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    Semiconductor device and method of fabricating the same
    1.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07816243B2

    公开(公告)日：2010-10-19

    申请号：US12372908

    申请日：2009-02-18

    申请人： Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    发明人： Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

    摘要： A semiconductor device and a method of fabricating the same are described. A substrate having a PMOS area and an NMOS area is provided. A high-k layer is formed on the substrate. A first cap layer is formed on the high-k layer in the PMOS area, and a second cap layer is formed on the high-k layer in the NMOS area, wherein the first cap layer is different from the second cap layer. A metal layer and a polysilicon layer are sequentially formed on the first and second cap layers. The polysilicon layer, the metal layer, the first cap layer, the second cap layer and the high-k layer are patterned to form first and second gate structures respectively in the PMOS and NMOS areas. First source/drain regions are formed in the substrate beside the first gate structure. Second source/drain regions are formed in the substrate beside the second gate structure.

    摘要翻译： 对半导体器件及其制造方法进行说明。 提供具有PMOS区域和NMOS区域的衬底。 在基板上形成高k层。 在PMOS区域的高k层上形成第一覆盖层，在NMOS区域的高k层上形成第二覆盖层，其中第一覆盖层与第二覆盖层不同。 在第一和第二盖层上依次形成金属层和多晶硅层。 图案化多晶硅层，金属层，第一覆盖层，第二覆盖层和高k层，以在PMOS和NMOS区域中分别形成第一和第二栅极结构。 在第一栅极结构旁边的基板中形成第一源极/漏极区域。 第二源极/漏极区域形成在第二栅极结构旁边的衬底中。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100207214A1

    公开(公告)日：2010-08-19

    申请号：US12372908

    申请日：2009-02-18

    申请人： Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    发明人： Chun-Fei Chuang ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Shao-Hua Hsu ,  Cheng-I Lin

    IPC分类号： H01L29/80 ,  H01L21/8238

    CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

    摘要： A semiconductor device and a method of fabricating the same are described. A substrate having a PMOS area and an NMOS area is provided. A high-k layer is formed on the substrate. A first cap layer is formed on the high-k layer in the PMOS area, and a second cap layer is formed on the high-k layer in the NMOS area, wherein the first cap layer is different from the second cap layer. A metal layer and a polysilicon layer are sequentially formed on the first and second cap layers. The polysilicon layer, the metal layer, the first cap layer, the second cap layer and the high-k layer are patterned to form first and second gate structures respectively in the PMOS and NMOS areas. First source/drain regions are formed in the substrate beside the first gate structure. Second source/drain regions are formed in the substrate beside the second gate structure.

    摘要翻译： 对半导体器件及其制造方法进行说明。 提供具有PMOS区域和NMOS区域的衬底。 在基板上形成高k层。 在PMOS区域的高k层上形成第一覆盖层，在NMOS区域的高k层上形成第二覆盖层，其中第一覆盖层与第二覆盖层不同。 在第一和第二盖层上依次形成金属层和多晶硅层。 图案化多晶硅层，金属层，第一覆盖层，第二覆盖层和高k层，以在PMOS和NMOS区域中分别形成第一和第二栅极结构。 在第一栅极结构旁边的基板中形成第一源极/漏极区域。 第二源极/漏极区域形成在第二栅极结构旁边的衬底中。

    Method of selectively removing patterned hard mask
    8.
    发明授权
    Method of selectively removing patterned hard mask 有权
    选择性去除图案化硬掩模的方法

    公开(公告)号：US08486842B2

    公开(公告)日：2013-07-16

    申请号：US12901453

    申请日：2010-10-08

    申请人： Che-Hua Hsu ,  Shao-Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen

    发明人： Che-Hua Hsu ,  Shao-Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L27/0629 ,  H01L28/24

    摘要： A method of selectively removing a patterned hard mask is described. A substrate with a patterned target layer thereon is provided, wherein the patterned target layer includes a first target pattern and at least one second target pattern, and the patterned hard mask includes a first mask pattern on the first target pattern and a second mask pattern on the at least one second target pattern. A first photoresist layer is formed covering the first mask pattern. The sidewall of the at least one second target pattern is covered by a second photoresist layer. The second mask pattern is removed using the first photoresist layer and the second photoresist layer as a mask.

    摘要翻译： 描述了选择性地去除图案化的硬掩模的方法。 提供了其上具有图案化目标层的衬底，其中所述图案化目标层包括第一目标图案和至少一个第二目标图案，并且所述图案化硬掩模包括第一目标图案上的第一掩模图案和第二掩模图案 所述至少一个第二目标图案。 形成覆盖第一掩模图案的第一光致抗蚀剂层。 所述至少一个第二目标图案的侧壁被第二光致抗蚀剂层覆盖。 使用第一光致抗蚀剂层和第二光致抗蚀剂层作为掩模去除第二掩模图案。

    Method of forming metal gate structure
    9.
    发明授权
    Method of forming metal gate structure 有权
    形成金属栅极结构的方法

    公开(公告)号：US08492259B2

    公开(公告)日：2013-07-23

    申请号：US13586874

    申请日：2012-08-16

    申请人： Che-Hua Hsu ,  Shao-Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen

    发明人： Che-Hua Hsu ,  Shao-Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen

    IPC分类号： H01L21/336 ,  H01L21/308 ,  H01L21/475

    CPC分类号： H01L21/823807 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

    摘要： A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

    摘要翻译： 一种形成金属栅极结构的方法包括提供衬底; 形成层叠在基板上的栅介质层，材料层和多晶硅层; 在所述多晶硅层上形成第一掩模层，第二掩模层和图案化光致抗蚀剂; 通过利用图案化的光致抗蚀剂作为蚀刻掩模去除第二掩模层和第一掩模层的部分以形成硬掩模; 去除图案化的光致抗蚀剂，接着利用硬掩模作为蚀刻掩模去除部分多晶硅层和材料层的部分。 因此，形成栅堆叠。 由于在形成栅极叠层之前去除图案化的光致抗蚀剂，所以保护栅极堆叠免受光致抗蚀剂去除工艺的损害。 光致抗蚀剂去除工艺不会侵蚀栅极堆叠的侧壁，因此防止栅极电介质层的鸟喙效应。