公开(公告)号：US07999360B2

公开(公告)日：2011-08-16

申请号：US12589466

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L23/552

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是在oc-TaN层上的NiCr，NiFe或NiFeCr层的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

公开(公告)号：US20100047929A1

公开(公告)日：2010-02-25

申请号：US12589465

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/8246

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

公开(公告)号：US07611912B2

公开(公告)日：2009-11-03

申请号：US10881445

申请日：2004-06-30

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/8246

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。

公开(公告)号：US20070120210A1

公开(公告)日：2007-05-31

申请号：US11290763

申请日：2005-11-30

申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.

摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

公开(公告)号：US20070054450A1

公开(公告)日：2007-03-08

申请号：US11221146

申请日：2005-09-07

申请人： Liubo Hong ,  Mao-Min Chen ,  Tai Min ,  Jun Chen

发明人： Liubo Hong ,  Mao-Min Chen ,  Tai Min ,  Jun Chen

IPC分类号： H01L21/336

CPC分类号： H01L43/12

摘要： MTJ stacks formed using prior art processes often fail because of shorts between the pinned layer and the top electrode. This problem has been overcome by depositing a protective layer on the MTJ sidewalls followed by an inter-layer dielectric. Then planarizing until the protective layer is just exposed. Finally, an etching (or second CMP) process is used to selectively remove the protective layer from the top surface of the cap layer.

摘要翻译： 使用现有技术方法形成的MTJ堆叠通常由于被钉扎层和顶部电极之间的短路而失败。 通过在MTJ侧壁上沉积保护层，接着是层间电介质来克服这个问题。 然后平面化直到保护层刚刚暴露。 最后，使用蚀刻（或第二CMP）工艺来从盖层的顶表面选择性地去除保护层。

公开(公告)号：US07122852B2

公开(公告)日：2006-10-17

申请号：US10844171

申请日：2004-05-12

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC分类号： H01L31/113 ,  H01L29/76 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

摘要翻译： 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta层具有光滑的表面，并且光滑的表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层），其中 具有超薄，光滑，且具有较高的击穿电压。 在Ta的溅射蚀刻层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

公开(公告)号：US20060022227A1

公开(公告)日：2006-02-02

申请号：US11236049

申请日：2005-09-26

申请人： Cheng Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

发明人： Cheng Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

IPC分类号： H01L29/80

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the LAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.

摘要翻译： 特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑 ，并具有高的击穿电压。 种子层是形成在Ta的溅射蚀刻层上的NiCr层。 用于LAM的隧道势垒层由Al原位氧化的薄层（ROX）形成，以形成具有上述特征的层。 用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。 所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

公开(公告)号：US20050127416A1

公开(公告)日：2005-06-16

申请号：US10732013

申请日：2003-12-10

申请人： Cherng-Chyi Han ,  Liubo Hong

发明人： Cherng-Chyi Han ,  Liubo Hong

IPC分类号： H01F10/32 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.

公开(公告)号：US06673724B2

公开(公告)日：2004-01-06

申请号：US10037018

申请日：2001-11-07

申请人： John Forster ,  Praburam Gopalraja ,  Bradley O. Stimson ,  Liubo Hong

发明人： John Forster ,  Praburam Gopalraja ,  Bradley O. Stimson ,  Liubo Hong

IPC分类号： H01L2131

CPC分类号： C23C14/345 ,  C23C14/046 ,  H01J37/32082 ,  H01J37/32431 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76877

摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.

摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。 在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。 优选地，到衬底的调制信号包括负电压部分和零电压部分。

公开(公告)号：US08673654B2

公开(公告)日：2014-03-18

申请号：US12589465

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。