公开(公告)号：US09722176B2

公开(公告)日：2017-08-01

申请号：US14991660

申请日：2016-01-08

Applicant: Everspin Technologies, Inc.

Inventor： Chaitanya Mudivarthi ,  Sarin A. Deshpande ,  Sanjeev Aggarwal

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11B5/31 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11B5/3163 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  Y10T29/49021

Abstract: Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.

公开(公告)号：US09711566B1

公开(公告)日：2017-07-18

申请号：US15230402

申请日：2016-08-06

Applicant: Everspin Technologies, Inc.

Inventor： Thomas Andre ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel ,  Sarin A. Deshpande

IPC: H01L29/82 ,  H01L43/00 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

公开(公告)号：US09698341B2

公开(公告)日：2017-07-04

申请号：US15081397

申请日：2016-03-25

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal

IPC: H01L43/12 ,  H01L43/08 ,  G11B5/84 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11B5/84 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using a plurality of masks. The magnetoresistive-based device includes magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer. In one embodiment, the method may include removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first mask, to form a first electrode and a first magnetic materials, respectively, and removing the tunnel barrier layer and the second magnetic materials layer unprotected by a second mask to form a tunnel barrier and second magnetic materials, and the second electrically conductive layer unprotected by the second mask to form, and a second electrode.

公开(公告)号：US09343661B2

公开(公告)日：2016-05-17

申请号：US14296189

申请日：2014-06-04

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Chaitanya Mudivarthi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.

Abstract translation: 在形成用于磁阻器件的顶部电极时，使用非反应性剥离工艺剥离用于图案化电极的光致抗蚀剂。 这种非反应性汽提方法使用水蒸汽或一些其它非氧化气体，其也钝化了磁阻装置的暴露部分。 在这种磁阻器件中，包括非反应性间隔层，其有助于防止磁阻器件中的层之间的扩散，其中间隔层的非反应性质防止可能干扰磁阻的下部的精确形成的侧壁粗糙度 设备。

公开(公告)号：US20160126454A1

公开(公告)日：2016-05-05

申请号：US14991660

申请日：2016-01-08

Applicant: Everspin Technologies, Inc.

Inventor： Chaitanya Mudivarthi ,  Sarin A. Deshpande ,  Sanjeev Aggarwal

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11B5/3163 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  Y10T29/49021

Abstract: Methods for manufacturing magnetoresistive devices are presented in which isolation of magnetic layers in the magnetoresistive stack is achieved by oxidizing exposed sidewalls of the magnetic layers prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.

Abstract translation: 介绍制造磁阻器件的方法，其中通过在随后的蚀刻步骤之前氧化暴露的磁性层的侧壁来实现磁阻堆叠中的磁层的隔离。 使用非反应性气体蚀刻磁性层进一步防止侧壁的劣化。

公开(公告)号：US09166155B2

公开(公告)日：2015-10-20

申请号：US14264520

申请日：2014-04-29

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal

IPC: B44C1/22 ,  H01L43/12 ,  G11B5/84

CPC classification number: H01L43/12 ,  G11B5/84 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.

Abstract translation: 一种制造具有在第一导电层和第二导电层之间形成的磁性材料层的基于磁阻的器件的方法，所述磁性材料层包括在第一磁性材料层和第二磁性材料层之间形成的隧道势垒层， 包括去除未被第一硬掩模保护的第一导电层和第一磁性材料层，分别形成第一电极和第一磁性材料; 以及去除不受第二硬掩模保护的隧道势垒层，第二磁性材料层和第二导电层，以形成隧道势垒，第二磁性材料和第二电极。