Automated sensitivity definition and calibration for design for manufacturing tools
    51.
    发明授权
    Automated sensitivity definition and calibration for design for manufacturing tools 有权
    自动灵敏度定义和校准用于制造工具的设计

    公开(公告)号:US08141027B2

    公开(公告)日:2012-03-20

    申请号:US12652409

    申请日:2010-01-05

    IPC分类号: G06F17/50

    摘要: A method of automatic calibration of a design for manufacturing (DfM) simulation tool includes providing, as a first input, one or more defined rules for each of one or more semiconductor device levels to be simulated by the tool, and providing, as a second input, a plurality of defined feature size threshold ranges and increments for use in histogram generation of a number of failures with respect to a reference circuit; providing, as a third input, the reference circuit; executing the defined rules for the semiconductor device levels to be simulated, and outputting a fail count for the reference circuit at each defined threshold value, thereby generating histogram data of fail count versus threshold for the reference circuit; and providing, as a fourth input, a defined fail count metric, thereby calibrating the DfM tool for use with respect to a target circuit.

    摘要翻译: 一种用于制造设计(DfM)模拟工具的自动校准的方法包括为由工具模拟的一个或多个半导体器件级别中的每一个提供一个或多个限定规则作为第一输入,并且作为第二输入提供第二 输入,多个定义的特征尺寸阈值范围和增量,用于相对于参考电路的多个故障的直方图生成; 提供参考电路作为第三输入; 执行要被模拟的半导体器件电平的限定规则,并在每个定义的阈值处输出参考电路的故障计数,由此产生参考电路的故障计数与阈值的直方图数据; 并且作为第四输入提供定义的故障计数度量,从而校准用于目标电路的DfM工具。

    Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool
    52.
    发明授权
    Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool 有权
    使用关键区域分析工具计算VLSI设计对随机和系统缺陷的敏感度的方法

    公开(公告)号:US08132129B2

    公开(公告)日:2012-03-06

    申请号:US12348070

    申请日:2009-01-02

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.

    摘要翻译: 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来,该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地,对于短路导致的缺陷,当结构包括较高的系统缺陷灵敏度水平时,该方法预先扩展结构,并且当结构包括较低的系统缺陷灵敏度水平时预结构。 接下来,使用改进的结构对集成电路布局进行关键区域分析,其中使用点投掷,几何展开或Voronoi图。 然后,该方法计算故障密度值,计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较,其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。

    IMAGE SENSOR PIXEL STRUCTURE EMPLOYING A SHARED FLOATING DIFFUSION
    54.
    发明申请
    IMAGE SENSOR PIXEL STRUCTURE EMPLOYING A SHARED FLOATING DIFFUSION 有权
    图像传感器像素结构采用共享浮动扩展

    公开(公告)号:US20110025892A1

    公开(公告)日:2011-02-03

    申请号:US12534427

    申请日:2009-08-03

    摘要: A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.

    摘要翻译: 图像传感器的像素结构包括具有共面且相邻的半导体表面的半导体材料部分,包括四个光电二极管,四个沟道区域和公共的浮动扩散区域。 四个通道区域中的每一个直接邻接四个光电二极管和公共浮动扩散区域中的一个。 四个光电二极管位于四个不同的象限内,如使用通过公共浮动扩散区域内的点作为中心轴的垂直线所限定的。 公共浮动扩散区域,复位栅极晶体管,源极跟随器晶体管和行选择晶体管位于四个不同的象限内,如使用通过一个光电二极管内的点作为轴的垂直线所限定的。

    Method and system for analyzing an integrated circuit based on sample windows selected using an open deterministic sequencing technique
    55.
    发明授权
    Method and system for analyzing an integrated circuit based on sample windows selected using an open deterministic sequencing technique 有权
    基于使用开放确定性测序技术选择的样本窗口来分析集成电路的方法和系统

    公开(公告)号:US07752580B2

    公开(公告)日:2010-07-06

    申请号:US11828728

    申请日:2007-07-26

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: Disclosed herein are embodiments of a system and an associated method for analyzing an integrated circuit to determine the value of a particular attribute (i.e., a physical or electrical property) in that integrated circuit. In the embodiments, an open deterministic sequencing technique is used to select a sequence of points representing centers of sample windows in an integrated circuit layout. Then, the value of the particular attribute is determined for each sample window and the results are accumulated in order to infer an overall value for that particular attribute for the entire integrated circuit layout. This sequencing technique has the advantage of allowing additional sample windows to be added and/or the sizes and shapes of the windows to be varied without hindering the quality of the sample.

    摘要翻译: 这里公开的是用于分析集成电路以确定该集成电路中的特定属性(即,物理或电气特性)的值的系统和相关方法的实施例。 在实施例中,使用开放确定性测序技术来选择表示集成电路布局中的样本窗口中心的点序列。 然后,为每个采样窗口确定特定属性的值,并累积结果,以推断整个集成电路布局的该特定属性的总体值。 这种测序技术具有允许添加附加样品窗口和/或改变窗口的尺寸和形状而不妨碍样品质量的优点。

    METHOD FOR COMPUTING THE SENSISTIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL
    57.
    发明申请
    METHOD FOR COMPUTING THE SENSISTIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL 有权
    使用关键领域分析工具计算VLSI设计对两个随机和系统缺陷的敏感度的方法

    公开(公告)号:US20090113360A1

    公开(公告)日:2009-04-30

    申请号:US12348070

    申请日:2009-01-02

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.

    摘要翻译: 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来,该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地,对于短路导致的缺陷,当结构包括较高的系统缺陷灵敏度水平时,该方法预扩展结构,并且当结构包括较低的系统缺陷灵敏度水平时,预结构化。 接下来,使用改进的结构对集成电路布局进行关键区域分析,其中使用点投掷,几何展开或Voronoi图。 然后,该方法计算故障密度值,计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较,其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。

    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    60.
    发明授权
    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US08234594B2

    公开(公告)日:2012-07-31

    申请号:US11552225

    申请日:2006-10-24

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和位于距离第二线的第一距离的第四线 在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔大致轴向对准第一通孔。 第三通过在第四线的第二位置连接第三和第四导线。 在第二位置连接第一和第四导线的第四通孔,第四通孔与第三通孔大致轴向对齐。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。