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1.发明授权公开(公告)号：US06912436B1
公开(公告)日：2005-06-28
申请号：US10261156
申请日：2002-09-30
CPC分类号： G05B13/042
摘要： A method and an apparatus for selectively applying correction to a process control. Manufacturing data relating to the processing of a workpiece is acquired. The manufacturing data includes metrology data relating to the processed workpiece. An adjustment for at least a first or a second control input parameter is determined based upon the manufacturing data. The first and second control input parameters are organized to isolate the first control input parameter from the second control input parameter for adjusting at least one of the first and the second control input parameters, using a controller.
摘要翻译： 一种用于选择性地对过程控制应用校正的方法和装置。 获取与工件的处理有关的制造数据。 制造数据包括与加工的工件相关的计量数据。 基于制造数据确定至少第一或第二控制输入参数的调整。 组织第一和第二控制输入参数以将第一控制输入参数与第二控制输入参数隔离，以使用控制器调整第一和第二控制输入参数中的至少一个。
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公开(公告)号：US06978189B1
公开(公告)日：2005-12-20
申请号：US10156450
申请日：2002-05-28
CPC分类号： H01L21/67288 , H01L21/67253
摘要： A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.
摘要翻译： 一种用于匹配与综合计量工具相关的数据的方法和装置以及独立计量工具。 至少一个半导体晶片被处理。 基于与由综合计量工具获得的经处理的半导体晶片相关的度量数据与使用控制器由独立计量工具获取的度量数据之间的差异进行匹配的综合计量工具和/或独立计量工具。
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公开(公告)号：US07069103B1
公开(公告)日：2006-06-27
申请号：US10184814
申请日：2002-06-28
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32198 , G05B2219/32201 , G05B2219/45031 , Y02P90/22
摘要： A method and apparatus provided for controlling cumulative wafer effects. The method comprises processing a workpiece, determining a cumulative effect of the processing on the workpiece and comparing the determined cumulative effect to a reference target value. The method further comprises adjusting a downstream process of the workpiece based on comparing the determined cumulative effect to the reference target value.
摘要翻译： 提供用于控制累积晶片效应的方法和装置。 该方法包括处理工件，确定处理对工件的累积效应，并将确定的累积效应与参考目标值进行比较。 该方法还包括基于将确定的累积效应与参考目标值进行比较来调整工件的下游过程。
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公开(公告)号：US06871114B1
公开(公告)日：2005-03-22
申请号：US10231713
申请日：2002-08-30
申请人： Eric O. Green , Matthew A. Purdy , Elfido Coss, Jr. , Christopher A. Bode , Robert J. Chong , Gregory A. Cherry
发明人： Eric O. Green , Matthew A. Purdy , Elfido Coss, Jr. , Christopher A. Bode , Robert J. Chong , Gregory A. Cherry
IPC分类号： G05B19/404 , G06F19/00
CPC分类号： G05B19/404 , G05B2219/37252 , G05B2219/37345 , G05B2219/45031
摘要： A method and an apparatus for adjusting a process controller based upon a fault detection analysis. A process step upon a workpiece is performed using a processing tool. Manufacturing data relating to processing of the workpiece is acquired. The manufacturing data may include metrology data relating to the processed workpiece and/or tool state data relating to the tool state of a processing tool. A metrology/tool state data integration process is performed based upon the acquired manufacturing data. The metrology/tool state data integration process includes performing an assessment of a tool health related to the processing tool and adjusting an emphasis of the metrology data based upon the assessment of the tool health.
摘要翻译： 一种基于故障检测分析调整过程控制器的方法和装置。 使用加工工具进行工件的加工步骤。 获取与工件的加工有关的制造数据。 制造数据可以包括与处理工具有关的计量学数据和/或与加工工具的工具状态有关的刀具状态数据。 基于获取的制造数据执行计量/工具状态数据集成处理。 计量/工具状态数据集成过程包括对与处理工具相关的工具健康进行评估，并且基于对工具健康的评估来调整计量数据的重点。
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5.发明授权Method and system for dynamically adjusting metrology sampling based upon available metrology capacity 失效基于可用计量能力动态调整计量抽样的方法和系统公开(公告)号：US07076321B2
公开(公告)日：2006-07-11
申请号：US10958891
申请日：2004-10-05
申请人： Matthew A. Purdy
发明人： Matthew A. Purdy
CPC分类号： H01L22/20
摘要： The present invention is generally directed to various methods and systems for dynamically adjusting metrology sampling based upon available metrology capacity. In one illustrative embodiment, the method comprises providing a metrology control unit that is adapted to determine a baseline metrology sampling rate for at least one metrology operation, determining available metrology capacity, and providing the determined available metrology capacity to the metrology control unit wherein the metrology control unit determines a new metrology sampling rate based upon the determined available metrology capacity.
