Dual bootstrapping for an open-loop pulse width modulation driver

    公开(公告)号:US11190168B2

    公开(公告)日:2021-11-30

    申请号:US16784392

    申请日:2020-02-07

    Abstract: A driver system may include a first n-type field-effect transistor coupled at its non-gate terminals between an output of the driver system and a first terminal of a supply voltage and configured to drive the output when the first n-type field-effect transistor is activated, a second n-type field-effect transistor coupled at its non-gate terminals between an output of the driver system and a second terminal of the supply voltage and configured to drive the output when the second n-type field-effect transistor is activated, a high-side capacitor coupled to the output of the driver system, and a low-side capacitor coupled to the second terminal of the supply voltage, wherein the high-side capacitor and the low-side capacitor are configured to track and correct for mismatches between a first resistance of the first n-type field-effect transistor and a second resistance of the second n-type field-effect transistor.

    Dual bootstrapping for an open-loop pulse width modulation driver

    公开(公告)号:US11070203B2

    公开(公告)日:2021-07-20

    申请号:US16162960

    申请日:2018-10-17

    Abstract: A driver system may include a first n-type field-effect transistor coupled at its non-gate terminals between an output of the driver system and a first terminal of a supply voltage and configured to drive the output when the first n-type field-effect transistor is activated, a second n-type field-effect transistor coupled at its non-gate terminals between an output of the driver system and a second terminal of the supply voltage and configured to drive the output when the second n-type field-effect transistor is activated, a high-side capacitor coupled to the output of the driver system, and a low-side capacitor coupled to the second terminal of the supply voltage, wherein the high-side capacitor and the low-side capacitor are configured to track and correct for mismatches between a first resistance of the first n-type field-effect transistor and a second resistance of the second n-type field-effect transistor.

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