公开(公告)号：US5401605A

公开(公告)日：1995-03-28

申请号：US282772

申请日：1994-07-29

申请人： Kousuke Doi ,  Hiroshi Hosoda ,  Kouichi Takahashi ,  Nobuo Tokutake ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Kousuke Doi ,  Hiroshi Hosoda ,  Kouichi Takahashi ,  Nobuo Tokutake ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7/022 ,  G03F7/023

CPC分类号： G03F7/022

摘要： Proposed is a positive-working photosensitive resin composition suitable as a photoresist in the photolithographic patterning work for the manufacture of, for example, semiconductor devices having excellent storage stability and capable of giving a patterned resist layer having excellent contrast of the images, orthogonality of the cross sectional profile of line patterns and heat resistance along with a satisfactorily high photosensitivity and large focusing latitude. The composition comprises, in admixture with an alkali-soluble novolac resin as a film-forming agent, a photosensitizing agent which is an esterification product of a specific tris(hydroxyphenyl) methane compound of which two of the hydroxyphenyl groups each have a cyclohexyl group bonded thereto at a specified position with at least one naphthoquinone-1,2-diazide sulfonyl group as the esterifying group.

摘要翻译： 提出了在光刻图案工作中适合作为光致抗蚀剂的正性感光性树脂组合物，用于制造例如具有优异的储存稳定性的半导体器件，并且能够给出具有优异的图像对比度的图案化抗蚀剂层， 线图形的横截面轮廓和耐热性以及令人满意的高光敏性和大的聚焦纬度。 该组合物与作为成膜剂的碱溶性酚醛清漆树脂的混合物包含作为其中两个羟基苯基各自具有环己基基团的特定三（羟基苯基）甲烷化合物的酯化产物的光敏剂 在指定位置与至少一个萘醌-1,2-二叠氮基磺酰基作为酯化基。

公开(公告)号：US5180653A

公开(公告)日：1993-01-19

申请号：US693664

申请日：1991-04-30

申请人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： C08K5/3492 ,  C08L61/06

CPC分类号： C08K5/3492 ,  C08L61/06 ,  Y10S430/143

摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

摘要翻译： 提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层， 线图案的正交横截面轮廓。 组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。 通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

公开(公告)号：US5057397A

公开(公告)日：1991-10-15

申请号：US438334

申请日：1989-11-16

申请人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7/038 ,  C08F2/46 ,  C08K5/3492 ,  C08L61/06 ,  C08L61/08 ,  G03F7/004 ,  H01L21/027

CPC分类号： C08K5/3492 ,  C08L61/06 ,  Y10S430/121 ,  Y10S430/128 ,  Y10S430/143

摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

摘要翻译： 提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层， 线图案的正交横截面轮廓。 组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。 通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

公开(公告)号：US4740451A

公开(公告)日：1988-04-26

申请号：US56257

申请日：1987-05-26

申请人： Hidekatsu Kohara

发明人： Hidekatsu Kohara

IPC分类号： C08L61/00 ,  C08L61/04 ,  G03F7/012 ,  G03F7/26

CPC分类号： G03F7/0125

摘要： The invention provides a novel and improved photosensitive or photocurable composition useful as a photoresist material in the manufacturing process of semiconductor devices such as LSIs by the lithographic process involving etching, in particular, with low temperature plasma in a dry process. The photoresist layer formed of the inventive composition is highly resistant against damages even by direct contacting with a photomask used in the pattern-wise exposure of the photoresist to light owing to the improved pliability thereof and good adhesion to the substrate surface in addition to the stability against the attack by the plasma. The composition comprises (a) a phenolic polymer, e.g. a novolac resin or a polymer of a hydroxystyrene, (b) an aromatic azide compound and (c) a polymer of a vinyl alkyl ether, the amounts of the compounds (b) and (c) being limited relative to the amount of the component (a). Best results of the pattern reproduction can be obtained only when the developer liquid following the patternwise irradiation of the photoresist layer is a specific solvent mixture which is a mixture of isoamyl acetate and methyl isobutyl ketone, isopropyl alcohol and xylene, or isoamyl acetate and ethyleneglycol monomethyl ether acetate in a specified weight proportion.

摘要翻译： 本发明提供了一种新颖和改进的光敏剂或可光固化组合物，其在半导体器件如LSI的制造过程中可用作光致抗蚀剂材料，通过涉及蚀刻的光刻工艺，特别是在干法中具有低温等离子体。 由本发明组合物形成的光致抗蚀剂层由于改善的柔韧性和与基材表面的良好粘合性以及稳定性而与光致抗蚀剂的图案形式曝光中使用的光掩模直接接触，因而具有高度的抗损性 反对等离子体的攻击。 组合物包含（a）酚类聚合物，例如 酚醛清漆树脂或羟基苯乙烯的聚合物，（b）芳族叠氮化合物和（c）乙烯基烷基醚的聚合物，化合物（b）和（c）的量相对于组分 （一个）。 只有当光致抗蚀剂层的图案照射之后的显影液是作为乙酸异戊酯和甲基异丁基酮，异丙醇和二甲苯或乙酸异戊酯单甲基酯的混合物的特定溶剂混合物时，才能获得图案再现的最佳结果 乙醚乙酸酯按规定重量比例。

公开(公告)号：US06517993B2

公开(公告)日：2003-02-11

申请号：US09901646

申请日：2001-07-11

申请人： Tsuyoshi Nakamura ,  Taeko Ikegawa ,  Atsushi Sawano ,  Kousuke Doi ,  Hidekatsu Kohara

发明人： Tsuyoshi Nakamura ,  Taeko Ikegawa ,  Atsushi Sawano ,  Kousuke Doi ,  Hidekatsu Kohara

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0382 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/111

摘要： A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.

摘要翻译： 新型共聚物包括由例如下式（I）表示的重复单元（A）和由不饱和羧酸酐衍生的重复单元（B）。 新型共聚物适用于具有令人满意的透明度，高灵敏度和清晰度的光致抗蚀剂组合物的制备，并且在使用深UV光源的光刻领域中表现出令人满意的DOF特性。 通过使用光致抗蚀剂组合物，工艺形成具有高纵横比的抗蚀剂图案。

公开(公告)号：US06884566B2

公开(公告)日：2005-04-26

申请号：US10685432

申请日：2003-10-16

申请人： Tsuyoshi Nakamura ,  Taeko Ikegawa ,  Atsushi Sawano ,  Kousuke Doi ,  Hidekatsu Kohara

发明人： Tsuyoshi Nakamura ,  Taeko Ikegawa ,  Atsushi Sawano ,  Kousuke Doi ,  Hidekatsu Kohara

IPC分类号： C08F220/18 ,  C08F222/06 ,  C08F230/08 ,  C08K5/41 ,  C08L35/00 ,  G03F7/039 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038

CPC分类号： C08F222/06 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/106 ,  Y10S430/111

摘要： A novel copolymer includes a repeating unit (B) derived from an unsaturated carboxylic anhydride, a repeating unit (C) represented by Formula (II), and a repeating unit (D) represented by Formula (III).

摘要翻译： 新型共聚物包括来自不饱和羧酸酐的重复单元（B），由式（II）表示的重复单元（C）和由式（III）表示的重复单元（D）。