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公开(公告)号：US06622061B1
公开(公告)日：2003-09-16
申请号：US10160963
申请日：2002-05-31
IPC分类号： G06F1900
CPC分类号： G03F7/70633 , H01L22/20
摘要： The present invention provides for a method and apparatus for correction of overlay control errors. Semiconductor devices are processed based upon control input parameters. The processed semiconductor devices are examined in a review station. The control input parameters are modified in response to the examination of the processed semiconductor devices. New control input parameters are implemented for a subsequent run of the semiconductor device processing step based upon the modification of the control input parameters.
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52.发明授权公开(公告)号：US07299154B1
公开(公告)日：2007-11-20
申请号：US11130459
申请日：2005-05-16
申请人： Qinghua He , Jin Wang , Christopher A. Bode
发明人： Qinghua He , Jin Wang , Christopher A. Bode
IPC分类号： G06F17/18
CPC分类号： G05B5/01 , G05B23/0229 , G05B23/0294
摘要： The present invention provides a method and apparatus for detecting step and impulse disturbances. The method includes determining a pattern based on a plurality of probabilities associated with a corresponding plurality of wafer processing parameters and determining a type of a disturbance based upon the pattern.
摘要翻译： 本发明提供了一种用于检测步进和脉冲扰动的方法和装置。 该方法包括基于与相应的多个晶片处理参数相关联的多个概率来确定模式，并且基于该模式来确定干扰的类型。
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公开(公告)号：US06957120B1
公开(公告)日：2005-10-18
申请号：US10336890
申请日：2003-01-06
IPC分类号： G06F19/00
CPC分类号： G05B23/0221
摘要： A method and an apparatus for implementing enhancing data population based upon manufacturing data. A first and a second workpiece are processed. Metrology data relating to the first workpiece is acquired. The metrology data is extrapolated to generate representative metrology data relating to the second workpiece.
摘要翻译： 一种用于基于制造数据实现增强数据总体的方法和装置。 处理第一和第二工件。 获取与第一工件相关的计量数据。 外推测量数据以产生与第二工件相关的代表性测量数据。
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54.发明授权公开(公告)号：US06912436B1
公开(公告)日：2005-06-28
申请号：US10261156
申请日：2002-09-30
CPC分类号： G05B13/042
摘要： A method and an apparatus for selectively applying correction to a process control. Manufacturing data relating to the processing of a workpiece is acquired. The manufacturing data includes metrology data relating to the processed workpiece. An adjustment for at least a first or a second control input parameter is determined based upon the manufacturing data. The first and second control input parameters are organized to isolate the first control input parameter from the second control input parameter for adjusting at least one of the first and the second control input parameters, using a controller.
摘要翻译： 一种用于选择性地对过程控制应用校正的方法和装置。 获取与工件的处理有关的制造数据。 制造数据包括与加工的工件相关的计量数据。 基于制造数据确定至少第一或第二控制输入参数的调整。 组织第一和第二控制输入参数以将第一控制输入参数与第二控制输入参数隔离，以使用控制器调整第一和第二控制输入参数中的至少一个。
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55.发明授权公开(公告)号：US06897075B2
公开(公告)日：2005-05-24
申请号：US10778411
申请日：2004-02-13
IPC分类号： G03F7/20 , H01L21/027 , G01R21/26
CPC分类号： G03F7/70525
摘要： A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper. The controller is configured to receive a first overlay error measurement associated with the formation of a first layer on a selected wafer and determine at least one parameter in the operating recipe for performing a photolithography process on a second layer formed on the selected wafer based on at least the first overlay error measurement.
摘要翻译： 一种用于控制光刻工艺的方法包括在所选晶片上形成第一层。 测量与第一层相关联的第一重叠错误。 至少基于第一覆盖误差测量来确定用于在形成在第一晶片上的第二层上进行光刻工艺的操作配方中的至少一个参数。 处理线包括光刻步进机，重叠计量工具和控制器。 光刻步进器被配置为根据操作配方处理晶片。 覆盖计量工具被配置为测量与光刻步进机中的晶片的处理相关联的重叠误差。 控制器被配置为接收与所选择的晶片上形成第一层相关联的第一重叠误差测量，并确定操作配方中的至少一个参数，用于在形成于所选择的晶片上的第二层上进行光刻处理 最少重叠错误测量。
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56.发明授权Method and apparatus for determining a sampling plan based on process and equipment state information 有权基于过程和设备状态信息确定采样计划的方法和装置公开(公告)号：US06821792B1
公开(公告)日：2004-11-23
申请号：US10023119
申请日：2001-12-18
IPC分类号： H01L21302
CPC分类号： H01L22/20 , G05B2219/37448 , G05B2219/45031
摘要： A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool. The sampling plan is determined based on the observed tool state variable value.