摘要翻译： 本发明一般涉及用于基于可用的测量能力来动态地调整计量取样的各种方法和系统。 在一个说明性实施例中，该方法包括提供一个度量控制单元，其适于确定用于至少一个测量操作的基准测量采样率，确定可用的测量能力，以及将所确定的可用测量能力提供给度量控制单元，其中计量学 控制单元基于确定的可用测量能力来确定新的测量采样率。
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公开(公告)号：US06988045B2
公开(公告)日：2006-01-17
申请号：US10634013
申请日：2003-08-04
申请人： Matthew A. Purdy
发明人： Matthew A. Purdy
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L2924/0002 , Y02P90/14 , H01L2924/00
摘要： The present invention is generally directed to various methods and systems for adaptive metrology sampling plans that may be employed to monitor various manufacturing processes. In one example, the method includes creating a plurality of metrology sampling rules, assigning each of the metrology sampling rules a sampling weight value, identifying at least one workpiece that satisfies at least one of the metrology sampling rules, assigning the sampling weight value for each of the satisfied metrology sampling rules with the identified workpieces that satisfy the rules, and indicating a metrology operation should be performed when a cumulative total of the sampling weight values is at least equal to a pre-established trigger value.
摘要翻译： 本发明一般涉及可用于监测各种制造过程的自适应测量采样计划的各种方法和系统。 在一个示例中，该方法包括创建多个计量采样规则，将每个测量采样规则分配给采样权重值，识别满足至少一个计量采样规则的至少一个工件，为每个 满足计量采样规则的识别工件满足规则，并且当采样权重值的累积总和至少等于预先建立的触发值时，应当执行计量操作。
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7.发明授权Method and apparatus for modifying process selectivities based on process state information 有权基于过程状态信息来修改过程选择性的方法和装置公开(公告)号：US07695986B1
公开(公告)日：2010-04-13
申请号：US11194233
申请日：2005-08-01
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01L21/67069
摘要： The present invention provides a method and apparatus for modifying process selectivities based on process state information. The method includes accessing process state information associated with at least one material removal process, determining at least one selectivity based on the process state information, and modifying at least one process parameter of said material removal process based on said at least one determined selectivity.
摘要翻译： 本发明提供一种基于过程状态信息来修改过程选择性的方法和装置。 该方法包括访问与至少一个材料去除过程相关联的过程状态信息，基于过程状态信息确定至少一个选择性，以及基于所述至少一个确定的选择性来修改所述材料去除过程的至少一个过程参数。
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公开(公告)号：US07100081B1
公开(公告)日：2006-08-29
申请号：US10682019
申请日：2003-10-09
CPC分类号： G05B23/0254 , G05B19/41875 , G05B2219/37519 , G05B2219/45031 , Y02P90/22
摘要： A method includes receiving a current residual vector. The current residual vector is compared to a plurality of historical residual vectors. Each historical residual vector has an associated fault classification code. At least one of the historical residual vectors is selected responsive to determining that the current residual vector matches at least one of the historical residual vectors. A fault condition is classified based on the fault classification code associated with the selected historical residual vector.
摘要翻译： 一种方法包括接收当前残差矢量。 将当前残差向量与多个历史残差向量进行比较。 每个历史残差向量都有相关的故障分类码。 响应于确定当前残差向量与至少一个历史残差向量相匹配来选择至少一个历史残差向量。 基于与所选择的历史残差向量相关联的故障分类码，对故障条件进行分类。
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公开(公告)号：US06728591B1
公开(公告)日：2004-04-27
申请号：US09920098
申请日：2001-08-01
IPC分类号： G06F1900
CPC分类号： H01L21/67276 , G05B2219/32179 , G05B2219/45031 , H01L21/67253 , Y02P90/22
摘要： A method and an apparatus are provided for performing run-to-run control of trench profiles. At least one semiconductor wafer is processed. A trench metrology data from the processed semiconductor wafer is acquired. Data relating to at least one process chamber characteristic is acquired while processing the semiconductor wafer. A chamber characteristic adjustment process is performed in response to the trench metrology data and the data relating to the processing chamber characteristic. A feedback adjustment of the processing chamber characteristic is performed in response to the chamber characteristic adjustment process.
摘要翻译： 提供了一种方法和装置，用于对沟槽轮廓执行跑步运行控制。 至少一个半导体晶片被处理。 获得来自处理后的半导体晶片的沟槽测量数据。 在处理半导体晶片时获取与至少一个处理室特性有关的数据。 响应于沟槽测量数据和与处理室特性相关的数据执行室特性调整处理。 响应于腔室特性调整过程执行处理室特性的反馈调整。
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10.发明授权Method and apparatus for detecting processing faults using scatterometry measurements 有权使用散射测量法检测处理故障的方法和装置公开(公告)号：US06639663B1
公开(公告)日：2003-10-28
申请号：US09863562
申请日：2001-05-23
IPC分类号： G01N2100
CPC分类号： G01N21/47 , G01N21/9501 , G01N21/95607
摘要： A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.
摘要翻译： 用于表征未经处理的晶片的方法包括提供具有光栅结构的晶片; 照亮所述光栅结构的至少一部分; 测量从光栅结构反射的光以产生反射曲线; 并且基于反射曲线来表征晶片的错误处理状态。 适于接收具有光栅结构的晶片的计量工具包括光源，检测器和数据处理单元。 光源适于照亮光栅结构的至少一部分。 检测器适于测量从光栅结构反射的光以产生反射曲线。 数据处理单元适于基于反射曲线来表征晶片的错误处理状态。
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