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55 条记录 (耗时 0.038 秒)

    Array display including resilient material in the seam
    51.
    发明授权
    Array display including resilient material in the seam 有权
    阵列显示，包括接缝中的弹性材料

    公开(公告)号：US06822389B2

    公开(公告)日：2004-11-23

    申请号：US09975367

    申请日：2001-10-11

    申请人： Robert F. Kwasnick ,  Stephen P. Sedaker

    发明人： Robert F. Kwasnick ,  Stephen P. Sedaker

    IPC分类号： H01J162

    CPC分类号： G09F9/33 ,  H01L27/3293

    摘要： An array display may be formed of panels that include a resilient material positioned around their edges. The resilient material may be black to promote a seamless appearance. Because the material is resilient, it may facilitate the interconnection of panels to form the array, preventing damage during assembly or thereafter.

    摘要翻译： 阵列显示器可以由包括围绕其边缘定位的弹性材料的面板形成。 弹性材料可以是黑色的以促进无缝的外观。 因为材料是弹性的，所以它可以促进面板的互连以形成阵列，防止组装过程中或之后的损坏。

    Light emitting device addressed spatial light modulator
    52.
    发明授权
    Light emitting device addressed spatial light modulator 有权
    发光器件寻址空间光调制器

    公开(公告)号：US06806987B2

    公开(公告)日：2004-10-19

    申请号：US10636897

    申请日：2003-08-06

    申请人： Robert F. Kwasnick ,  Kenneth E. Salsman

    发明人： Robert F. Kwasnick ,  Kenneth E. Salsman

    IPC分类号： G02F103

    CPC分类号： G02F1/135

    摘要： An optically addressed spatial light modulator may be formed with an integrated light emitting device display. The light emitting device display may be formed of a size and cost that optimizes the overall modulator design. In addition, by integrating the modulator and display devices, the overall size of the spatial light modulator may be reduced in some embodiments.

    摘要翻译： 光学寻址的空间光调制器可以用集成的发光器件显示器形成。 发光器件显示器可以由优化整个调制器设计的尺寸和成本形成。 此外，通过集成调制器和显示装置，在一些实施例中可以减小空间光调制器的总体尺寸。

    Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface
    54.
    发明授权
    Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface 失效
    利用栅极电介质/半导体层界面的氢等离子体处理制造薄膜晶体管的方法

    公开(公告)号：US5273920A

    公开(公告)日：1993-12-28

    申请号：US939746

    申请日：1992-09-02

    申请人： Robert F. Kwasnick ,  George E. Possin

    发明人： Robert F. Kwasnick ,  George E. Possin

    IPC分类号： H01L21/30 ,  H01L29/786 ,  H01L21/265

    CPC分类号： H01L29/4908 ,  H01L21/3003 ,  H01L29/66765 ,  H01L29/78669 ,  Y10S438/91

    摘要： A method of fabricating a thin film transistor (TFT) includes the steps of forming a gate conductor on a substrate; depositing a gate dielectric layer of silicon nitride over the gate conductor; treating the exposed silicon nitride on the surface of the gate dielectric layer with a hydrogen plasma at a power level of at least 44 mW/cm.sup.2 for at least 5 minutes; depositing a layer of amorphous silicon semiconductor material over the gate dielectric layer; depositing a layer of n+ doped silicon over the treated amorphous silicon surface; depositing a layer of source/drain metallization over the n+ doped layer; and patterning the source/drain metallization and portions of the underlying n+ doped layer to form source and drain electrodes. The deposition of the TFT material layers and the hydrogen plasma treatment is preferably by plasma enhanced chemical vapor deposition.

    摘要翻译： 制造薄膜晶体管（TFT）的方法包括在基板上形成栅极导体的步骤; 在栅极导体上沉积氮化硅栅极电介质层; 用至少44mW / cm 2的功率水平的氢等离子体处理所述栅极电介质层的表面上暴露的氮化硅至少5分钟; 在所述栅极电介质层上沉积非晶硅半导体材料层; 在所处理的非晶硅表面上沉积n +掺杂硅层; 在n +掺杂层上沉积一层源极/漏极金属化层; 以及图案化源极/漏极金属化层和下层n +掺杂层的部分以形成源极和漏极。 TFT材料层的沉积和氢等离子体处理优选通过等离子体增强化学气相沉积。