摘要翻译： 处理线包括处理工具，计量工具，工具状态监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 工具状态监视器被配置为在处理工具中的所选择的工件的处理期间观察至少一个刀具状态变量值。 采样控制器被配置为接收观察到的工具状态变量值，并且基于所观测的工具状态变量值来确定测量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 在处理工具中的特定工件的处理期间观察到至少一个刀具状态变量值。 采样计划是根据观察到的工具状态变量值确定的。
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57.发明授权Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same 失效基于晶片状态特性的动态批量分配以及完成相同的系统公开(公告)号：US06746308B1
公开(公告)日：2004-06-08
申请号：US09903267
申请日：2001-07-11
IPC分类号： B24B4900
CPC分类号： H01L22/20
摘要： In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.
摘要翻译： 在一个说明性实施例中，该方法包括提供多个晶片批次，每个批次包括多个晶片，对多个批次中的每一个中的至少一些晶片执行至少一个处理操作，识别处理后的晶片具有 类似的特征，基于所识别的特征将晶片重新分配到批次，以及对经重新分配的批次具有相似特征的所识别的晶片执行附加的处理操作。 在一个说明性实施例中，该系统包括用于对多个晶片批次中的每一个中的多个晶片中的每一个执行处理操作的第一处理工具，用于识别具有相似特性并且将晶片重新分配给批次的处理晶片的控制器 以及第二处理工具，其适于对所重新分配的批次中具有相似特征的所识别的晶片执行附加处理操作。
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58.发明授权Method and apparatus for determining a sampling plan based on process and equipment fingerprinting 有权基于过程和设备指纹识别取样计划的方法和装置公开(公告)号：US06650955B1
公开(公告)日：2003-11-18
申请号：US10024675
申请日：2001-12-18
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/31459 , G05B2219/31485 , G05B2219/45031 , Y02P90/20 , Y02P90/86
摘要： A processing line includes a processing tool, a metrology tool, a processing monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The processing monitor is configured to monitor the processing of at least one workpiece in the processing tool to generate a fingerprint and determine a processing metric based on the fingerprint. The sampling controller is configured to receive the processing metric and determine the sampling plan for the metrology tool based on the processing metric. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. The processing of at least one workpiece in the processing tool is monitored to generate a fingerprint. A processing metric is determined based on the fingerprint. The sampling plan is determined based on the processing metric.
摘要翻译： 处理线包括处理工具，计量工具，处理监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 处理监视器被配置为监视处理工具中的至少一个工件的处理以生成指纹并且基于指纹来确定处理度量。 采样控制器被配置为基于处理度量来接收处理度量并确定计量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 对处理工具中的至少一个工件进行处理以产生指纹。 基于指纹确定处理度量。 采样计划是根据处理度量确定的。
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59.发明授权Method of using damaged areas of a wafer for process qualifications and experiments, and system for accomplishing same 有权使用晶圆的损坏区域进行工艺鉴定和实验的方法，以及完成相同的系统公开(公告)号：US06605479B1
公开(公告)日：2003-08-12
申请号：US09917327
申请日：2001-07-27
IPC分类号： H01L2166
CPC分类号： H01L22/20
摘要： In one illustrative embodiment, the method comprises providing a wafer, forming a plurality of die above the wafer, identifying a plurality of good die and at least one non-useful die from the plurality of die, and performing a test process on the at least one non-useful die but not on the good die. In another aspect, the present invention is directed to a system that comprises a metrology tool for receiving a wafer having a plurality of die formed thereabove and identifying a plurality of good die and at least one non-useful die from the plurality of die formed above the wafer, and a process tool for performing a test process on the at least one non-useful die on the wafer but not on the plurality of good die.
摘要翻译： 在一个说明性实施例中，该方法包括提供晶片，在晶片上形成多个管芯，从多个管芯识别出多个良好管芯和至少一个非有用管芯，以及至少在至少 一个非有用的模具，但不是在好的死亡。 在另一方面，本发明涉及一种系统，其包括用于接收具有在其上形成的多个模具的晶片的计量工具，并且从上述多个模具中识别多个良好模具和至少一个非有用模具 所述晶片和用于对所述晶片上的所述至少一个非有用裸片执行测试处理而不在所述多个良好裸片上的处理工具。
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公开(公告)号：US06405096B1
公开(公告)日：2002-06-11
申请号：US09371550
申请日：1999-08-10
IPC分类号： G06F1900
CPC分类号： G03F7/70633 , H01L22/20
摘要： The present invention provides for a method and apparatus for correction of overlay control errors. Semiconductor devices are processed based upon control input parameters. The processed semiconductor devices are examined in a review station. The control input parameters are modified in response to the examination of the processed semiconductor devices. New control input parameters are implemented for a subsequent run of the semiconductor device processing step based upon the modification of the control input parameters.
摘要翻译： 本发明提供了一种用于校正重叠控制误差的方法和装置。 基于控制输入参数来处理半导体器件。 处理的半导体器件在检查站中进行检查。 响应于对被处理的半导体器件的检查，修改控制输入参数。 基于控制输入参数的修改，实现新的控制输入参数用于随后的半导体器件处理步骤的运行。
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