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62 条记录 (耗时 0.03 秒)

    Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current
    51.
    发明授权
    Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current 有权
    具有存储层磁化的磁存储元件，用于增加对自旋极化电流的响应

    公开(公告)号：US07859069B2

    公开(公告)日：2010-12-28

    申请号：US11724740

    申请日：2007-03-16

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    IPC分类号： G11C11/15

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

    DISCRETE TRACK MEDIA
    52.
    发明申请
    DISCRETE TRACK MEDIA 有权
    分离轨道介质

    公开(公告)号：US20100021767A1

    公开(公告)日：2010-01-28

    申请号：US12178443

    申请日：2008-07-23

    申请人： Nurul Amin ,  Sining Mao

    发明人： Nurul Amin ,  Sining Mao

    IPC分类号： G11B5/66 ,  B05D5/12 ,  B26D3/00

    CPC分类号： G11B5/84 ,  B26D3/16 ,  B82Y10/00 ,  G11B5/64 ,  G11B5/66 ,  G11B5/743 ,  G11B5/82 ,  G11B5/851 ,  G11B5/865 ,  Y10T83/04

    摘要： A method of fabricating a discrete track magnetic recording media. A base layer is provided onto which repeating and alternating magnetic layer and non-magnetic layers are deposited. The thickness of the magnetic layer corresponds to the width of the track of the recording media. A cylindrical rod can be used as the base layer, such that the alternating magnetic and non-magnetic layers spiraling or concentric layers around the rod. The resulting media layer can be cut or sliced into individual magnetic media or used to imprint other media discs with the discrete pattern of the media layer.

    摘要翻译： 一种制造离散轨道磁记录介质的方法。 提供基层，沉积重复和交替的磁性层和非磁性层。 磁性层的厚度对应于记录介质的轨道的宽度。 可以使用圆柱形棒作为基层，使得交替的磁性和非磁性层围绕杆螺旋或同心层。 所得到的介质层可以被切割或切成单独的磁性介质，或用于用介质层的离散图案印刷其它介质盘。

    Differential CPP reader for perpendicular magnetic recording
    55.
    发明授权
    Differential CPP reader for perpendicular magnetic recording 有权
    用于垂直磁记录的差分CPP读码器

    公开(公告)号：US07016160B2

    公开(公告)日：2006-03-21

    申请号：US10715695

    申请日：2003-11-18

    申请人： Sining Mao ,  Eric S. Linville ,  Nurul Amin ,  Johannes Van Ek ,  Olle G. Heinonen

    发明人： Sining Mao ,  Eric S. Linville ,  Nurul Amin ,  Johannes Van Ek ,  Olle G. Heinonen

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3948 ,  G11B2005/0008 ,  G11B2005/0029 ,  G11B2005/3996

    摘要： A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

    摘要翻译： 差分读取头包括在垂直于平面（CPP）模式的电流中操作的一个三层读取器或多个三层读取器。 三层读取器各自包括位于其间的第一自由层，第二自由层和非磁性层。 非磁性间隔件位于多个三层读取器之间，用于串联电连接多个三层读取器，使得表示差分信号的单个CPP感测电流串行地流过读取头。 使用单个三层读取器，自由层间隔开与磁介质的过渡宽度基本相似的宽度。

    Tunneling barrier material for a magnetic recording head
    56.
    发明授权
    Tunneling barrier material for a magnetic recording head 有权
    用于磁记录头的隧道阻隔材料

    公开(公告)号：US06791806B1

    公开(公告)日：2004-09-14

    申请号：US10216515

    申请日：2002-08-09

    申请人： Zheng Gao ,  Sining Mao ,  Khoung Tran ,  Janusz Nowak ,  Jian Chen

    发明人： Zheng Gao ,  Sining Mao ,  Khoung Tran ,  Janusz Nowak ,  Jian Chen

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272

    摘要： A tunneling magnetoresistive stack configured to operate in a current-perpendicular-to-plane mode has a plurality of layers including a barrier layer. The TMR stack has a plurality of layers including a barrier layer, wherein the barrier layer is comprised of an insulating material selected from a group consisting of HfO, HfAlO, ZrO, TiO, TaO or NdO. The TMR stack exhibits a low resistance-area (RA) product, a stable magnetoresistive (MR) ratio, a lower RA product, a higher breakdown voltage of the TMR stack and enhanced thermal stability.

