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    Digital technique for precise measurement of variable capacitance
    51.
    发明授权
    Digital technique for precise measurement of variable capacitance 失效
    用于精确测量可变电容的数字技术

    公开(公告)号：US4860232A

    公开(公告)日：1989-08-22

    申请号：US41773

    申请日：1987-04-22

    Applicant: Hae-Seung Lee ,  Roger T. Howe ,  Joseph T. Kung

    Inventor： Hae-Seung Lee ,  Roger T. Howe ,  Joseph T. Kung

    IPC: G01D5/241 ,  G01L9/12 ,  G01R17/06 ,  G01R27/26

    CPC classification number: G01D5/2415 ,  G01L9/125 ,  G01R17/06 ,  G01R27/2605

    Abstract: The present invention comprises a circuit for measuring the capacitive differences of small capacitors. The circuit comprises a reference capacitor and a sensor capacitor. Connected to one of the plates of each capacitor is a switch which connects the capacitors to one of two reference voltages. The other plate of the capacitors are connected to an input terminal of a voltage comparator. The comparator compares the input voltage with a third reference voltage. Differences in voltages detected by the comparator are applied to a feedback loop for generating an offset voltage at the input terminal. The offset voltage applied at the input terminal is proportional to the capacitive difference between the reference capacitor and the sensor capacitor. The feedback loop comprises a successive approximation register for digitizing the offset voltages and a digital to analog converter for converting the digitized voltages into analog voltages which are applied at the input terminal. Digitized offset voltages can be measured at the output of the successive approximation register.

    Abstract translation: 本发明包括用于测量小电容器的电容差的电路。 该电路包括参考电容器和传感器电容器。 连接到每个电容器的一个板的是将电容器连接到两个参考电压之一的开关。 电容器的另一个电极连接到电压比较器的输入端。 比较器将输入电压与第三参考电压进行比较。 由比较器检测的电压的差异被施加到用于在输入端产生偏移电压的反馈回路。 施加在输入端子的偏移电压与参考电容器和传感器电容器之间的电容差成正比。 反馈回路包括用于数字化偏移电压的逐次逼近寄存器和用于将数字化电压转换成在输入端施加的模拟电压的数模转换器。 可以在逐次逼近寄存器的输出端测量数字化偏移电压。

    Temperature compensated oscillator including MEMS resonator for frequency control
    52.
    发明授权
    Temperature compensated oscillator including MEMS resonator for frequency control 有权
    温度补偿振荡器包括用于频率控制的MEMS谐振器

    公开(公告)号：US08427251B2

    公开(公告)日：2013-04-23

    申请号：US11691330

    申请日：2007-03-26

    Applicant: Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H03B5/30

    CPC classification number: G01K7/32 ,  G04G3/04 ,  H03H9/02448 ,  H03H9/2473 ,  H03H2009/02496

    Abstract: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.

    Abstract translation: 公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。 与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。

    Temperature compensated oscillator including MEMS resonator for frequency control
    53.
    发明申请
    Temperature compensated oscillator including MEMS resonator for frequency control 有权
    温度补偿振荡器包括用于频率控制的MEMS谐振器

    公开(公告)号：US20120229220A1

    公开(公告)日：2012-09-13

    申请号：US11691330

    申请日：2007-03-26

    Applicant: Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H03B21/01 ,  G01K11/26

    CPC classification number: G01K7/32 ,  G04G3/04 ,  H03H9/02448 ,  H03H9/2473 ,  H03H2009/02496

    Abstract: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.

    Abstract translation: 公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。 与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。

    DAMASCENE PROCESS FOR USE IN FABRICATING SEMICONDUCTOR STRUCTURES HAVING MICRO/NANO GAPS
    54.
    发明申请
    DAMASCENE PROCESS FOR USE IN FABRICATING SEMICONDUCTOR STRUCTURES HAVING MICRO/NANO GAPS 有权
    用于制造具有微米/纳米GAPS的半导体结构的大分子方法

    公开(公告)号：US20120171798A1

    公开(公告)日：2012-07-05

    申请号：US11737545

    申请日：2007-04-19

    Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

    Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

    IPC: H01L21/02

    CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

    Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

    Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

    Planar microshells for vacuum encapsulated devices and damascene method of manufacture
    56.
    发明授权
    Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
    用于真空封装装置的平面微壳和大马士革制造方法

    公开(公告)号：US07923790B1

    公开(公告)日：2011-04-12

    申请号：US11716070

    申请日：2007-03-09

    Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    IPC: H01L29/84

    CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

    Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

    MEMS coupler and method to form the same
    57.
    发明授权
    MEMS coupler and method to form the same 有权
    MEMS耦合器和方法形成相同

    公开(公告)号：US07858422B1

    公开(公告)日：2010-12-28

    申请号：US11716227

    申请日：2007-03-09

    Applicant: Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H01L21/00

    CPC classification number: B81C1/00039 ,  B81B2201/0271

    Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

    Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

    MEMS structure having a compensated resonating member
    58.
    发明授权
    MEMS structure having a compensated resonating member 有权
    具有补偿谐振元件的MEMS结构

    公开(公告)号：US07591201B1

    公开(公告)日：2009-09-22

    申请号：US11716285

    申请日：2007-03-09

    Applicant: David H. Bernstein ,  Roger T. Howe ,  Emmanuel P. Quevy

    Inventor： David H. Bernstein ,  Roger T. Howe ,  Emmanuel P. Quevy

    IPC: F16H33/14

    CPC classification number: H03H9/2457 ,  H03H3/0076 ,  H03H2009/02496 ,  Y10T74/11 ,  Y10T74/113

    Abstract: A MEMS structure having a compensated resonating member is described. In an embodiment, a MEMS structure comprises a resonating member coupled to a substrate by an anchor. A dynamic mass-load is coupled with the resonating member. The dynamic mass-load is provided for compensating a change in frequency of the resonating member by altering the moment of inertia of the resonating member by way of a positional change relative to the anchor.

    Abstract translation: 描述了具有补偿谐振元件的MEMS结构。 在一个实施例中，MEMS结构包括通过锚固件耦合到衬底的谐振构件。 动态质量负载与谐振构件耦合。 提供动态质量负载，用于通过相对于锚的位置变化改变谐振构件的惯性矩来补偿谐振构件的频率变化。

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