一种金属栅极结构。 金属栅极结构包括：具有有源区和隔离区的半导体衬底; 设置在所述隔离区域中的隔离结构; 设置在所述有源区上的第一栅极结构; 以及设置在所述隔离结构上的第二栅极结构，其中所述第二栅极结构的高度不同于所述第一栅极结构的高度。

    Semiconductor device and method of fabricating the same
    53.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07816243B2

    公开(公告)日：2010-10-19

    申请号：US12372908

    申请日：2009-02-18

    Applicant: Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    Inventor： Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    IPC: H01L21/4763

    CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

    Abstract: A semiconductor device and a method of fabricating the same are described. A substrate having a PMOS area and an NMOS area is provided. A high-k layer is formed on the substrate. A first cap layer is formed on the high-k layer in the PMOS area, and a second cap layer is formed on the high-k layer in the NMOS area, wherein the first cap layer is different from the second cap layer. A metal layer and a polysilicon layer are sequentially formed on the first and second cap layers. The polysilicon layer, the metal layer, the first cap layer, the second cap layer and the high-k layer are patterned to form first and second gate structures respectively in the PMOS and NMOS areas. First source/drain regions are formed in the substrate beside the first gate structure. Second source/drain regions are formed in the substrate beside the second gate structure.

    Abstract translation: 对半导体器件及其制造方法进行说明。 提供具有PMOS区域和NMOS区域的衬底。 在基板上形成高k层。 在PMOS区域的高k层上形成第一覆盖层，在NMOS区域的高k层上形成第二覆盖层，其中第一覆盖层与第二覆盖层不同。 在第一和第二盖层上依次形成金属层和多晶硅层。 图案化多晶硅层，金属层，第一覆盖层，第二覆盖层和高k层，以在PMOS和NMOS区域中分别形成第一和第二栅极结构。 在第一栅极结构旁边的基板中形成第一源极/漏极区域。 第二源极/漏极区域形成在第二栅极结构旁边的衬底中。

    Ultrasonically welded electrical plug including illuminated indicator
    56.
    发明授权
    Ultrasonically welded electrical plug including illuminated indicator 失效
    超声焊接电插头包括照明指示灯

    公开(公告)号：US5863364A

    公开(公告)日：1999-01-26

    申请号：US935129

    申请日：1997-09-22

    Applicant: Chien-Ting Lin ,  Chao-Chuan Chien

    Inventor： Chien-Ting Lin ,  Chao-Chuan Chien

    IPC: B29C65/08 ,  H01R13/504 ,  H01R13/633 ,  B32B31/16

    CPC classification number: B29C65/08 ,  B29C66/12443 ,  B29C66/12461 ,  B29C66/54 ,  H01R13/504 ,  B29C66/73921 ,  B29L2031/3061 ,  H01R13/6335 ,  H01R2103/00 ,  H01R24/66

    Abstract: A method of ultrasonic welding of plastic members to form a high strength interconnection between the members in the form of a low profile, illuminated electrical plug. High-frequency (ultrasonic) energy is transmitted by the ultrasonic welding apparatus to compatible plastic parts of the low profile electrical plug. At the intersection of the two parts, a combination of applied force and surface and/or intermolecular friction increases the temperature until the melting point of the thermoplastic is reached. Upon removal of the ultrasonic energy, a bond is produced between the plastic parts, effectively affixing them together in the desired fashion.

    Abstract translation: 一种塑料构件的超声波焊接方法，以形成薄型照明电插头形式的构件之间的高强度互连。 高频（超声波）能量通过超声波焊接装置传递到薄型电插头的兼容塑料部件。 在两部分的交点处，施加的力和表面和/或分子间摩擦的组合增加了温度，直到达到热塑性塑料的熔点。 在去除超声能量之后，在塑料部件之间产生粘合，以期望的方式将它们有效地粘贴在一起。

    One-piece tape cutting device
    57.
    发明授权
    One-piece tape cutting device 有权

    公开(公告)号：US12024388B2

    公开(公告)日：2024-07-02

    申请号：US17882664

    申请日：2022-08-08

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: B65H35/00

    CPC classification number: B65H35/0033 ,  B65H35/008

    Abstract: A one-piece tape cutting device is provided, comprising: a tape shaft, a tape pressing part, a cutting part, a tape supporting part, a side plate, and a pressing plate, and all are integrally formed without being connected by any fasteners. the tape is sleeved on the outside of the tape shaft from the opposite side of the side plate, the pressing plate is stretched by the tape and away from the tape shaft, so that the tape is pressed by the pressing plate and does not rotate, the tape is restricted by the anti-dislodging piece and does not disengage, and the end of the tape is pulled through the gap between the tape supporting part and the tape pressing part, and non-adhesive surface of the tape faces the tape pressing part, and the cutting part can cut through the tape.

    Upper unit of tripod
    58.
    外观设计
    Upper unit of tripod 有权

    公开(公告)号：USD1018642S1

    公开(公告)日：2024-03-19

    申请号：US29810219

    申请日：2021-10-02

    Applicant: Chien-Ting Lin

    Designer： Chien-Ting Lin

    Abstract: FIG. 1 is a perspective view of an upper unit of tripod showing my new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof;
    FIG. 4 is a left elevational view thereof;
    FIG. 5 is a right elevational view thereof;
    FIG. 6 is a top view thereof;
    FIG. 7 is a bottom view thereof; and,
    FIG. 8 is a perspective view of the upper unit of tripod viewed from another direction.
    The broken lines in the drawings illustrate portions of the upper unit of tripod that form no part of the claimed design.

    Slide type mobile phone holder
    59.
    发明授权
    Slide type mobile phone holder 有权

    公开(公告)号：US11424782B2

    公开(公告)日：2022-08-23

    申请号：US17220243

    申请日：2021-04-01

    Applicant: Chien-Ting Lin

    Inventor： Chien-Ting Lin

    IPC: F16M11/04 ,  H04B1/3877 ,  H04M1/04

    Abstract: A slide type mobile phone holder includes: a first coupling portion having a first clamp portion and provided with first coupling and outer accommodation portions at first coupling and outer surfaces thereof, respectively, a first coupling wall and a first sliding groove provided between the first coupling and outer accommodation portions, the first coupling accommodation portion having a first coupling protrusion and a first hook; a second coupling portion having a second clamp portion and provided with second coupling and outer accommodation portions at second coupling and outer surfaces thereof, respectively, a second coupling wall and a second sliding groove provided between the second coupling and outer accommodation portions, the second coupling accommodation portion having a second coupling protrusion and a second hook; and a spring member abutting against the first and second coupling protrusions. The first and second coupling portions are assembled together for clamping a mobile phone.

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