    摘要翻译： 构造成在电流垂直于平面模式下工作的隧道磁阻堆叠具有包括阻挡层的多个层。 TMR叠层具有包括阻挡层的多个层，其中阻挡层由选自HfO，HfAlO，ZrO，TiO，TaO或NdO的绝缘材料构成。 TMR堆叠表现出低电阻面积（RA）产品，稳定的磁阻（MR）比，较低的RA乘积，TMR堆叠的较高击穿电压和增强的热稳定性。

    Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
    57.
    发明授权
    Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments 失效
    结构实现热稳定的高灵敏度和线性范围的桥梁GMR传感器使用SAF磁性对准

    公开(公告)号：US06771472B1

    公开(公告)日：2004-08-03

    申请号：US10314458

    申请日：2002-12-06

    申请人： Sining Mao ,  Songsheng Xue ,  William Vavra ,  William Jude O'Kane ,  James Keith Price ,  Patrick Joseph Ryan

    发明人： Sining Mao ,  Songsheng Xue ,  William Vavra ,  William Jude O'Kane ,  James Keith Price ,  Patrick Joseph Ryan

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3906

    摘要： The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

    摘要翻译： 本发明提供一种磁传感器，其具有配置在惠斯通电桥中的第一相对对和第二相对对的电阻元件，其中电阻元件是具有参考层和不同厚度的钉扎层的合成反铁磁巨磁阻传感器，其中， 第一相对对具有与第二相对对相反的净磁矩，并且其中第一相对对具有比被钉扎层更厚的参考层，并且第二相对对具有比参考层更厚的钉扎层。 本发明的其它实施例具有相反的双层和三层合成反铁磁巨磁阻传感器或相反的合成和标准反铁磁巨磁阻传感器的电阻元件。

    Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer
    59.
    发明授权
    Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer 有权
    具有PtMnX钉扎层和NiFeCr种子层的巨磁阻传感器

    公开(公告)号：US06490140B1

    公开(公告)日：2002-12-03

    申请号：US09528346

    申请日：2000-03-17

    申请人： Sining Mao ,  Zheng Gao ,  Eric W. Singleton

    发明人： Sining Mao ,  Zheng Gao ,  Eric W. Singleton

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295

    摘要： A giant magnetoresistive stack for use in a magnetic read head includes a NiFeCr seed layer, a ferromagnetic free layer, at least one nonmagnetic spacer layer, at least one ferromagnetic pinned layer, and at least one PtMnX pinning layer, where X is selected from the group consisting of Cr, Pd, Nb, Re, Rh, Ta, Ru, Os, Zr, Hf, Ni, Co, and Fe. The ferromagnetic free layer has a rotatable magnetic moment. The ferromagnetic pinned layer has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer. The nonmagnetic spacer layer is positioned between the free layer and the pinned layer. The NiFeCr seed layer is positioned adjacent to either the free layer or the pinning layer.

    摘要翻译： 用于磁读头的巨磁阻堆包括NiFeCr种子层，铁磁自由层，至少一个非磁性间隔层，至少一个铁磁性钉扎层和至少一个PtMnX钉扎层，其中X选自 由Cr，Pd，Nb，Re，Rh，Ta，Ru，Os，Zr，Hf，Ni，Co和Fe组成的组。 铁磁自由层具有可旋转的磁矩。 铁磁钉扎层具有固定的磁矩并且位于PtMnX钉扎层附近。 非磁性间隔层位于自由层和钉扎层之间。 NiFeCr种子层位于自由层或钉扎层附近。